Abstract
Homogeneous crystalline phase was formed for the films grown at 700 and annealed at . However, second phase was also developed for the films grown at temperatures lower than and annealed at . A high capacitance density of along with a leakage current density of at were obtained for a thick crystalline BT film. This film had small quadratic and linear voltage coefficients of capacitance (VCC) of and , respectively, and a small temperature coefficient of capacitance (TCC) of at . A thick amorphous BT film grown at showed a high capacitance density of with a very low leakage current density of at . This amorphous film also showed small quadratic and linear VCCs of and , respectively, with a low TCC of at . These results demonstrate that BT films, particularly amorphous BT films, are good candidate materials for metal-insulator-metal capacitors.
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