Abstract
In this letter, the electrical properties of local oxidation of silicon (LOCOS) field oxide formed on 4H-SiC are reported. Moreover, unlike the conventional Si LOCOS process, a simpler method based on Ar preamorphization implantation is proposed. In addition to direct characterization of the field oxide, device properties achieved using LOCOS isolation are compared with those achieved using the conventional chemical vapor deposition oxide isolation to clarify the impact of isolation technology. The results of this letter would be insightful for silicon-carbide-based very-large-scale integration technology.
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