Electrical Properties of $\hbox{Bi}_{5}\hbox{Nb}_{3} \hbox{O}_{15}$ Thin Film Grown on $\hbox{TiN}/\hbox{SiO}_{2}/ \hbox{Si}$ at Room Temperature for Metal–Insulator–Metal Capacitors

Abstract

Buckling was observed in Bi5Nb3O15 (BiNbO) films grown on TiN/SiO2/Si at 300°C but not in films grown at room temperature and annealed at 350 °C. The 45-nm-thick films showed a high capacitance density and a low dissipation factor of 8.81 fF/?m2 and 0.97% at 100 kHz, respectively, with a low leakage current density of 3.46 nA/cm2 at 2 V. The quadratic and linear voltage coefficients of capacitance of this film were 846 ppm/V2 and 137 ppm/V, respectively, with a low temperature coefficient of capacitance of 226 ppm/°C at 100 kHz. This suggests that a BiNbO film grown on a TiN/SiO2/Si substrate is a good candidate material for high-performance metal-insulator-metal capacitors.