Piezotronic Transistors Research Articles

Piezotronic Transistor Based on Topological Insulators.

Piezotronics and piezophototronics are emerging fields by coupling piezoelectric, semiconductor, and photon excitation effects for achieving high-performance strain-gated sensors, LEDs, and solar cells. The built-in piezoelectric potential effectively controls carrier transport characteristics in piezoelectric semiconductor materials, such as ZnO, GaN, InN, CdS, and monolayer MoS2. In this paper, a topological insulator piezotronic transistor is investigated theoretically based on a HgTe/CdTe quantum well. The conductance, ON/OFF ratio, and density of states have been studied at various strains for the topological insulator piezotronic transistor. The ON/OFF ratio of conductance can reach up to 1010 with applied strain. The properties of the topological insulator are modulated by piezoelectric potential, which is the result of the piezotronic effect on quantum states. The principle provides a method for developing high-performance piezotronic devices based on a topological insulator.

Recent Progress on Piezotronic and Piezo‐Phototronic Effects in III‐Group Nitride Devices and Applications

Wurtzite‐structured III‐group nitrides, like GaN, InN, AlN, and their alloys, present both piezoelectric and semiconducting properties under straining owing to the polarization of ions in a crystal with non‐central symmetry. The piezoelectric polarization charges are created at the interface when a strain is applied. As a result, a piezoelectric potential (piezopotential) is produced, which is used as a “gate” to tune/control the charge transport behavior across a metal/semiconductor interface or a p‐n junction. This is called as piezotronic effect. A series of piezotronic devices and applications have been developed, such as piezotronic nanogenerators (NGs), piezotronic transistors, piezotronic logic devices, piezotronic electromechanical memories, piezotronic enhanced biochemical, and gas sensors and so on. With the flourished development of piezotronic effect, the piezo‐phototronic effect, as the three‐way coupling of piezoelectric polarization, semiconductor properties, and optical excitation, utilizes the piezopotential to modulate the energy band profile and control the carrier generation, transportation, separation, and/or recombination for improving performances of optoelectronic devices. This paper intends to provide an overview of the rapid progress in the emerging fields of piezotronics and piezo‐phototronics, covering from the fundamental principles to devices and applications. This study will provide important insight into the potential applications of GaN based electronic/optoelectronic devices in sensing, active flexible/stretchable electronics/optoelectronics, energy harvesting, human‐machine interfacing, biomedical diagnosis/therapy, and prosthetics.

Light-Emission Enhancement in a Flexible and Size-Controllable ZnO Nanowire/Organic Light-Emitting Diode Array by the Piezotronic Effect

Enhancing the light emission of LED arrays by the piezotronic effect of ZnO NWs has recently attracted wide attention for the visual mapping of pressure. Here, to overcome deficiencies of ZnO LEDs, such as uncontrollable emission and poor emission efficiency, we designed a flexible, patterned ZnO/organic light-emitting device by combining the advantages of organic light-emitting materials and the piezoelectric effect of ZnO nanowires (NWs). The spatial resolution of the device can be tuned by the pattern size of the ZnO NW array. In addition, the light-emission character is solely determined by the organic light-emitting layer. The light-emission performance of the organic device is enhanced by the piezotronic transistors of the ZnO NW array through the modification of the energy band and reducing the Schottky barrier at the interface of the electrode and the semiconductor. By combining the advantages of the organic material and the piezotronic effect of ZnO NWs, this device shows potential for many appli...

Ultrasensitive Vertical Piezotronic Transistor Based on ZnO Twin Nanoplatelet.

High sensitivity of pressure/strain sensors is the key to accurately evaluating external mechanical stimuli and could become more important in future generations of human-machine interfaces and artificial skin. Here we report the study of a two-terminal piezotronic transistor based on ZnO twin nanoplatelets (TNPT). Owing to the mirror symmetrical structure of ZnO twin nanplatelet, compressive pressure-induced positive piezoelectric polarization charges created at both metal-semiconductor interfaces can simultaneously lower both Schottky barrier heights and thus significantly modulate the carrier transport. Our device exhibits the highest pressure sensitivity of 1448.08-1677.53 meV/MPa, which is more than ∼20 times larger than the highest value reported previously, and a fast response time of <5 ms. In addition, it can be used as a photodector with an ultrahigh external photoresponsivity of ∼1.45 × 104 AW-1, which is ∼105 times larger in magnitude than that of commercial UV photodetectors. The coupling between the mirror symmetrical structure and strong piezotronic effect in ZnO twin nanoplatelets may enable the development of ultrasensitive pressure/strain sensors for various applications such as artificial skin, health monitoring, and adaptive biomedical probes.

Ultrasensitive 2D ZnO Piezotronic Transistor Array for High Resolution Tactile Imaging.

In this paper, a new kind of 2D piezotronic transistor (PT) with the highest sensitivity till date has been designed and demonstrated, and the 2DPT array with ultrahigh spatial resolution has been developed through assembling ZnO nanoplatelets into ordered nanoplatelet array. As active sensors by directly converting applied mechanical actuations into electrical control signals without applying gate voltage, the ZnO 2DPT array has a great advantage as a fundamental component of piezotronics. The 2DPT array paves the way for a large-scale and integrated production of two terminal vertical transistors, which will contribute to its application in many fields such as human-machine interfacing, smart sensor, and processor systems.

High-performance piezo-phototronic solar cell based on two-dimensional materials

Piezotronic and piezo-phototronic are two emerging fields of flexible electronics and nanoelectronics using by piezoelectric semiconductor materials, such as ZnO, GaN, InN and CdS. Recent experiments shown piezoelectric and semiconductor properties of monolayer MoS2, which have been applied as nanogenertor and piezotronic transistor. Two-dimensional piezoelectric semiconductor can be utilized for high-performance photovoltaic devices. In this paper, a two-dimensional material piezo-phototronic solar cell is studied theoretically based on a monolayer MoS2 metal-semiconductor contact. The current-voltage characteristics, open circuit voltage, maximum output power, fill factor and power conversion efficiency have been studied for the piezo-phototronic solar cell. The modulation level of piezo-phototronic effect is presented to evaluate the performance under applied strain. The piezo-phototronic effect can increase the open circuit voltage 5.8% at strain of 1%. This principle can be a new way to develop high-performance two-dimensional solar cells.

Theoretical study on the top- and enclosed-contacted single-layer MoS2 piezotronic transistors

Recently, the piezotronic effect has been observed in two-dimensional single-layer MoS2 materials, which have potential applications in force and pressure triggered or controlled electronic devices, sensors, and human-machine interfaces. However, classical theory faces the difficulty in explaining the mechanism of the piezotronic effect for the top- and enclosed-contacted MoS2 transistors, since the piezoelectric charges are assumed to exist only at the edge of the MoS2 flake that is far from the electronic transport pathway. In the present study, we identify the piezoelectric charges at the MoS2/metal-MoS2 interface by employing both the density functional theory and finite element method simulations. This interface is on the transport pathway of both top- and enclosed-contacted MoS2 transistors, thus it is capable of controlling their transport properties. This study deepens the understanding of piezotronic effect and provides guidance for the design of two-dimensional piezotronic devices.

Density functional studies on wurtzite piezotronic transistors: influence of different semiconductors and metals on piezoelectric charge distribution and Schottky barrier

The mechanical–electrical coupling properties of piezoelectric semiconductors endow these materials with novel device applications in microelectromechanical systems, sensors, human–computer interfaces, etc. When an applied strain is exerted on a piezoelectric semiconductor, piezoelectric charges are generated at the surface or interface of the semiconductor, which can be utilized to control the electronic transport characteristics. This is the fundamental working mechanism of piezotronic devices, called the piezotronic effect. In the present report, a series of piezotronic transistors composed of different electrode metals and semiconductors is examined using density functional theory calculation. It is found that the influence of semiconductors on the piezotronic effect is larger than the impact of metals, and GaN and CdS are promising candidates for piezotronic and piezo-phototronic devices, respectively. The width of the piezoelectric charge distribution obtained in the present study can be used as a parameter in classical finite-element-method based simulations, which provide guidance on designing high-performance piezotronic devices.

Ballistic transport in single-layer MoS2 piezotronic transistors

Because of the coupling between semiconducting and piezoelectric properties in wurtzite materials, strain-induced piezo-charges can tune the charge transport across the interface or junction, which is referred to as the piezotronic effect. For devices whose dimension is much smaller than the mean free path of carriers (such as a single atomic layer of MoS2), ballistic transport occurs. In this study, transport in the monolayer MoS2 piezotronic transistor is studied by presenting analytical solutions for two-dimensional (2D) MoS2. Furthermore, a numerical simulation for guiding future 2D piezotronic nanodevice design is presented.

Piezotronic Effect in Strain-Gated Transistor of a-Axis GaN Nanobelt.

Due to the non-centrosymmetric crystal structures, wurtzite family semiconducting materials possess piezoelectric properties and exhibit polarizations along certain directions upon straining. Utilizing strain-induced piezoelectric polarization charges to modulate the energy band structures and thus to tune/control the transport processes of charge carriers is referred to as the piezotronic effect. Distinct from the previous studies of c-axis GaN nanowires, here we systematically study the piezotronic-effect-induced modifications of energy band structures and the corresponding influence on electronic transport properties of a-axis GaN nanobelts. The physical mechanism is carefully illustrated and further confirmed by theoretical simulations via finite element analysis. The spatial distributions of local carrier concentration and the energy band diagrams of a-axis GaN under various straining conditions are calculated. This work provides a thorough understanding of strain-gated transport properties of a-axis GaN piezotronic transistors and its future applications in semiconductor devices.

Density functional studies on edge-contacted single-layer MoS2 piezotronic transistors

The piezotronic effect uses strain-induced piezoelectric charges at interfaces and junctions to tune and/or control carrier transport in piezoelectric semiconductor devices. This effect has recently been observed in single-layer 2D MoS2 materials. However, previous work had found that metallic states are generated at the edge of a free-standing MoS2 flat sheet, and these states may screen the piezoelectric charges. Using density functional theory simulations, we found that the metal–MoS2 interface structure plays an important role in enhancing both the piezoelectric and piezotronic effects in MoS2 transistors by breaking the metallic state screening effect at the MoS2 edge. This study not only provides an understanding of the piezoelectric and piezotronic effects based on first principles calculations but also offers guidance for the design of two-dimensional piezotronic devices.

Piezotronic Effect in Polarity-Controlled GaN Nanowires.

Using high-quality and polarity-controlled GaN nanowires (NWs), we studied the piezotronic effect in crystal orientation defined wurtzite structures. By applying a normal compressive force on c-plane GaN NWs with an atomic force microscopy tip, the Schottky barrier between the Pt tip and GaN can be effectively tuned by the piezotronic effect. In contrast, the normal compressive force cannot change the electron transport characteristics in m-plane GaN NWs whose piezoelectric polarization axis is turned in the transverse direction. This observation provided solid evidence for clarifying the difference between the piezotronic effect and the piezoresistive effect. We further demonstrated a high sensitivity of the m-plane GaN piezotronic transistor to collect the transverse force. The integration of c-plane GaN and m-plane GaN indicates an overall response to an external force in any direction.

Piezotronic transistors in nonlinear circuit: Model and simulation

For the materials that simultaneously exhibit piezoelectric and semiconductor properties, such as wurtzite ZnO, GaN and InN, as well as two-dimensional single MoS2, piezoelectric charges induced by externally applied strain can tune/control carrier transport at a metal-semiconductor contact or semiconductor junction, which is named piezotronic effect. Metal-semiconductor-metal piezotronic transistors are key piezotronic nanodevices for electromechanical applications, and they are typical nonlinear elements. In this paper, a simplified current-voltage analysis solution of piezotronic transistors is developed, which can be used for circuit design and simulation. Furthermore, the typical nonlinear circuit: Chua’s circuit based on piezotronic transistors is simulated. We find that the output signal of the piezotronic transistor circuit can be switched and changed asymmetrically by externally applied strain. This study provides insight into the nonlinear properties of the piezotronic transistor, as well as guidance for piezotronic transistor nonlinear circuit application.

First principle simulations of piezotronic transistors

Piezoelectric semiconductors, such as wurtzite structured ZnO, GaN, and InN, have novel properties owing to piezoelectric polarization tuned/controlled electronic transport characteristics. Under an externally applied strain, piezoelectric charges are created at an interface or junction, which are likely to tune and modulate the local band structure. Taking an Ag-ZnO-Ag two-terminal piezotronic transistor as an example, strain-dependent piezoelectric charge distributions and modulation of Schottky barrier heights (SBHs) at metal/semiconductor interfaces have been investigated by the first principle simulations. The width of piezocharge distribution is calculated by the density function theory and the Poisson equation. The modulations of SBHs at two interfaces show opposite trend under the applied strain. This study not only provides an understanding about the piezotronic effect from quantum theory point of view, but also a new method to calculate the key parameter for optimizing the design of piezotronic devices.

Piezotronic Effect in Solution-Grown p-Type ZnO Nanowires and Films

Investigating the piezotronic effect in p-type piezoelectric semiconductor is critical for developing a complete piezotronic theory and designing/fabricating novel piezotronic applications with more complex functionality. Using a low temperature solution method, we were able to produce ultralong (up to 60 μm in length) Sb doped p-type ZnO nanowires on both rigid and flexible substrates. For the p-type nanowire field effect transistor, the on/off ratio, threshold voltage, mobility, and carrier concentration of 0.2% Sb-doped sample are found to be 10(5), 2.1 V, 0.82 cm(2)·V(-1)·s(-1), and 2.6 × 10(17) cm(-3), respectively, and the corresponding values for 1% Sb doped samples are 10(4), 2.0 V, 1.24 cm(2)·V(-1)·s(-1), and 3.8 × 10(17) cm(-3). We further investigated the universality of piezotronic effect in the as-synthesized Sb-doped p-type ZnO NWs and reported for the first time strain-gated piezotronic transistors as well as piezopotential-driven mechanical energy harvesting based on solution-grown p-type ZnO NWs. The results presented here broaden the scope of piezotronics and extend the framework for its potential applications in electronics, optoelectronics, smart MEMS/NEMS, and human-machine interfacing.

Correction to Strain-Gated Piezotronic Transistors Based on Vertical Zinc Oxide Nanowires

Correction to Strain-Gated Piezotronic Transistors Based on Vertical Zinc Oxide Nanowires

Strain-Gated Piezotronic Transistors Based on Vertical Zinc Oxide Nanowires

Strain-gated piezotronic transistors have been fabricated using vertically aligned ZnO nanowires (NWs), which were grown on GaN/sapphire substrates using a vapor-liquid-solid process. The gate electrode of the transistor is replaced by the internal crystal potential generated by strain, and the control over the transported current is at the interface between the nanowire and the top or bottom electrode. The current-voltage characteristics of the devices were studied using conductive atomic force microscopy, and the results show that the current flowing through the ZnO NWs can be tuned/gated by the mechanical force applied to the NWs. This phenomenon was attributed to the piezoelectric tuning of the Schottky barrier at the Au-ZnO junction, known as the piezotronic effect. Our study demonstrates the possibility of using Au droplet capped ZnO NWs as a transistor array for mapping local strain. More importantly, our design gives the possibility of fabricating an array of transistors using individual vertical nanowires that can be controlled independently by applying mechanical force/pressure over the top. Such a structure is likely to have important applications in high-resolution mapping of strain/force/pressure.

Fundamental Theory of Piezotronics

Due to polarization of ions in crystals with noncentral symmetry, such as ZnO, GaN, and InN, a piezoelectric potential (piezopotential) is created in the crystal when stress is applied. Electronics fabricated using the inner-crystal piezopotential as a gate voltage to tune or control the charge transport behavior across a metal/semiconductor interface or a p-n junction are called piezotronics. This is different from the basic design of complimentary metal oxide semiconductor (CMOS) field-effect transistors and has applications in force and pressure triggered or controlled electronic devices, sensors, microelectromechanical systems (MEMS), human-computer interfacing, nanorobotics, and touch-pad technologies. Here, the theory of charge transport in piezotronic devices is investigated. In addition to presenting the formal theoretical frame work, analytical solutions are presented for cases including metal-semiconductor contact and p-n junctions under simplified conditions. Numerical calculations are given for predicting the current-voltage characteristics of a general piezotronic transistor: metal-ZnO nanowire-metal device. This study provides important insight into the working principles and characteristics of piezotronic devices, as well as providing guidance for device design.