Abstract
The passivation properties of the local oxidation of silicon (LOCOS) oxide/Si interface defects were investigated by reverse current measurement and capacitance transient spectroscopy of pn junction diodes that had a large LOCOS-defined perimeter. The LOCOS/Si interface defects had some properties similar to those of the SiO2/Si(100) interface states of metal–oxide–silicon (MOS) diodes. However, there was a significant difference between the two interfaces in the rate of unpassivated defects remaining after H2 annealing: this rate was higher for the LOCOS/Si interface than for the MOS interface.
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