The manuscript performs a review of the differentiated new layout styles for the Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) that can boost their electrical performance and ionizing radiation tolerance. Firstly, we present the elements of the first generation of layout styles, the effects intrinsic to their structures, and the first-order analytical models of their drain current. After, we study the first element of the second generation of layout styles, which presents a hybrid gate geometry, aiming mainly to further reduce its effective channel length in comparison to those reached by the first generation and consequently further boosting the electrical performance of the analog MOSFETs. The experimental results in room temperature and high temperature found to show that the first element of the second generation can be considered an alternative hardness-by-design to improve the electrical performance and ionizing radiation of the analog MOSFETs.