Comparison of electrical parameters of Zn/p-Si and Sn/p-Si Schottky barrier diodes

Abstract

In this study, current–voltage ( I– V) and capacitance–voltage ( C– V) characteristics of metal–semiconductor (MS) Zn/p-Si and Sn/p-Si Schottky diodes, with high resistivity silicon structures, are investigated. The parameters of series resistance ( R S), the ideality factor ( n) and the barrier height ( Φ b) are determined by performing different plots from the forward bias current–voltage ( I– V) and reverse bias capacitance–voltage ( C– V) characteristics. Thus, the barrier heights ( Φ b) for the Si Schottky diodes obtained between 0.725 and 1.051 eV, the ideality factor ( n) between 1.043 and 1.309, and the series resistance ( R S) between 12.594 and 12.950 kΩ. The energy distribution of interface states density was determined from the forward bias I– V characteristics by taking into account the bias dependence of the effective barrier height. It was concluded that the density of interface states in the considered energy range are in close agreement with each other values obtained for Zn/p-Si and Sn/p-Si Schottky diodes.