High-Performance Metal-Insulator-Metal Capacitors Using Amorphous BaTi4O9 Thin Film

Abstract

Amorphous, thick film grown at exhibited a high capacitance density of at , which decreased slightly to at . It had a relatively high Q factor of 80 at . The leakage current density of the film was at and the leakage current mechanism was considered to be Schottky emission. The quadratic and linear voltage coefficients of capacitance of the film were and at , respectively. The temperature coefficient of capacitance of the film was also low about at . These results confirm that the amorphous film can be used as a high performance metal-insulator-metal capacitor.