Metal Insulator Research Articles

Anisotropic metal–insulator transition in strained VO2(B) single crystal

Mechanical strain can induce noteworthy structural and electronic changes in vanadium dioxide, imparting substantial scientific importance to both the exploration of phase transitions and the development of potential technological applications. Unlike the traditional rutile (R) phase, bronze-phase vanadium dioxide [VO2(B)] exhibits an in-plane anisotropic structure. When subjected to stretching along distinct crystallographic axes, VO2(B) may further manifest the axial dependence in lattice–electron interactions, which is beneficial for gaining insights into the anisotropy of electronic transport. Here, we report an anisotropic room-temperature metal–insulator transition in single-crystal VO2(B) by applying in-situ uniaxial tensile strain. This material exhibits significantly different electromechanical responses along two anisotropic axes. We reveal that such an anisotropic electromechanical response mainly arises from the preferential arrangement of a strain-induced unidirectional stripe state in the conductive channel. This insulating stripe state could be attributed to the in-plane dimerization within the distorted zigzag chains of vanadium atoms, evidenced by strain-modulated Raman spectra. Our work may open up a promising avenue for exploiting the anisotropy of metal–insulator transition in vanadium dioxide for potential technological applications.

Secondary roughness effect of surface microstructures on secondary electron emission and multipactor threshold for PTFE-filled and PI-filled single ridge waveguides

Secondary electron yield (SEY) is a dominant factor in determining the multipactor threshold. In this study, we analyzed the secondary roughness effect of surface microstructures for plastic dielectric on SEY reduction and multipactor mitigation. A single ridge waveguide (SRW) operating in Ku-band, filled with polytetrafluoroethylene (PTFE) or polyimide (PI), was designed with a dielectric–metal multipactor gap. By employing a femtosecond laser, periodic microstructures were fabricated on PTFE and PI surfaces to suppress SEY. The SEY peak values of PTFE and PI decreased from 2.05 to 1.40 and 1.37 to 1.07 by the porous surface. The surface morphologies and cross-sectional images of the porous PTFE and PI demonstrated the existence of secondary roughness structures. Via simulation, we obtained multipactor thresholds of 8496 W, 12 374 W, and 9397 W for the SRWs filled with untreated PTFE surface, ideal porous surface (without secondary roughness), and real porous surface (with secondary roughness). Similar works were implemented for the PI-filled SRWs, resulting in simulated multipactor thresholds of 7640 W, 11 327 W, and 9433 W. The results indicate that the multipactor effect may not be effectively suppressed under the influence of secondary roughness structures such as plastic velvet and foam. Besides, simulation works indicated that the radio frequency electric field could extract secondary electrons from the microstructures, weakening the mitigation effect of microstructures on multipactor. The impact of surface charging on electron motion was also analyzed by considering energy distribution. It was suggested that the surface microstructures of plastic dielectrics lead to a decrease in the surface charge density and the electrostatic field strength, weakening the self-extinguishing effect and lowering the multipactor threshold. This study provides an in-depth analysis of the effect of secondary roughness on SEY and multipactor for organic dielectrics, which makes significant sense for the further investigation of dielectric multipactor.

A Wearable All-Printed Textile-Based 6.78 MHz 15 W-Output Wireless Power Transfer System and Its Screen-Printed Joule Heater Application

While research in passive flexible circuits for Wireless Power Transfer (WPT) such as coils and resonators continues to advance, limitations in their power handling and low efficiency have hindered the realization of efficient all-printed high-power wearable WPT receivers. Here, we propose a screen-printed textile-based 6.78 MHz resonant inductive WPT system using planar inductors with concealed metal-insulator-metal (MIM) tuning capacitors. A printed voltage doubler rectifier based on Silicon Carbide (SiC) diodes is designed and integrated with the coils, showing a power conversion efficiency of 80-90% for 2-40 W inputs over a wide load range. Compared to prior wearable WPT receivers, it offers an order of magnitude improvement in power handling along with higher efficiency (approaching 60%), while using all-printed passives and a compact rectifier. The coils exhibit a simulated Specific Absorption Rate (SAR) under 0.4 W/kg for 25 W received power, and under 21 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$^{\circ }$</tex-math></inline-formula> C increase in the coils' temperature for a 15 W DC output. Additional fabric shielding is investigated, reducing harmonics emissions by up to 17 dB. We finally demonstrate a wirelessly-powered textile-based carbon-silver Joule heater, capable of reaching up to 60 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$^{\circ }$</tex-math></inline-formula> C at 2 cm separation from the transmitter, as a wearable application which can only be wireless-powered using the proposed system.

Modulating resistive switching in Ni0.5Zn0.5Fe2O4 memristors: The role of manganese doping concentrations

Memristors, recognized as key devices for mitigating the von Neumann bottleneck, show great potential in non-volatile memory technology. Their performance is fundamentally linked to the chemical composition and structural characteristics of their intermediate dielectric layer. Owing to the inherent advantages of metal oxides, such as their simplistic chemical makeup and superior thermal stability, memristors featuring a Metal-Insulator-Metal (MIM) sandwich structure with metal oxides as the intermediate layer have received extensive focus. In this study, a Pt/Ni0.5Zn0.5MnxFe2-xO4(NZMFO)/Pt composite film was prepared, and its resistance switching behavior was modulated by altering the doping concentration of Mnn+ in NZMFO. The experimental results indicate that altering the Mnn+ doping concentration does significantly impact the content of oxygen vacancies. As the concentration of Mnn+ increases from 0.10 to 0.20 at.%, the content of oxygen vacancies correspondingly rises from 46.58 % to 76.42 %. Concurrently, variations in Mnn+ doping concentration significantly alter the resistance switching properties of the Pt/NZMFO/Pt composite films. This includes elevating the set/reset voltage, diminishing the resistance ratio, and enhancing the durability with the augmentation of Mnn+ concentration. By meticulously adjusting the Mnn+ doping concentration, we can achieve a memristor characterized by superior performance across all metrics. Considering all performance aspects, this study determined that the Pt/NZMFO/Pt thin film memristor with x = 0.15 exhibits adequate endurance (100 cycles), high data retention, and stable set/reset voltage. This work underscores the critical role of Mnn+ doping concentration in optimizing the electrochemical properties of NZFO memristors, illustrating a strategic pathway to engineer memristive devices with enhanced performance for future non-volatile memory applications.

Resistive switching memory using buckybowl sumanene-inserted bilayer graphene

The bowl-shaped molecules of the nanocarbon material called sumanene have structural flexibility (bowl inversion). In the case of the sumanene molecule used as an intercalant between graphene layers, it has been predicted that holes and electrons are unevenly distributed according to the bowl inversion. Using the property of sumanene molecules, we expected that resistive switching for the nonvolatile memory applications could be achieved by the sumanene-inserted bilayer graphene. In this study, metal–insulator–metal devices with sumanene-inserted bilayer graphene are fabricated. As a result, it is observed that the resistance of the sumanene-inserted bilayer graphene changes by applying voltage, demonstrating resistive switching characteristics. This result implies the possibility of realizing a novel ultra-thin resistive memory device using nanocarbon technologies.

Comparative study of the interface passivation properties of LiF and Al2O3 using silicon MIS capacitor

Lithium fluoride (LiF) is currently a very popular dielectric material used as a passivation or transport layer in a variety of applications, especially in high-efficiency solar cells. Despite this, its conduction properties and interface behavior with silicon remain largely unexplored. In this work, a LiF metal–insulator–semiconductor (MIS) structure is fabricated and characterized, and its properties are compared to the well-understood aluminum oxide (Al2O3) MIS structure. First, a higher current density in LiF compared to Al2O3 is highlighted, as well as its PN junction-like behavior with n-type silicon (n-Si), being rather unconventional for a dielectric layer. C–V measurements showcase the likely presence of an interface defect, causing an increase in the apparent doping and a shift in the flatband voltage VFB by +70 meV. This defect is found to be of the acceptor type, which renders the interface fixed charge more negative and improves the field-effect passivation in the case of a negative Qf. Finally, a density of interface states Dit≈2×1011 cm−2 eV−1 was found for LiF/n-Si, which is a low value showing appropriate chemical passivation at the interface. Overall, this work enables us to shed more light on the interface properties of LiF on n-Si, which is an essential step toward its wider use in state-of-the-art solar cells and other silicon-based devices.

Breakdown dynamics and instability of underwater metallic aerosol bubble atomized by electrical explosion

This study delves into the electrophysical processes and intricate fluid dynamics of an electrical-explosion-induced bubble in water. A fine copper wire is heated up and exploded to dense metallic aerosol (vapor–drop mixture) via a μs-timescale 10 kA current pulse, crossing a wide range of the density–temperature parametric space. High-speed photography along with discharge diagnostics reveals two modes for plasma development (restrike) inside explosion products: gas discharge and volume ionization. Experimental results indicate the metal–insulator transition of metal can easily throttle down circuit current at a moderate degree of vaporization, resulting in a free-expanding metallic aerosol in the presence of a quasi-direct current axial electric field of kV/cm level. After dozens of μs, an anode-directed, “ionization wave” is observed inside the aerosol bubble, propagating with a speed of 3–10 km/s. Remarkably, adjustments in the electric field permit the observation of cathode-directed discharge development. Increasing the charging voltage or wire diameter promotes the overheating degree, accompanied by partial ionized striation of electro-thermal instability. With sufficient high overheating of the wire (ξ &amp;gt; 1), the gas discharge disappears and restrike is dominated by volume ionization.

Structural mode coupling in perovskite oxides using hypothesis-driven active learning

Finding the ground-state structure with minimum energy is paramount to designing any material. In ABO3-type perovskite oxides with Pnma symmetry, the lowest energy phase is driven by an inherent trilinear coupling between the two primary order parameters such as rotation and tilt with antiferroelectric displacement of the A-site cations as established via hybrid improper ferroelectric mechanism. Conventionally, finding the relevant mode coupling driving phase transition requires performing first-principles calculations which is computationally time-consuming as well as expensive. It involves following an intuitive iterative hit and trial method of (a) adding two or multiple mode vectors, followed by (b) evaluating which combination would lead to the ground-state energy. In this study, we show how a hypothesis-driven active learning framework can identify suitable mode couplings within the Landau free energy expansion with minimal information on amplitudes of modes for a series of double perovskite oxides with A-site layered, columnar and rocksalt ordering. This scheme is expected to be applicable universally for understanding atomistic mechanisms derived from various structural mode couplings behind functionalities, for e.g. polarization, magnetization and metal–insulator transitions.

First-Principles Prediction of High and Low Resistance States in Ta/h-BN/Ta Atomristor.

Two-dimensional (2D) materials have received significant attention for their potential use in next-generation electronics, particularly in nonvolatile memory and neuromorphic computing. This is due to their simple metal-insulator-metal (MIM) sandwiched structure, excellent switching performance, high-density capability, and low power consumption. In this work, using comprehensive material simulations and device modeling, the thinnest monolayer hexagonal boron nitride (h-BN) atomristor is studied by using a MIM configuration with Ta electrodes. Our first-principles calculations predicted both a high resistance state (HRS) and a low resistance state (LRS) in this device. We observed that the presence of van der Waals (vdW) gaps between the Ta electrodes and monolayer h-BN with a boron vacancy (VB) contributes to the HRS. The combination of metal electrode contact and the adsorption of Ta atoms onto a single VB defect (TaB) can alter the interface barrier between the electrode and dielectric layer, as well as create band gap states within the band gap of monolayer h-BN. These band gap states can shorten the effective tunneling path for electron transport from the left electrode to the right electrode, resulting in an increase in the current transmission coefficient of the LRS. This resistive switching mechanism in monolayer h-BN atomristors can serve as a theoretical reference for device design and optimization, making them promising for the development of atomristor technology with ultra-high integration density and ultra-low power consumption.

Large-scale SU-8 Micro-Pole-Arrays decorated with Hierarchical Metal-Dielectric-Metal nanostructures as sensitive 3D SERS substrates

Dielectric layer-mediated surface-enhanced Raman scattering (SERS) substrates are currently explored for ultrasensitive detection and expected to provide uniform SERS response by the virtue of three-dimensional micro-nanostructures, dielectric layer, and plasmonic metal nanostructures. For this purpose, the present work reports on the development of the metal-dielectric-metal (MDM) three-dimensional (3D) micro-pole-arrays structure based on SU-8 colloid lithography. By utilizing the large-scale periodic arrangement characteristics of SU-8 colloidal lithography, along with the hot spot effect created by the nano-gap between MDM, we successfully prepared an array of SERS substrates that exhibit both periodicity and multi-dimensional plasmonic coupling effect. Compared to a single metal nanoparticle substrate, the SERS activity of the substrate is significantly enhanced, and the substrate has trace detection ability (LOD of detection of 10−12 mol/L for R6G). The enhancement factor (EF) is 5.72 × 107. Periodicity ensures that the prepared substrate has good reproducibility (RSD < 8 %) and stability. Furthermore, the substrate modified with HS-β-CD demonstrated potential for rapid trace SERS detection of polychlorinated biphenyls (PCB-77) (LOD of 10−8 mol/L for PCB-77). The results indicate that the proposed substrate has the potential for application in the preparation of SERS sensors with high sensitivity and uniformity.

A Nanosensor Based on Optical Principles for Temperature Detection Using a Gear Ring Model

Based on the characteristics of plasmonic waveguides and resonators, we propose a refractive index (RI) sensor that couples a gear ring with a metal–insulator–metal (MIM) waveguide. Using the finite element method (FEM), we conduct extensive spectral analysis of the sensor’s properties in the near-infrared spectrum. Furthermore, we investigate the structural parameters affecting the refractive index sensing characteristics. This study reveals that the complexity of the ring cavity edge can significantly enhance the sensitivity of the nanosensor. Optimal structural performance parameters are selected when the number of gears is six, resulting in a sensitivity of 3102 nm/RIU and a Figure of Merit (FOM) of 57.4 for the sensing characteristics of the gear ring. It possesses the advantages of small size and high sensitivity. This nanoscale sensor design demonstrates high sensitivity in the field of industrial material temperature detection.

Selective modulation of electronic transport in VO2 induced by 10 keV helium ion irradiation

Vanadium dioxide (VO2) manifests an abrupt metal–insulator transition (MIT) from monoclinic to rutile phases, with potential use for tunable electronic and optical properties and spiking neuromorphic devices. Understanding pathways to modulate electronic transport in VO2, as well as its response to irradiation (e.g., for space applications), is critical to better enable these applications. In this work, we investigate the selective modulation of electronic transport in VO2 films subject to different 10 keV helium ion (He+) fluences. Under these conditions, the resistivity in the individual monoclinic and rutile phases varied by 50%–200%, while the MIT transformation temperature remains constant within 4 °C independent of irradiation fluence. Importantly, different trends in the resistivity of the monoclinic and rutile phases were observed both as a function of total He fluence as well as in films grown on different substrates (amorphous SiO2/Si vs single crystal Al2O3). Through a combination of measurements including majority carrier sign via Seebeck, low frequency noise, and TEM, our investigation supports the presence of different kinds of point defects (V in; O in), which may arise due to grain boundary defect interactions. Our work suggests the utility of He irradiation for the selective modulation of VO2 transport properties for neuromorphic, in contrast to other established but non-selective methods, like doping.

Terahertz beam reconfigurable phase gradient metasurface of VO2 based on different metal–insulator transition temperatures

Terahertz beam reconfigurable phase gradient metasurface of VO2 based on different metal–insulator transition temperatures

Photonic curing for innovative fabrication of flexible metal oxide optoelectronics

Flexible optoelectronics, based on non-planar substrates, hold promise for diverse applications such as wearables, health monitors, and displays due to their cost-effective manufacturing methods. Despite the superior properties of metal oxides, the challenge of processing them at high temperatures incompatible with plastic substrates necessitates innovative annealing approaches. Photonic curing, which delivers microsecond to millisecond broadband (200–1500 nm) light pulses on a sample, emerges as a viable solution. Depending on the optical properties, the targeted film absorbs the radiant energy resulting in rapid heating while the transparent substrate absorbs a minimal amount of light and remains at ambient temperature. The light intensity can be high, but since the light pulse is short, the total energy absorbed by the sample remains low and will not damage the plastic substrate. This perspective explores the innovative application of photonic curing to fabricate flexible metal oxide optoelectronics, including thin-film transistors, metal–insulator–metal devices, solar cells, transparent conductors, and Li batteries, emphasizing the conversion of sol–gel precursors to metal oxides. However, this technique was initially developed for sintering metal nanoparticles to conductive patterns and poses intriguing challenges in explaining its mechanism for metal oxide conversion, especially considering the limited absorption of visible light by most sol–gel precursors. The review delves into UV-induced photochemistry, common flexible metal-oxide optoelectronic components, and non-intuitive distinctions between photonic curing and thermal annealing. By elucidating the distinctive role of photonic curing in overcoming temperature-related challenges and advancing the fabrication of flexible metal oxide optoelectronics, this perspective offers valuable insights that could shape the future of flexible optoelectronics.

Strategic Integration of a Vegetative Component on a Metal Roof Base: An Evaluation of Its Impacts on Thermal and Acoustic Performance in the Tropics

This paper attempts to ascertain the thermal and acoustic impacts of introducing a vegetative roof layer on insulated and uninsulated metal roofs for tropical climates, through field measurements in Skudai, Johor, Malaysia, that were conducted for both dry and wet days. Four small-scale roof modules were tested, namely an uninsulated metal roof (uiMDR), an insulated metal roof (iMDR), and two identical corresponding modules with an additional vegetative component (uiGR and iGR, respectively). Outdoor ambient temperature (Tamb) was the most influential correlated variable affecting the roof outer surface temperature (RTOS) in 50% of the assessed scenarios. On the selected dry day, the inter-quartile ranges (IQR) of iGR, iMDR, uiGR, and uiMDR were 6.21 °C, 8.32 °C, 6.69 °C, and 1.66 °C, respectively; the IQRs were 1.6 °C, 4.11 °C, 2.59 °C, and 1.78 °C, respectively, on the selected wet day. Based on design U-value calculations, iGR was better than iMDR and uiMDR for both dry and wet days. The U-value of uiGR was also better than iMDR under dry-day conditions. The Wilcoxon signed-rank test also indicated a statistically significant difference in the roof inner surface temperature (RTIS) measurements (p-value = 0.00) during Malaysian daylight hours, between 8.00 a.m. and 6.00 p.m., regardless of the weather. In terms of sound level reduction under dry-day conditions, the Kruskal–Wallis and Wilcoxon signed-rank tests showed statistically significant differences in sound level reductions, with iGR and uiGR performing better than iMDR and uiMDR (p-values = 0.00). The sound level reductions for iGR, iMDR, and uiGR were 51%, 32%, and 31%, respectively, while uiMDR experienced sound level amplifications by 6%, possibly due to the acoustic resonance effect. This proof of concept may encourage a broader application of extensive GRs in Malaysia using metal roofs, beyond the conventional RC base construction method.

Improved breakdown performance in recessed-gate normally off GaN MIS-HEMTs by regrown fishbone trench

This work develops a regrown fishbone trench (RFT) structure in selective area growth (SAG) technique to fabricate recessed-gate normally off GaN metal–insulator–semiconductor high electron mobility transistors (MIS-HEMTs). The RFT structure effectively modulates the electric field at high drain and gate biases, thus allowing the device to feature improved off-state and gate breakdown performance with a high positive Vth of 2 V. The simulated carrier concentration and electric field distributions reveal the mechanism of electric field weakening by RFT architecture. Meanwhile, the current collapse phenomenon is significantly suppressed, and the gate voltage swing is also enlarged. The maximum gate drive voltage of 9.2 V for 10-year reliability of RFT GaN MIS-HEMT, together with the improved linearity and block voltage, broadens the applications of SAG devices. Furthermore, the RFT structure also provides an etching-free method for fabricating normally off GaN MIS-HEMTs with multi-dimensional gates.

Design and Optimization of Silver Nanostructured Arrays in Plasmonic Metamaterials for Sensitive Imaging Applications

This paper delves into the strategic design and optimization of silver (Ag) nanostructured arrays within plasmonic metamaterials, targeting the enhancement of imaging sensitivity. Leveraging Finite-Difference Time-Domain (FDTD) simulations, our research rigorously compares various Ag nanostructured geometries, including nanospheres, nanocones, nanodisks, and nanocubes. The aim is to pinpoint configurations that significantly enhance electric field localization on the surfaces of nanostructures, a pivotal factor. The nanocube array exhibits superior field enhancement, particularly in narrow nanogaps, suggesting its suitability for high-sensitivity applications. Further exploration into nanocube arrays reveals the crucial role of nanogap size and spacer layer thickness in tuning the optical properties through the manipulation of Fabry–Pérot and mirror image modes in metal–insulator–metal (MIM) structures. By presenting a thorough analysis of these nanostructured arrays, the study not only contributes to our understanding of the fundamental principles governing plasmonic metamaterials but also provides a solid foundation for future innovation in highly sensitive imaging applications. It underscores the importance of nanostructure design and optimization in achieving significant improvements in the performance of plasmonic devices, marking a pivotal step forward in the field of nanophotonics and its application to sensitive imaging technologies.

Surface doping manipulation of the insulating ground states in Ta2Pd3Te5 and Ta2Ni3Te5

Abstract Manipulating emergent quantum phenomena is a key issue for understanding the underlying physics and contributing to possible applications. Here we study the evolution of insulating ground states of Ta2Pd3Te5 and Ta2Ni3Te5 under in-situ surface potassium deposition via angle-resolved photoemission spectroscopy. Our results confirm the excitonic insulator character of Ta2Pd3Te5. Upon surface doping, the size of its global gap decreases obviously. After a deposition time of more than 7 min, the potassium atoms induce a metal–insulator phase transition and make the system recover to a normal state. In contrast, our results show that the isostructural compound Ta2Ni3Te5 is a conventional insulator. The size of its global gap decreases upon surface doping, but persists positive throughout the doping process. Our results not only confirm the excitonic origin of the band gap in Ta2Pd3Te5, but also offer an effective method for designing functional quantum devices in the future.

Chiral metasurface absorber with near-infrared excitation-induced dual circular dichroism

Microscopic components in metasurfaces allow precise control of electromagnetic waves, enabling chiral metasurface absorbers to adapt to different frequencies and wavelengths of electromagnetic waves, providing higher controllability. In this paper, we present a near-infrared chiral absorber utilizing a Metal-Insulator-Metal (MIM) structure, achieving selective absorption in the dual wavelength ranges of 1500–1750 nm and 2250–2750 nm. The absorber's structural layout adopts a pseudo-π configuration, featuring a unique design that establishes distinct resonance cavities between structural periods. This results in disparate responses to left-handed circularly polarized (LCP) light and right-handed circularly polarized (RCP) light, thereby attaining dual-band selectivity and adjustability. To illustrate the physical mechanism, we explore the electric and magnetic field distributions within this structure, offering deeper insights into the fundamental mechanism of selective absorption. This analysis illustrates that the charge distribution in different wavelength bands can vary with the polarization direction, forming orthogonal electric dipoles. Under the incidence of LCP and RCP, we achieved circular dichroism (CD) of 0.75 and 0.7, respectively. By adjusting parameters within individual resonance cavities, we achieve independent control over each resonance wavelength. This near-infrared chiral absorber provides unparalleled design flexibility, with implications for advancements in applications such as molecular detection and optical switching.

High stability and reliability additively manufactured metal-insulator-metal capacitors for high-temperature applications

Throughout the last few years, there has been a significant increase in demand for high-temperature capacitors due to the rising need for electronics in harsh environments, including aerospace, automotive, and oil and gas industries. With the continued growth of electronics in these environments, there is a need for the development of new materials and manufacturing techniques to drive advances in high temperature capacitor technology. Additive manufacturing is one promising approach for producing electronics that can withstand high temperatures, leading to improved performance and reliability in a wide range of applications. The present work describes the fabrication and testing of MIM (metal-insulator-metal) capacitors at high temperatures using gold as the conductor material. The substrates used in this work is 3D printed Lithoz 350D 99.8% alumina. The work details the fabrication process and evaluates the relative permittivity and the dielectric loss of high-temperature dielectric material at temperatures up to 800°C. The adhesion strength at the interfaces is examined before and after aging for up to 250 hours at temperatures as high as 750°C. The leakage current is measured for 100 hours at varying temperatures and the insulation resistance is calculated. Furthermore, the capacitance is monitored during aging at temperatures up to 700°C and frequencies as high as 1 MHz. Finally, the capacitance is measured at room temperature before and after subjecting the capacitors to 100 cycles of thermal cycling at three different temperature ranges. The adhesion between all interfaces of the MIM capacitors is found to remain high even after aging at 700°C, leakage currents are minimal and stable, and the capacitance remained very stable during and after aging and after thermal cycling.