Crosstalk reduction for Arrayed waveguide gratings on Silicon-on-Insulator platform

Abstract

Ultracompact silicon-based arrayed waveguide gratings (AWGs) with low loss and low crosstalk are essential for on-chip optical interconnect and miniaturized spectroscopic analysis systems. In our previous research, we demonstrated the crosstalk reduction by utilizing constant projection period for phased array waveguide on the tangent line to the grating pole to reduce the imaging error induced by phased array waveguide end point positions [1] and using deep etching waveguides at the interface of free propagation region to further decrease the footprint of phase region of an AWG to reduce fabrication imperfections induced phase error [2]. Here we first study the effect of curved waveguides in the phased array of 16 × 400 GHz AWGs on the adjacent crosstalk of output channels. According to the AWGs made in our fabrication platform and the testing results of five dies from one wafer at different locations, the AWGs with equal length of single-mode curved waveguides have an average adjacent crosstalk level of ∼ 4 dB smaller than those with equal length of narrow single-mode waveguides composed of straight and curved waveguides in their phased array. Based on the design of equal curved waveguide length in phased array, in combination with our reported approaches on crosstalk reduction, 16 × 200 GHz, 8 × 800 GHz and 8 × 1250 GHz AWGs are fabricated. For characterization, five dies including all designs from different locations of the fabricated wafer are tested. Experimental results show that among these five dies, the best adjacent crosstalk levels are less than − 21.97 dB, −25.72 dB, −24.83 dB and the worst adjacent crosstalk levels are less than − 20.51 dB, −25.03 dB, −24.34 dB for 16 × 200 GHz, 8 × 800 GHz and 8 × 1250 GHz AWGs with FPR angle of 120°, respectively, within the passband width of 25 % channel spacing. The on-chip insertion losses for all output channels of these fabricated AWGs are less than 3 dB.