Linear Voltage Coefficient Of Capacitance Research Articles

Full ALD Al2O3/ZrO2/SiO2/ZrO2/Al2O3Stacks for High-Performance MIM Capacitors

Metal-insulator-metal (MIM) capacitors with full atomic-layer-deposition Al 2 O 3 /ZrO 2 /SiO 2 /ZrO 2 /Al 2 O 3 stacks were explored for the first time. As the incorporated SiO 2 film thickness increased from 0 to 3 nm, the quadratic and linear voltage coefficients of capacitance (α and β) of the MIM capacitors reduced significantly from positive values to negative ones. For the stack with 3-nm SiO 2 film, a capacitance density of 7.40 fF/μm 2 , α of -121 ppm/V 2 , and β of -116 ppm/V were achieved, together with very low leakage current densities of 3.08 × 10 -8 A/cm 2 at 5 V at room temperature (RT) and 5.89 × 10 -8 A/cm 2 at 3.3 V at 125 °C, high breakdown field of 6.05 MV/cm, and high operating voltage of 6.3 V for a 10-year lifetime at RT. Thus, this type of stacks is a very promising candidate for next generation radio frequency and analog/mixed-signal integrated circuits.

금속유기분해법을 사용한 Zr0.7Sn0.3TiO4박막 제조 및 유전특성

Zr0.7Sn0.3TiO4 (ZST) thin films were fabricated by metal-organic decomposition, and their dielectric properties were investigated in order to evaluate their potential use in passive capacitors for rf and analog/mixed signal integrated circuits. The ZST thin film annealed at the temperature of 800°C showed a dielectric constant of 27.3 and a dielectric loss of 0.011. The capacitor using the ZST film had quadratic and linear voltage coefficient of capacitance (VCC) of -65 ppm/V and -35 ppm/V at 100 kHz, respectively. It also exhibited a good temperature coefficient of capacitance (TCC) value of -32 ppm/°C at 100 kHz.

Electrical Properties of $\hbox{Bi}_{5}\hbox{Nb}_{3} \hbox{O}_{15}$ Thin Film Grown on $\hbox{TiN}/\hbox{SiO}_{2}/ \hbox{Si}$ at Room Temperature for Metal–Insulator–Metal Capacitors

Buckling was observed in Bi5Nb3O15 (BiNbO) films grown on TiN/SiO2/Si at 300°C but not in films grown at room temperature and annealed at 350 °C. The 45-nm-thick films showed a high capacitance density and a low dissipation factor of 8.81 fF/?m2 and 0.97% at 100 kHz, respectively, with a low leakage current density of 3.46 nA/cm2 at 2 V. The quadratic and linear voltage coefficients of capacitance of this film were 846 ppm/V2 and 137 ppm/V, respectively, with a low temperature coefficient of capacitance of 226 ppm/°C at 100 kHz. This suggests that a BiNbO film grown on a TiN/SiO2/Si substrate is a good candidate material for high-performance metal-insulator-metal capacitors.

Electrical Properties of the Amorphous BaTi4O9 Thin Films for Metal-Insulator-Metal Capacitors

Amorphous BaTi4O9 (BT4) film was deposited on Pt/Si substrate by RF magnetron sputter and their dielectric properties and electrical properties are investigated. A cross sectional SEM image and AFM image of the surface of the amorphous BT4 film deposited at room temperature showed the film was grown well on the substrate. The amorphous BT4 film had a large dielectric constant of 32, which is similar to that of the crystalline BT4 film. The leakage current density of the BT4 film was low and a Poole-Frenkel emission was suggested as the leakage current mechanism. A positive quadratic voltage coefficient of capacitance (VCC) was obtained for the BT4 film with a thickness of<70 nm and it could be due to the free carrier relaxation. However, a negative quadratic VCC was obtained for the films with a thickness ≥96nm, possibly due to the dipolar relaxation. The 55 nm-thick BT4 film had a high capacitance density of 5.1fF/μm2 with a low leakage current density of 11.6nA/cm2 at 2 V. Its quadratic and linear VCCs were 244ppm/V2 and -52 ppm/V, respectively, with a low temperature coefficient of capacitance of 961ppm/˚C at 100 kHz. These results confirmed the potential suitability of the amorphous BT4 film for use as a high performance metal-insulator-metal (MIM) capacitor.

High-Capacitance Metal-Insulator-Metal Capacitors Using Amorphous Sm2Ti2O7 Thin Film

Amorphous (SmT) films were investigated to assess their potential use in metal-insulator-metal (MIM) capacitors. A thick SmT film showed a high capacitance density of with a low leakage current density of at . The capacitance density increased with decreasing film thickness to for the thick film. The thick SmT film had small quadratic and linear voltage coefficients of capacitance of and , respectively, and a temperature coefficient of capacitance of at . Overall, amorphous SmT films are good candidate materials for MIM capacitors.

Electrical properties of the Sm2Ti2O7 thin films for metal-insulator-metal capacitor applications

A homogeneous crystalline Sm2Ti2O7 (ST) phase was formed in films grown at temperatures ranging between 100 and 200 °C and subsequently annealed at 900 °C. The ST film had a large dielectric constant of 58, which is similar to that of ST ceramics. The leakage current density of the ST film was low and the Poole-Frenkel emission was suggested as being the leakage current mechanism. The ST film had a negative quadratic voltage coefficient of capacitance (VCC), possibly due to the dipolar relaxation. The 100-nm-thick ST film had a high capacitance density of 5.2 fF∕μm2 with a low leakage current density of 1.34 nA∕cm2 at 2 V. Its quadratic and linear VCCs were −99.5 ppm∕V2 and 11 ppm/V, respectively, with a low temperature coefficient of capacitance of 135 ppm∕°C at 100 kHz. These results confirmed the potential for the ST film to be used as a high performance metal-insulator-metal capacitor.

Investigation on the Electrical Properties of the Ba2Ti9O20 Thin Films for Metal-Insulator-Metal Capacitor Application

Homogeneous crystalline phase was formed for the films grown at 700 and annealed at . However, second phase was also developed for the films grown at temperatures lower than and annealed at . A high capacitance density of along with a leakage current density of at were obtained for a thick crystalline BT film. This film had small quadratic and linear voltage coefficients of capacitance (VCC) of and , respectively, and a small temperature coefficient of capacitance (TCC) of at . A thick amorphous BT film grown at showed a high capacitance density of with a very low leakage current density of at . This amorphous film also showed small quadratic and linear VCCs of and , respectively, with a low TCC of at . These results demonstrate that BT films, particularly amorphous BT films, are good candidate materials for metal-insulator-metal capacitors.

High-Performance Metal–Insulator–Metal Capacitors Using Amorphous $\hbox{BaSm}_{2}\hbox{Ti}_{4}\hbox{O}_{12}$ Thin Film

The dielectric properties of the amorphous BaSm <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> Ti <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">12</sub> (BSmT) film with various thicknesses were investigated to evaluate its potential use as a metal-insulator-metal (MIM) capacitor. An amorphous 35-nm-thick BSmT film grown at 300 degC exhibited a high capacitance density of 9.9 fF/mum <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> at 100 kHz and a low leakage current density of 1.790 nA/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> at 1 V. The quadratic and linear voltage coefficients of capacitance of the film were 599 ppm/V <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> and -81 ppm/V at 100 kHz, respectively. The temperature coefficient of capacitance of the film was also low about 236 ppm/degC at 100 kHz. These results confirmed the suitability of the amorphous BSmT film as a high-performance MIM capacitor

Metal–insulator–metal capacitors using Ba 2Ti 9O 20 dielectric thin film

The dielectric properties of Ba 2Ti 9O 20 film were investigated to evaluate its potential use in metal–insulator–metal (MIM) capacitors. A homogeneous crystalline Ba 2Ti 9O 20 phase without any second phase developed for the film grown at 700 °C and rapid thermal annealed at 900 °C for 3 min. The 200 nm-thick Ba 2Ti 9O 20 film showed a capacitance density of 2.0 fF/μm 2 with a low dissipation factor of 0.016 at 100 kHz. The capacitance density of the film was low, but it could be increased by decreasing the thickness of the film. The leakage current density was approximately 0.094 nA/cm 2 at 1 V. A small linear voltage coefficient of capacitance of −690 ppm/V was obtained, together with a quadratic one of −67.41 ppm/V 2 and a small temperature coefficient of capacitance of −168.87 ppm/°C at 100 kHz. All these results show that the Ba 2Ti 9O 20 film is a good candidate material for MIM capacitors.

High-Performance Metal-Insulator-Metal Capacitors Using Amorphous BaTi4O9 Thin Film

Amorphous, thick film grown at exhibited a high capacitance density of at , which decreased slightly to at . It had a relatively high Q factor of 80 at . The leakage current density of the film was at and the leakage current mechanism was considered to be Schottky emission. The quadratic and linear voltage coefficients of capacitance of the film were and at , respectively. The temperature coefficient of capacitance of the film was also low about at . These results confirm that the amorphous film can be used as a high performance metal-insulator-metal capacitor.

$hboxBaSm_2hboxTi_4hboxO_12$Thin Film for High-Performance Metal–Insulator–Metal Capacitors

A high capacitance density of 4.84 fF/mum <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> and a low leakage current density of 4.28 fA/pFmiddotV were obtained for a 138-nm-thick crystalline BaSm <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> Ti <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">12</sub> (BST) film. The 100-nm-thick amorphous BST film exhibited a high capacitance density of 3.91 fF/mum <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> and a low leakage current of 1.24 fA/pFmiddotV. The crystalline BST film had quadratic and linear voltage coefficient of capacitance (VCC) of -295 ppm/V <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2 </sup> and 684 ppm/V, respectively, and a temperature coefficient of capacitance (TCC) of -136 ppm/degC at 100 kHz. The amorphous BST film also showed quadratic and linear VCCs of 48.6 ppm/V <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> and -738 ppm/V, respectively, with a low TCC of 169 ppm/degC at 100 kHz

RF, DC, and reliability characteristics of ALD HfO/sub 2/-Al/sub 2/O/sub 3/ laminate MIM capacitors for Si RF IC applications

High-performance metal-insulator-metal capacitors using atomic layer-deposited HfO/sub 2/-Al/sub 2/O/sub 3/ laminate are fabricated and characterized for RF and mixed-signal applications. The laminate capacitor can offer high capacitance density (12.8 fF//spl mu/m/sup 2/) up to 20 GHz, low leakage current of 4.9/spl times/10/sup -8/ A/cm/sup 2/ at 2 V and 125/spl deg/C, and small linear voltage coefficient of capacitance of 211 ppm/V at 1 MHz, which can easily satisfy RF capacitor requirements for year 2007 according to the International Technology Roadmap for Semiconductors. In addition, effects of constant voltage stress and temperature on leakage current and voltage linearity are comprehensively investigated, and dependences of quadratic voltage coefficient of capacitance (/spl alpha/) on frequency and thickness are also demonstrated. Meanwhile, the underlying mechanisms are also discussed.

High-performance MIM capacitor using ALD high-k HfO2-Al2O3 laminate dielectrics

For the first time, we successfully fabricated and demonstrated high performance metal-insulator-metal (MIM) capacitors with HfO/sub 2/-Al/sub 2/O/sub 3/ laminate dielectric using atomic layer deposition (ALD) technique. Our data indicates that the laminate MIM capacitor can provide high capacitance density of 12.8 fF//spl mu/m/sup 2/ from 10 kHz up to 20 GHz, very low leakage current of 3.2 /spl times/ 10/sup -8/ A/cm/sup 2/ at 3.3 V, small linear voltage coefficient of capacitance of 240 ppm/V together with quadratic one of 1830 ppm/V/sup 2/, temperature coefficient of capacitance of 182 ppm//spl deg/C, and high breakdown field of /spl sim/6 MV/cm as well as promising reliability. As a result, the HfO/sub 2/-Al/sub 2/O/sub 3/ laminate is a very promising candidate for next generation MIM capacitor for radio frequency and mixed signal integrated circuit applications.