Polycrystalline Bi doped BaTiO3 ceramics were fabricated through solid state sintering reaction method; Bi (NO3)3·5H2O at (<1 mol %), was employed as a dopant. Electrical properties were investigated in the wide range of temperatures (40–700 °C) at 1 kHz frequency. Studies were made to find the understanding of the conduction process and useful implementation of the controlling parameters. XRD patterns indicated perovskite phase with tetragonal (P4/mmm) and cubic structures (Pm-3m). Curie temperature was shifted from 120 to 160 °C with Bi doping. At higher temperatures, dielectric anomalies were observed. Room temperature resistivity (ρ25) was found to decrease from 3.5×109 to 3.8×108Ω cm at the present doping level. With increasing temperature, all specimens showed semiconductor behavior with negative temperature coefficient of resistivity (NTCR) characteristics. Conductivity followed the Arrhenius law with Ea = 0.2784–0.3210 and 1.189–1.1579 eV which can be attributed to the ionic conduction lined by Vo· and Vo··. vacancies. Increasing drift mobility with Bi doping at higher temperatures focused the rise in conductivity. Well-defined hysteresis P-E loops measured at room temperature showed ferroelectric characteristics.