Abstract
A high capacitance density of 4.84 fF/mum <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> and a low leakage current density of 4.28 fA/pFmiddotV were obtained for a 138-nm-thick crystalline BaSm <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> Ti <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">12</sub> (BST) film. The 100-nm-thick amorphous BST film exhibited a high capacitance density of 3.91 fF/mum <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> and a low leakage current of 1.24 fA/pFmiddotV. The crystalline BST film had quadratic and linear voltage coefficient of capacitance (VCC) of -295 ppm/V <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2 </sup> and 684 ppm/V, respectively, and a temperature coefficient of capacitance (TCC) of -136 ppm/degC at 100 kHz. The amorphous BST film also showed quadratic and linear VCCs of 48.6 ppm/V <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> and -738 ppm/V, respectively, with a low TCC of 169 ppm/degC at 100 kHz
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