On-chip Optical Interconnects Research Articles

Demultiplexing-free ultra-compact WDM-compatible multimode optical switch assisted by mode exchanger

Abstract Silicon-based optical switches are integral to on-chip optical interconnects, and mode-division multiplexing (MDM) technology has enabled modes to function as carriers in routing, further boosting optical switches’ link capacity. However, traditional multimode optical switches, which typically use Mach–Zehnder interferometer (MZI) structures and mode (de)multiplexers, are complex and occupy significant physical space. In this paper, we propose and experimentally demonstrate a novel demultiplexing-free dual-mode 3 × 3 thermal-optical switch based on micro-rings (MRs) and mode exchangers (MEs). All MRs are designed to handle TE1 mode, while the ME converts TE0 mode to TE1 mode, enabling separate routing of both modes. Bezier curves are employed to optimize not only the ME, but also the dual-mode 45° and 90° waveguide bends, which facilitate the flexible and compact layout design. Moreover, our structure can support multiple wavelength channels and spacings by adding pairs of MRs, exhibiting strong WDM compatibility. The switch has an ultra-compact footprint of 0.87 × 0.52 mm2. Under both “all-bar” and “all-cross” configurations, its insertion losses (ILs) remain below 8.7 dB at 1,551 nm, with optical signal-to-noise ratios (OSNRs) exceeding 13.0 dB. Also, 32 Gbps data transmission experiments validate the switch’s high-speed transmission capability.

High-speed carbon nanotube photodetector based on a planarized silicon waveguide

The integration of silicon waveguides with low-dimensional materials with excellent optoelectronic properties can enable compact and highly integrated optical devices with multiple advantages for multiple fields. A carbon nanotube (CNT) photodetector integrated on the silicon waveguide has the potential to meet on-chip high-speed optical interconnection systems, based on the outstanding properties of CNTs such as picosecond-level intrinsic photoresponse time, high charge carrier mobility, broad spectral response, high absorption coefficient, and so on. However, the thermal stability of the device may be compromised due to the local suspension in the channel for the height difference between the WG and the substrate. Here, we report a low-cost and low-optical-loss method to achieve the planarized silicon waveguide. After that, the CNT photodetectors integrated on the original and planarized waveguide with asymmetric palladium (Pd)-hafnium (Hf) metal contacts are fabricated. The influence of this planarization method on the performance of devices is analyzed via comparing the dark leakage current, the leakage current rectification ratio (CRR), the series resistances (R S ), and the photoelectric response. Finally, a CNT photodetector based on the planarized waveguide with a photocurrent (Iph) ∼510.84nA, a photoresponsivity (R I ) ∼51.04mA/W, the dark current ∼0.389µA, as well as a 3 dB bandwidth ∼34GHz at the large reverse voltage −3V is shown.

Crosstalk reduction for Arrayed waveguide gratings on Silicon-on-Insulator platform

Ultracompact silicon-based arrayed waveguide gratings (AWGs) with low loss and low crosstalk are essential for on-chip optical interconnect and miniaturized spectroscopic analysis systems. In our previous research, we demonstrated the crosstalk reduction by utilizing constant projection period for phased array waveguide on the tangent line to the grating pole to reduce the imaging error induced by phased array waveguide end point positions [1] and using deep etching waveguides at the interface of free propagation region to further decrease the footprint of phase region of an AWG to reduce fabrication imperfections induced phase error [2]. Here we first study the effect of curved waveguides in the phased array of 16 × 400 GHz AWGs on the adjacent crosstalk of output channels. According to the AWGs made in our fabrication platform and the testing results of five dies from one wafer at different locations, the AWGs with equal length of single-mode curved waveguides have an average adjacent crosstalk level of ∼ 4 dB smaller than those with equal length of narrow single-mode waveguides composed of straight and curved waveguides in their phased array. Based on the design of equal curved waveguide length in phased array, in combination with our reported approaches on crosstalk reduction, 16 × 200 GHz, 8 × 800 GHz and 8 × 1250 GHz AWGs are fabricated. For characterization, five dies including all designs from different locations of the fabricated wafer are tested. Experimental results show that among these five dies, the best adjacent crosstalk levels are less than − 21.97 dB, −25.72 dB, −24.83 dB and the worst adjacent crosstalk levels are less than − 20.51 dB, −25.03 dB, −24.34 dB for 16 × 200 GHz, 8 × 800 GHz and 8 × 1250 GHz AWGs with FPR angle of 120°, respectively, within the passband width of 25 % channel spacing. The on-chip insertion losses for all output channels of these fabricated AWGs are less than 3 dB.

Infrared Light-Emitting Diodes Based on Chirality-Sorted Carbon Nanotube Films.

An important goal in carbon nanotube optoelectronics is to achieve a high-performance near-infrared light source. But there are still many challenges such as the purity of single-walled carbon nanotube (SWCNT) chirality, nonradiative defects, thin-film quality, and device structure design. Here, we realize infrared light-emitting diodes (LEDs) based on chirality-sorted (10, 5) SWCNT network films, which operate at a low bias voltage and emit at a telecom O band of 1290 nm. Asymmetric palladium (Pd) and hafnium (Hf) contacts are used as electrodes for hole and electron injection, respectively. However, the large Schottky barrier at the interface of the SWCNTs and the Hf electrode, primarily resulting from the polymer wrapped on the nanotube surface during the sorting process, leads to inefficient electron injection and thus a low electroluminescence efficiency. We find that the efficiency of electron injection can be improved by the local doping of the nanotubes with dielectric layers of YOX-HfO2, which reduces the Schottky barrier at the SWCNT/Hf interface. Accordingly, the (10, 5) SWCNT film-based LED achieves an external quantum efficiency of larger than 0.05% without any optical coupling structure. With further improvement, we expect that such an infrared light source will have great application potential in the carbon nanotube monolithic optoelectronic integrated system and on-chip optical interconnection, especially in the field of short-distance optical fiber communications and data center.

Ultra-compact acousto-optic modulation using on-chip integrated Bragg gratings on lithium niobate-chalcogenide hybrid platform.

An ultra-compact and efficient acousto-optic modulator based on a thin-film lithium niobate-chalcogenide (ChG) hybrid platform was designed and realized. In this approach, π phase-shift Bragg grating has an ultra-short effective interaction length of only ∼ 300 µm and a compact footprint of 200 × 300 µm2. The strong microwave-acoustic coupling and superior photo-elastic property of the ChG allow us to achieve a half-wave voltage of Vπ = 1.08 V (4.07 V) for the π phase-shift Bragg grating (waveguide Bragg grating), corresponding to VπL = 0.03 V·cm (0.09 V·cm). This acousto-optic modulator exhibits a compact size, and low power consumption, and can be used for on-chip optical interconnects and microwave photonics.

Mode-Independent Optical Switch Based on Graphene-Polymer Hybrid Waveguides

Mode-division multiplexing (MDM) is a promising multiplexing technique to further improve the transmission capacity of optical communication and on-chip optical interconnection systems. Furthermore, the multimode optical switch is of great importance in the MDM system, since it makes the MDM system more flexible by directly switching multiple spatial signals simultaneously. In this paper, we proposed a mode-independent optical switch based on the graphene–polymer hybrid waveguide platform that could process the TE11, TE12, TE21 and TE22 modes in a few-mode waveguide. The presented switch is independent of the four guided modes, optimizing the buried position of graphene capacitors in the polymer waveguide to regulate the coplanar interaction between the graphene capacitors and spatial modes. The TE11, TE12, TE21 and TE22 modes can be regulated simultaneously by changing the chemical potential of graphene capacitors in a straight waveguide. Our presented switch can enable the independent management of the spatial modes to be more flexible and efficient and has wide application in the MDM transmission systems.

Above 20 GHz high frequency operation of mid-infrared doughnut-shaped microcavity quantum cascade lasers

Microresonator-based high-speed single-mode quantum cascade lasers are ideal candidates for on-chip optical data interconnection and high sensitivity gas sensing in the mid-infrared spectral range. In this paper, we propose a high frequency operation of single-mode doughnut-shaped microcavity quantum cascade laser at ∼4.6 µm. By leveraging compact micro-ring resonators and integrating with grounded coplanar waveguide transmission lines, we have greatly reduced the parasitics originating from both the device and wire bonding. In addition, a selective heat dissipation scheme was introduced to improve the thermal characteristics of the device by semi-insulating InP infill regrowth. The highest continuous wave operating temperature of the device reaches 288 K. A maximum −3 dB bandwidth of 11 GHz and a cut-off frequency exceeding 20 GHz in a microwave rectification technique are obtained. Benefiting from the notch at the short axis of the microcavity resonator, a highly customized far-field profile with an in-plane beam divergence angle of 2.4° is achieved.

Silicon-based compact eight-channel wavelength and mode division (de)multiplexer for on-chip optical interconnects.

A compact wavelength and mode division (de)multiplexer is proposed for multiplexing a total of eight guided TE modes of a 220nm thick silicon-on-insulator waveguide with input channels at two wavelengths of 1.55 and 2µm for wavelength division multiplexing. The (de)multiplexer is composed of four sequentially arranged sections with bus waveguides of increasing widths. The first section uses an asymmetric directional coupler to couple one TE mode at 1.55µm, while each of the next three sections consists of two collocated directional couplers to simultaneously couple two TE modes of the bus waveguide, one at each wavelength of 1.55 and 2µm. Three linear adiabatic tapers are designed to connect the consecutive bus waveguides. The fundamental TE mode of the bus waveguide at 1.55 or 2µm is coupled by using another adiabatic taper from a single-mode input waveguide. The simulation results show that over a broad bandwidth of >100n m the insertion loss and crosstalk for both wavelength bands is <1.15d B and <-27d B, respectively. In addition, a compact device footprint with a total coupling length of ∼61µm is achieved due to the use of collocated directional couplers in three sections.

Monolithic Quantum Dot Discrete Mode Laser on SOI

Single-longitudinal-mode light sources on a silicon platform exhibit tremendous potential in data transmission, integrated on-chip optical interconnects, and optical ranging. A unique InAs/GaAs quantum dot discrete mode (DM) laser directly grown on a silicon-on-insulator (SOI) substrate with embedded silicon gratings has been demonstrated here, which is regrowth-free and compatible with integrated silicon photonics. Attributed to refractive index perturbation and optical feedback from embedded silicon gratings prepatterned on the SOI substrate, this DM laser can provide stable single-mode operation with a threshold current of 45 mA and an output power of 9 mW. The maximum optical signal-to-noise ratio (OSNR) achieved is 43.6 dB with an optical linewidth of 157 kHz. The 3 dB direct modulation bandwidth is measured as 3.6 GHz. The DM laser can be externally modulated at 70 Gbit/s with non-return-to-zero (NRZ) modulation format and 80 Gbit/s under 4-level pulsed amplitude (PAM4) modulation format. Such SOI-based DM laser paves the way toward large-scale and high-power on-chip integrated lasers.

Ultracompact programmable inverse-designed nanophotonic devices based on digital subwavelength structures.

Inverse design is a powerful approach to achieve ultracompact nanophotonic devices. Here, we propose an ultracompact programmable near-infrared nanophotonic device platform to dynamically implement inverse-designed near-infrared devices with different functions by programming the state of the phase-change material filled in each pixel. By tuning PCM block by block, the subwavelength condition for inverse-designed ultracompact devices is satisfied with large tuning pixel size. Based on the inverse-design device platform with a footprint of 6.4µm×8µm, we design and theoretically demonstrate four power splitters with different split ratios and one mode multiplexer working in the near-infrared band. The average excess losses for the power splitters with ratios of 0:1,1:1, 2:1, and 3:1 are less than 0.82, 0.65, 0.82, and 1.03dB over a wavelength span of 100nm, respectively. Meanwhile, the insertion losses of the mode multiplexer are 1.4 and 2.5dB for T E 0 and T E 1 mode, respectively, and the average crosstalk is less than -20 and -19d B, respectively. The five different devices could be configured online in a nonvolatile way by heating phase change materials with an off-chip laser, which may significantly enhance the flexibility of on-chip optical interconnections.

Wideband and Channel Switchable Mode Division Multiplexing (MDM) Optical Power Divider Supporting 7.682 Tbit/s for On-Chip Optical Interconnects.

Silicon photonics (SiPh) are considered a promising technology for increasing interconnect speed and capacity while decreasing power consumption. Mode division multiplexing (MDM) enables signals to be transmitted in different orthogonal modes in a single waveguide core. Wideband MDM components simultaneously supporting wavelength division multiplexing (WDM) and orthogonal frequency-division multiplexing (OFDM) can significantly increase the transmission capacity for optical interconnects. In this work, we propose, fabricate and demonstrate a wideband and channel switchable MDM optical power divider on an SOI platform, supporting single, dual and triple modes. The switchable MDM power divider consists of two parts. The first part is a cascaded Mach-Zehnder interferometer (MZI) for switching the data from their original TE0, TE1 and TE2 modes to different modes among themselves. After the target modes are identified, mode up-conversion and Y-branch are utilized in the second part for the MDM power division. Here, 48 WDM wavelength channels carrying OFDM data are successfully switched and power divided. An aggregated capacity of 7.682 Tbit/s is achieved, satisfying the pre-forward error correction (pre-FEC) threshold (bit-error-rate, BER = 3.8 × 10-3). Although up to three MDM modes are presented in the proof-of-concept demonstration here, the proposed scheme can be scaled to higher order modes operation.

Unidirectional emission of GaN-on-Si microring laser and its on-chip integration

Abstract GaN-based microring lasers grown on Si are promising candidates for compact and efficient light sources in Si-based optoelectronic integration and optical interconnect due to their small footprints, low mode volume, low power consumption, and high modulation rate. However, the high symmetry of circular microcavity leads to isotropic emission, which not only reduces the light collection efficiency, but also affects other adjacent devices during data transmission. In this study, the unidirectional lasing emission of room-temperature current-injected GaN-based microring laser was realized by coating metal Ag on the microring sidewall and integrating a direct coupled waveguide. The light was efficaciously confined in the cavity and only emitted from the waveguide, which avoided optical signal crosstalk with other adjacent devices. Furthermore, we integrated a microdisk at the other end of the waveguide as a photodetector, which could effectively detect the output power of the microring laser from the direct coupled waveguide. Therefore, a preliminary on-chip integration of GaN-based microring laser, waveguide and photodetector on Si substrate was successfully demonstrated for the first time, opening up a new way for on-chip integration and optical interconnect on a GaN-on-Si platform.

High order coupled microring resonator filters for on-chip optical interconnects with steep edge response

ABSTRACT In this paper, high-order microring resonator filters coupled serially up to the 7th order are proposed for on-chip optical interconnects. This work mainly focuses on achieving a flat-top, higher out-of-band rejection ratio, and enhanced group delay value than previously demonstrated microring filters. Further, the effect of varying inter-resonator coupling coefficients on the filtering operation of wavelength 1552 nm is investigated, using the continued fraction method, and optimum conditions for coupling coefficients between ring-ring waveguides are realized to obtain steep edge response. The proposed design exhibits a minimum group delay of 7.457 ps at a coupling value of 0.04.

Research progress of intelligent design of on-chip optical interconnection devices

&lt;sec&gt;Compared with traditional communication technologies such as electrical interconnection, optical interconnection technology has the advantages of large bandwidth, low energy consumption, anti-interference, etc. Therefore, optical interconnection is becoming an important approach and development trend of short distance and very short distance data terminal communication. As the chip level optical interconnection is implemented, silicon on insulator (SOI) based on-chip optical interconnection has been widely utilized with the support of a series of multiplexing technologies. In recent decades, many on-chip optical interconnection devices have been developed by using conventional design methods such as coupled-mode, multimode interference, and transmission line theories. However, when used in device design, these conventional methods often face the problems such as complex theoretical calculations and high labor costs. Many of the designed devices also encounter the problems of insufficient compactness and integration, and single function.&lt;/sec&gt;&lt;sec&gt;Intelligent design method has the advantages such as pellucid principle, high freedom of optimization, and good material compatibility, which can solve the problems of conventional design methods to a large extent. With the widespread use of intelligent design methods in the design of on-chip optical interconnection devices, three main trends have emerged. Firstly, the size of on-chip optical interconnect device is gradually developing towards ultra compact size. Secondly, the number of intelligently designed controllable on-chip optical interconnect devices is increasing. Thirdly, on-chip optical interconnect devices are gradually developing towards integration and systematization. This paper summarizes the most commonly used intelligent design methods of photonic devices, including intelligent algorithms based intelligent design methods and neural networks based intelligent design methods. Then, the above three important research advances and trends of intelligently designed on-chip optical interconnection devices are analyzed in detail. At the same time, the applications of phase change materials in the design of controllable photonic devices are also reviewed. Finally, the future development of intelligently designed on-chip optical interconnection devices is discussed.&lt;/sec&gt;

Silicon-based compact mode converter using bricked subwavelength grating

Facing the increasing capacity requirements of on-chip optical interconnects, mode division multiplexing technology (MDM), which fully uses the different spatial eigenmodes at the same wavelength as independent channels to transmit optical signals, has attracted tremendous interest. Mode-order converter that can convert the fundamental mode into high-order mode is a key component in MDM system. However, it is still very challenging to achieve compact mode-order converters with high performances. Subwavelength grating (SWG) can be equivalent to homogenous material, which has the prominent advantages such as controlling over birefringence, dispersion and anisotropy, thus making photonic devices possess high performance. Wheras the conventional SWG only needs single-etch step, but the implementation of SWG structure usually requires a fabrication resolution on the order of 100 nm and below, which is difficult for current wafer-scale fabrication technology. The anisotropic response of SWG can be further engineered by introducing bricked topology structure, providing an additional degree of freedom in the design. Meanwhile, the requirement for fabrication resolution can also be reduced (&gt; 100 nm). In this work, we experimentally demonstrate compact TE&lt;sub&gt;0&lt;/sub&gt;-TE&lt;sub&gt;1&lt;/sub&gt; mode-order converter and TE&lt;sub&gt;0&lt;/sub&gt;-TE&lt;sub&gt;2&lt;/sub&gt; mode-order converter by using a bricked subwavelength grating (BSWG) based on a silicon-on-insulator (SOI) with the BSWG having a minimum feature size of 145 nm. In the proposed mode-order converter, a quasi-TE&lt;sub&gt;0&lt;/sub&gt; mode is generated in the BSWG region, which can be regarded as an effective bridge between the two TE modes to be converted. Flexible mode conversion can be realized by only choosing appropriate structural parameters for specific mode transitions between input/output modes and the quasi-TE&lt;sub&gt;0&lt;/sub&gt; mode. By combining three-dimensional (3D) finite difference time domain (FDTD) and particle swarm optimization (PSO) method, TE&lt;sub&gt;0&lt;/sub&gt;-TE&lt;sub&gt;1&lt;/sub&gt; mode-order converter and TE&lt;sub&gt;0&lt;/sub&gt;-TE&lt;sub&gt;2&lt;/sub&gt; mode-order converter are optimally designed. They can convert TE&lt;sub&gt;0&lt;/sub&gt; mode into TE&lt;sub&gt;1&lt;/sub&gt; and TE&lt;sub&gt;2&lt;/sub&gt; mode with conversion length of 9.39 µm and 11.27 µm, respectively. The simulation results show that the insertion loss of &lt; 1 dB and crosstalk of &lt; –15 dB are achieved for both TE&lt;sub&gt;0&lt;/sub&gt;-TE&lt;sub&gt;1&lt;/sub&gt; mode-order converter and TE&lt;sub&gt;0&lt;/sub&gt;-TE&lt;sub&gt;2&lt;/sub&gt; mode-order converter, their corresponding working bandwidths being 128 nm (1511–1639 nm) and 126 nm (1527–1653 nm), respectively. The measurement results indicate that insertion loss and crosstalk are, respectively, less than 2.5 dB and –10 dB in a bandwidth of 68 nm (1512–1580 nm, limited by the laser tuning range and grating coupler).

Realization of GHz band integrated optical links in a radio frequency Si Ge bipolar process operating at 650 to 850 nm wavelength

A series of on-chip optical links of 50-μm length, utilizing 650 to 850 nm propagation wavelength, with Si avalanche-mode optical sources, silicon nitride-based waveguides, and Si Ge detectors, have been designed and realized, with a 0.35-μm SiGe radio frequency bipolar integrated circuit process. The optical coupling between the optical source and the detectors was realized by a set of dedicated designed optical waveguides, which were all fabricated with components of the SiGe radio frequency process. All components were fully integrated on the same silicon chip. The Si avalanche-mode light-emitting diodes (Si AMLEDs) emitted in the 650- to 850-nm wavelength regime. Correspondingly, small microdimensioned detectors utilize SiGe detector technology with detection efficiencies of up to 0.85 in the same wavelength regime and with a transition frequency of up to 20 GHz. Best performances for the optical links as realized show optical coupling of up to 5 GHz with a total optical link budget loss of −40 dB. A set of link results are presented and several interpretations are given on current realizations. The technology is particularly suitable for realization of low-cost on-chip optical signal processing, optical interconnects, and various types of on-chip microsensors.

Topology-optimized silicon-based dual-mode 4 × 4 electro-optic switch

Abstract Silicon-based optical switch is one of the key components for on-chip optical interconnect systems, and mode division multiplexing technology has been employed to boost optical switches’ channel capacity. However, the majority of the proven multimode optical switches have a switching time in the microsecond range, which is insufficient for some applications. In this paper, we design and experimentally demonstrate a high-speed dual-mode 4 × 4 optical switch based on a mode-diversity scheme, composed of four pairs of mode multiplexers and de-multiplexers, and two optimized single-mode 4 × 4 optical switches. Fast switching is enabled based on the carrier dispersion effect. At the same time, we improve the performances of the optical switch by reducing the number of optical switch units used in the 4 × 4 Spanke–Beneš architecture. Its power consumptions are reduced by ∼17%. Its insertion losses are within 8.8 dB in the wavelength range of 1525–1565 nm in the both sates of “through” and “all-cross”, while the optical signal-to-noise ratios are larger than 12.8 dB. Also, 50 Gbps data transmission experiments verify the device’s data transmission functionality.

Two-Dimensional Elliptical Microresonator Arrays for Wide Flat Bandwidth and Boxlike Filter Response

Based on two-dimensional elliptical microresonator arrays, we designed and fabricated a compact filter on the silicon-on-insulator platform with potential applications for on-chip optical interconnects. The fabricated optical filter exhibits a wide flat bandwidth of 951 GHz with the shape factor of 0.57 at the through port for the 3×20 arrays. The out-of-band rejection is as high as 50 dB. The crosstalk is also very low (−46 dB). The spectral shows a boxlike response. Although there are sixty rings used in the array, the insertion loss is still very small (≤1.36 dB).

(Digital Presentation) Fabrication of Thick SiGe／Ge Multiple Quantum Wells on Ge-on-Si and Their Optical Properties

Recently, silicon photonics has been attracting increased attention toward the realization of on-chip optical interconnection, which requires high-efficiency light-emitting devices to be integrated on Si substrates. Although Ge is an indirect-band-gap semiconductor like Si, it is expected that strong direct-transition luminescence can be obtained from tensile-strain induced Ge-on-Si. We have previously reported that highly efficient room temperature EL emission can be obtained from strained Ge-on-Si p-i-n diodes[1]. Further increase in luminescence intensity and control of emission wavelengths can be made possible by introducing a quantum well structure in the active layer. Although the fabrication of high-quality strained SiGe layers on Ge is essential for the fabrication of quantum well structures, critical thickness limits the total growth thickness and numbers of strained layers, which makes device applications difficult. We have succeeded in fabricating a strained SiGe layer that is much thicker than the critical thickness by using a patterning method, and this result is very promising for the fabrication of SiGe/Ge multi-quantum well structure[2]. It also makes it possible to increase the number of layers of MQW structure. In this work, we fabricate relatively thick strained SiGe/Ge MQW structures on Ge-on-Si by utilizing the patterning method, and evaluate their crystallinity and optical properties.In experiments, the crystal growth was carried out with solid source molecular beam epitaxy. The Ge-on-Si was fabricated using the so-called two-step method. 40 and 500 nm thick Ge layers were subsequently grown on a Si(100) or Si(111) substrate at 350 and 600℃, respectively, followed by annealing at 800℃ for 10 min. Subsequently we carried out the patterning of the Ge-on-Si(111) substrate by photolithography process. 50nm thick Ge buffer layer ware grown on a Ge-on-Si(100) or Ge-on-Si(111), 6nm thick Si0.1Ge0.9 barrier layer and 10nm thick Ge well layer ware grown with 10-20 cycles at 350℃.Laser microscopic measurements showed no clear roughness on the surface. X ray diffraction measurements show periodic peaks originated from the multi layers of SiGe/Ge, which indicates that the sample has high crystallinity and abrupt interface between the Ge and SiGe layers. TEM observation indicated that no defect was found inside the crystal in the MQW structure. Photoluminescence (PL) measurements were carried out at room temperature and a PL peak originated from the quantum-confinement in the SiGe/Ge MQW was obtained. This PL peak wavelength was also found to shift depending on the Ge concentration of the SiGe. PL intensity of the peak was increased compared with Ge-on-Si without the SiGe/Ge MQW overgrowth. From these results, it is demonstrated that high quality SiGe/Ge multiple quantum structures can be fabricated on Ge-on-Si by utilizing the patterning method and strong room temperature PL was obtained from the MQW, indicating that SiGe/Ge MQW is promising for the applications to light-emitting devices integrated on the Si platform.[1] K.Yamada et al. Appl. Phys. Express 14 045504(2021) [2] Y.Wagatsuma et al. Appl. Phys. Express 14 025502(2021) Figure 1

Ultra-Compact Digital Metasurface Polarization Beam Splitter via Physics-Constrained Inverse Design

Inverse design effectively promotes the miniaturization of integrated photonic devices through the modulation of subwavelength structures. Utilizing a theoretical prior based inverse design, we propose an ultra-compact integrated polarizing beam splitter consisting of a standard silicon-on-insulator (SOI) substrate and a tunable air–silicon column two-dimensional code metasurface, with a footprint of 5 × 2.7 μm2. The effective refractive index of the waveguide is modulated by adjusting the two-dimensional code morphology in the additional layer to achieve efficient polarization beam splitting. The simulation results demonstrate high performance, with a low insertion loss (&lt;0.87 dB) and high extinction ratio (&gt;10.76 dB) in a bandwidth of 80 nm covering the C-band. The device can withstand manufacturing errors up to ±20 nm and is robust to process defects, such as the outer proximity effect, and thus is suitable for ultra-compact on-chip optical interconnects.