An energy-efficient and high-speed mobile memory interface using a novel multilevel dual-band (MDB) signaling is demonstrated. The proposed MDB memory interface that incorporates pulse amplitude modulation (PAM) and RF-band signaling enables simultaneous bidirectional data links through a shared single-ended off-chip transmission line. The PAM and RF-band carries 9.2 and 4.2 Gb/s/pin, respectively. Each RF-band and PAM transceiver consumes 12.6 and 18.4 mW at 1.2 V supply, respectively. The proposed transceiver operates at 13.4 Gb/s/pin with a power efficiency of 2.3 pJ/b/pin and achieves a bit error rate $ with $2^{ {23}} {-}1$ PRBS over a distance of 5 cm. The prototype chip is fabricated in a 65-nm CMOS process with a total area of 0.13 mm $^{2}$ .
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