Ultrahigh current and ultralow power dissipation of Janus monolayer IIIA-VIA Ga2XY MOSFETs

Abstract

With the advances of two-dimensional semiconductors, it is promising for the miniaturization of highly integrated circuits. However, the high leakage current, small on-state current and unnecessary power consumption hinder the development of high-performance nanodevices. Here, we design sub-5-nm double-gate monolayer Ga2XY (X, Y = S, Se and Te) metal–oxidesemiconductor field-effect transistors. For all the designed devices, the on-state current, intrinsic delay time and power delay product can meet the standard of the International Technology Roadmap for Semiconductor in 2028. Additionally, the devices based on large bandgap materials have strong inhibition effect on leakage current. In particular, the Ga2SSe device has optimized subthreshold swing as low as 60.7 mV/dec and Ion of 5082 μA/μm (about 6 times higher than the high-performance requirements). The extremely low energy-delay product of 3.64 × 10−31 Js/μm is obtained for the Ga2SeTe device. Therefore, monolayer Ga2XY can be expected for the application of next-generation high-performance electronic nanodevices.