Modified Core-Shell Double Gate Junctionless MOSFET with High ON-State and Low Leakage Currents

Abstract

In this proposed article, an investigation has been studied for low leakage current and high on-state current with heavily doping in source and drain region of Double Gate Junctionless Metal Oxide Semiconductor Field-Effect Transistor (DG JL MOSFET). Conventional DG JL MOSFET is facing problem in fabrication because of high contact resistance at source and drain region. This contact resistance can be reduced by considering heavily doping in source and drain region but this leads to high leakage current for Conv. JL MOSFET. However, low doping, narrow channel thickness and high work function gate materials are used Conv. DG JL MOSFET and Core-Shell DG JL MOSFET are providing low leakage current but on-state current is also reduced. The proposed modified Core-Shell DG JL MOSFET with heavily doping in source and drain to reduce the contact resistance is displaying low leakage current with high amount of on-state current. RF performance such as Trans-conductance, capacitance, Cut-off frequency, maximum operating frequency and intrinsic power gain (S21), have also been investigated of modified Core-Shell DG JL MOSFET.