Abstract
Abstract InPNBi alloy semiconductor is grown for the first time on InP substrates by liquid phase epitaxy (LPE) technique by adding minute amounts of polycrystalline InN and Bi to the growth melt (upto 3 wt% of InN and 3 wt% of Bi in the melt). Energy dispersive X-ray (EDX) spectroscopy shows the presence of Bi and N in the material. Crystalline quality of the layer and the lattice contraction and dilation with respect to the substrate are demonstrated by high resolution X-Ray diffraction (HRXRD) measurements on layers containing N and Bi in different ratios. This result is qualitatively substantiated from the values of N and Bi contents obtained from the analysis of the X-ray photoelectron spectroscopy (XPS) measurements performed on each layer. XPS further provides details of the N and Bi bonding with In in the lattice. Raman spectroscopy measurements are done on the layers to investigate the different vibrational modes associated with the constituent elements and their bonds. 10 K photoluminescence (PL) indicate band gap reduction in the alloy upto 63 meV due to the incorporation of N and Bi atoms at the P sites of the InP lattice.
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