Abstract
A block-by-block performance analysis of a novel Metal Oxide Semiconductor Field Effect Transistor (MOSFET)-based absorber antenna has been presented. The proposed integrated antenna is a solution to the negative effect of impedance mismatch between the power amplifier and antenna in the front end of communication systems. The clockwise diode base quasi circulator device used in the proposed design has been observed to have an insertion loss (S21 and S32) of 7 dB and 9.2 dB, respectively, with a return loss (S22) of 2.8 dB. The MOSFET-based absorber presented an insertion loss, return loss, and absorption efficiency of 2.75 dB, 3.3 dB, and > 90%, respectively. The switching speed for the proposed MOSFET-based absorber antenna model has been observed as 0.15 ns.
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