Abstract
Due to the non-centrosymmetric crystal structures, wurtzite family semiconducting materials possess piezoelectric properties and exhibit polarizations along certain directions upon straining. Utilizing strain-induced piezoelectric polarization charges to modulate the energy band structures and thus to tune/control the transport processes of charge carriers is referred to as the piezotronic effect. Distinct from the previous studies of c-axis GaN nanowires, here we systematically study the piezotronic-effect-induced modifications of energy band structures and the corresponding influence on electronic transport properties of a-axis GaN nanobelts. The physical mechanism is carefully illustrated and further confirmed by theoretical simulations via finite element analysis. The spatial distributions of local carrier concentration and the energy band diagrams of a-axis GaN under various straining conditions are calculated. This work provides a thorough understanding of strain-gated transport properties of a-axis GaN piezotronic transistors and its future applications in semiconductor devices.
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