Unidirectional emission of GaN-on-Si microring laser and its on-chip integration

Abstract

Abstract GaN-based microring lasers grown on Si are promising candidates for compact and efficient light sources in Si-based optoelectronic integration and optical interconnect due to their small footprints, low mode volume, low power consumption, and high modulation rate. However, the high symmetry of circular microcavity leads to isotropic emission, which not only reduces the light collection efficiency, but also affects other adjacent devices during data transmission. In this study, the unidirectional lasing emission of room-temperature current-injected GaN-based microring laser was realized by coating metal Ag on the microring sidewall and integrating a direct coupled waveguide. The light was efficaciously confined in the cavity and only emitted from the waveguide, which avoided optical signal crosstalk with other adjacent devices. Furthermore, we integrated a microdisk at the other end of the waveguide as a photodetector, which could effectively detect the output power of the microring laser from the direct coupled waveguide. Therefore, a preliminary on-chip integration of GaN-based microring laser, waveguide and photodetector on Si substrate was successfully demonstrated for the first time, opening up a new way for on-chip integration and optical interconnect on a GaN-on-Si platform.