Abstract
The morphological characterization of local oxidation of silicon (LOCOS) isolation has been carried out by using steam oxidation in the temperature range 1050 to 1180°C and as‐grown field oxide thickness between 150 and 600 nm. A bird's beak minimum is observed between 100 and 1140°C, corresponding to a change in the bird's beak growth mechanism from a diffusion type to a regime dependent on silicon surface oxidation and nitride oxidation rates. For the first time on LOCOS isolation, the improvement of field oxide thinning by reducing field oxide thickness is reported: that enables a possible scaling for subquarter micrometer design rules.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
