Leakage Mechanism Research Articles

Numerical simulation of hydrogen leakage and diffusion in a ship engine room

In order to understand and master the diffusion mechanism and spatial concentration distribution of hydrogen leakage in the engine room, this paper studies the diffusion behavior and concentration distribution of hydrogen under the coupling effect of multiple factors, and further explores the optimal installation location of the sensors. The results indicate that when the ventilation rate increases by 1, 2, and 3 times, the diffusion volume of hydrogen decreases by about 0.4, 0.5, and 0.6 times. The harm of the increase in leakage diameter is greater than the leakage pressure. And the temperature has a greater impact on the hydrogen volume fraction in areas below 4 % and a smaller impact on areas above 4 %. In this environment, the sensors should be installed at or above 5.5 m in the rear of the engine room and above the axis of the hydrogen transport pipeline interface, valves and other places prone to leakage.

Temperature and field dependencies of current leakage mechanisms in IrOx contacts on InAlN/GaN heterostructures

This Letter reports on the mechanisms of reverse leakage current transport in InAlN/GaN heterostructure Schottky diodes with intentionally oxidized iridium oxide (IrOx) contacts across a wide temperature range. Current–voltage characteristics were experimentally measured from 25 to 500 °C (≈ 300 to 773 K). Three distinct regions in the reverse bias regime of operation and their corresponding dominant current transport mechanisms are identified. A trap-assisted tunneling mechanism is observed at low reverse bias, and trap energy levels are between 1.12 and 1.99 eV. At medium reverse bias, Poole–Frenkel emission is decomposed into low-field, mid-field, and high-field regions and the related trap activation energies vary from 0.38 to 2.04 eV. At high reverse bias, the Fowler–Nordheim model is applied and the effective barrier height to tunneling is 0.78 eV. The model of the reverse leakage current constructed using the parameters associated with these transport mechanisms closely aligns with the experimental data and supports the advancement of high-temperature electronics based on IrOx -gated InAlN/GaN heterostructure technology.

Research Progress of Drilling and Completion Fluid Loss Model in Fractured Reservoir

Well loss and its accompanying reservoir damage is a common and serious problem, which not only greatly restricts the economic benefit, but also seriously affects the correct evaluation of reservoir oil and gas resources in the early stage of exploration. With the exploration and development of deep Marine carbonate oil and gas resources, fracture leakage has gradually become a frontier and hot issue to be studied urgently. Foreign scholars began to study the leakage model of fractured reservoir in the 1990s, but at present, domestic scholars mainly focus on the clastic rock model, focusing on the plugging technology and plugging materials, while ignoring the importance of the dynamic development of the leakage indirectly reflecting the leakage type and the size of the leakage channel. This paper comprehensively analyses the effects of drilling completion fluid rheology, fracture opening variation, fracture wall filtration and other factors on well loss from the time sequence of the establishment of the leakage model, summarizes the research progress of the mathematical model of leakage in fractured reservoirs, and proposes to pay attention to and strengthen the monitoring of the leakage mechanism and the dynamic process of leakage, so as to provide a theoretical basis for the rapid diagnosis of leakage types and the optimization of leakage control.

Study on the mechanism and rapid treatment method of leakage disease at the junction between the shaft and shield tunnel

Tunnel leakage disease will seriously affect the metro operation and threaten the safety of passengers. Therefore, this study investigates the mechanism of structural leakage disease at the junction between the shaft and shield tunnel through the operational tunnel in the Beijing area. Firstly, the characteristics and intrinsic cause of the leakage are analyzed by ground penetrating radar, endoscope detection, and total station. The field inspection indicates that the water-rich cavity caused by the rise of groundwater is the main external environmental factor inducing structural leakage. The uneven deformation of the junction between the shield segments and ring beam and the deterioration of the ring beam structure are the main reasons for the waterproof layer failure, which further lead to structural leakage. In addition, numerical simulations are carried out to study the leakage mechanism of the junction structure under the effects of structural uneven deformation and ring beam deterioration. The numerical results show that the leakage caused by uneven deformation of tunnel junction is significant. Especially, the water-rich cavity near the ring beam will aggravate structural leakage. Furthermore, the deterioration of the ring beam structure has a more significant effect on the structural leakage, and the leakage mainly occurs in the ring beam and ring beam-segment joints. This finding is basically consistent with the actual leakage situation. In addition, the rapid treatment method for plugging water-rich cavities and structural defects is proposed, and a new cement-based material with good non-dispersible underwater properties is developed. The surface observation and internal detection show that the rapid treatment method effectively controls structural leakage. This research can provide a reference for future similar leakage and disease control projects of metro subways in operation.

Multiferroic properties of BiFeO3 thin films with Ce substitution

In this study, we investigated the crystalline structure, ferroelectricity, leakage current density, magnetic, and nanomechanical properties of BiFeO3 (BFO) films with Ce substitution. Bi1-xCexFeO3 (BCFO) films with x = 0.00, 0.03, 0.06, 0.09, and 0.15 were deposited on glass substrates by using pulsed laser deposition. The experimental results showed that the BCFO films mainly composed the perovskite phase. The structure changed from rhombohedral when x = 0.00 to pseudo-cubic when x = 0.03, and pseudo-cubic phase coexisted with an additional Bi2Fe4O9 phase when x = 0.06–0.09. The BCFO films exhibited improved ferroelectricity and desirable magnetic characteristics. The remanent polarization (2Pr) increased significantly with the Ce concentration, reaching 189.3 μC/cm2 and 100.0 μC/cm2 when x = 0.03 and x = 0.06, respectively, but decreasing at higher Ce contents. The BCFO film with x = 0.03 had a remarkable 2Pr value of 189 μC/cm2 after 108 cycles due to the high (110) texture, fine microstructure, and flat interface resulting in strong anti-fatigue properties. The leakage mechanisms in the BCFO films were also examined. The films exhibited enhanced saturation magnetization (Ms) values ranging from 3.8 to 10.0 emu/cm3, which were attributed to suppression of the spiral spin configuration and the larger magnetic moment associated with the Ce3+ ion. The nanomechanical characteristics of the BCFO films, such as hardness, were significantly influenced by the grain size and phase composition. These findings provide valuable insights into enhancement of the multiferroic properties of BFO polycrystalline films through Ce substitution for use in various applications.

Different reverse leakage current transport mechanisms of planar Schottky barrier diodes(SBDs) on sapphire and GaN substrate

The effects of different substrates on the off-state leakage current in gallium nitride (GaN) planar diodes are experimentally demonstrated and studied by analyzing temperature-dependent current–voltage characteristics. The two devices exhibit different leakage mechanisms despite being subjected to the same process conditions. The device with a sapphire substrate shows a more intricate leakage mechanism, implying the presence of additional leakage channels compared to the device with free-standing substrates. The electrical leakage characteristics in the planar GaN-on-sapphire device (referred to as utemp-SBD) and GaN substrate device (referred to as usub-SBD) Schottky barrier diodes (SBD) can be described by two distinct processes as the reverse bias gradually increases: utemp-SBD go through the thermionic emission (TE), variable range hopping (VRH), Frenkel–Poole (FP) emission and space-charge-limited conduction (SCLC) model; The leakage conduction mechanism of usub-SBD include TE, VRH, and FP emission mechanisms. It is noteworthy that in device 1, there is a rapid increase in leakage current within the voltage range of −36 to −40 V, primarily driven by the SCLC mechanism. This effect arises due to the presence of intrinsic traps in GaN grown on a heterogeneous substrate. Additionally, in the voltage range of −7 to −50 V (348 K to 448 K), the leakage mechanism shifts from FP emission to the VRH model, possibly due to variations in the Schottky barrier height.This study provides an in-depth analysis of the leakage mechanisms observed on different substrates and offers valuable insights for the design of planar gate transistors to minimize or avoid the occurrence of leakage channels.

Understanding and Hindering the Electron Leakage in Green InP Quantum‐Dot Light‐Emitting Diodes

Indium phosphide (InP) quantum‐dot light‐emitting diodes (QLEDs) are considered as one of the most promising candidates for emerging displays owing to their good luminous performance and environmentally friendly properties. The operation of green InP QLEDs relies on the radiative recombination of electrically generated excitons, as in most QLEDs; however, the electrons injected into green InP QLEDs can easily pass through the quantum‐dot (QD) layer, resulting in a carrier imbalance and low external quantum efficiency (EQE). Herein, the mechanism of electron leakage in green InP QLEDs is revealed. Based on comparative experiments and simulations of the carrier concentration distribution, the path of electron leakage is determined and it is found that the root cause is the large Fermi energy difference between green InP QDs and indium tin oxide (ITO). To solve this problem, an ultrathin LiF layer is applied to modify the work function of the ITO, which simultaneously hinders electron leakage and enhances hole injection. Benefiting from a more balanced carrier injection, the maximum EQE of green InP QLEDs improves from 4.70% to 9.14%. In these findings, a universal mechanism is provided for hindering electron leakage in green InP QLEDs, indicating the feasibility of developing highly efficient green InP QLEDs.

Side-Channel Leakage in SFQ Circuits and Related Attacks on Qubit Control and Readout Systems

Single flux quantum (SFQ) technology is currently used as a cryogenic control and readout circuitry of superconducting quantum computers. The low power operation and high switching frequency of SFQ technology are instrumental to efficiently scale a quantum computer. With the growing interest in the hardware security of SFQ circuits, a novel side-channel leakage mechanism in SFQ-to-DC converters is uncovered in this paper. The leakage mechanism is investigated for two logic styles, namely rapid SFQ (RSFQ) and energy-efficient RSFQ (ERSFQ). By observing the fluctuations in the power supply provided by the room temperature electronics, a malicious adversary can extract critical information about the applied input signals. This type of side-channel leakage can lead to serious security vulnerabilities for superconducting electronics and quantum computers. Two potential side-channel attacks that exploit this vulnerability and target SFQ-based qubit control and readout systems are proposed.

Investigation of the leakage mechanism in multi-channel GaN-on-Si SBDs

This work presented the reverse leakage current (I R) mechanisms in multi-channel GaN-on-Si Schottky barrier diodes (SBDs). The device showed excellent performances in both ON and OFF-states thanks to the advanced multi-channel tri-gate architecture. The I R is dominated by thermal field emission at 25 °C–75 °C before pinch-off of the 2-dimensional electron gas (2DEG) channel in the Schottky region, due to the thinned Schottky barrier, which turned to be thermal emission (TE)-dominated under further elevated temperatures resulted from the small Schottky barrier height. Once the 2DEG channel is pinched off by the tri-anode, the I R is firstly dominated by Poole–Frenkel emission and then is trap-assisted tunneling after the full depletion of the channels beneath the field plates. These results are supported by excellent consistency between experimental results and theoretical models, offering a key understanding of multi-channel SBDs and shedding lights on this promising multi-channel technology for future energy conversion.

Electrical characterization of SOI pMOS device leakage

This work investigates Silicon-on-Insulator (SOI) pMOS leakage current. Temperature measurements indicates the superposition of two leakage mechanisms: band-to-band tunneling (BTBT) and Shockley-Read-Hall Field-Enhanced (SRHFE) generation recombination. Thanks to a dedicated low current measurement setup, the impact of device width (W), thickness (tsi) and polarization (back bias, drain and source) on leakage level is evaluated for both mechanisms.

Reduced levels of A20 protein prompted RIPK1-dependent apoptosis and blood-brain barrier breakdown during cerebral ischemia reperfusion injury.

Blood-brain barrier (BBB) leakage is an important cause of the exacerbation of pathological features of cerebral ischemia reperfusion injury (CIRI). However, the specific mechanism of BBB leakage is not clear. It was found that the CIRI resulted in RIPK1 activation and subsequent RIPK1-dependent apoptosis (RDA). Inhibition of RIPK1 significantly reduced BBB breakdown and brain damage. The aim of this study is to investigate the mechanism of RIPK1 in the BBB leakage during CIRI. It was discovered by proteomics that autophagy activation resulting from ischemia and reperfusion significantly downregulated the level of A20 protein. A20 is an important protein that regulates RIPK1 and RDA. It was hypothesized that activation of autophagy caused by ischemic reperfusion led to a decrease in A20 protein, which, in turn, caused the activation of RIPK1 and the occurrence of RDA, leading to leakage of the BBB. The findings in this study revealed the role of RIPK1 in the cell death and BBB leakage upon cerebral ischemia reperfusion injury, and these findings provide a novel perspective for the treatment of ischemic reperfusion.

Conduction mechanism of Schottky contacts fabricated on etch pits originating from single threading dislocation in a highly Si-doped HVPE GaN substrate

This paper reports the relationship between a single dislocation structure and current leakage mechanism observed in a Pt/n+-GaN Schottky contacts with the combined use of transmission electron microscopy (TEM) and conductive atomic force microscopy (C-AFM). The contacts were fabricated on a substrate grown by hydride vapor phase epitaxy. TEM analysis clarified that large- and small-size etch pits are attributed to mixed/screw and edge dislocations, respectively. Schottky contacts formed on the surfaces of large and small etch pits (L-EPC, S-EPC), a dislocation-free flat area (FLAT), and a Schottky barrier diode with a diameter of 50 μm (SBD) were prepared and their temperature-dependent current-voltage characteristics were measured using C-AFM. Analysis of the forward bias characteristics revealed that the Schottky barrier height increased and the ideality factor approached unity with increasing temperature. Such temperature dependence of the barrier height was well explained by barrier inhomogeneity at the metal/semiconductor interface. From the analysis of the reverse bias characteristics, we found that field emission (FE) currents caused by the high donor concentration of the sample were the dominant conduction mechanism for S-EPC and FLAT. On the other hand, for L-EPC, the FE currents were overlapped by Poole-Frenkel emission (PFE) currents. For SBD, the leakage currents were successfully explained by the FE and thermionic field emission (TFE) mechanisms by assuming dislocation regions with a lowered barrier height. These findings suggest that mixed dislocations are associated with PFE and lower the Schottky barrier.

ZnO-Doped Metal-Organic Frameworks Nanoparticles: Antibacterial Activity and Mechanisms.

Metal-Organic Frameworks (MOFs) offer new ideas for the design of antibacterial materials because of their antibacterial properties, high porosity and specific surface area, low toxicity and good biocompatibility compared with other nanomaterials. Herein, a novel antimicrobial nanomaterial, MIL-101(Fe)@ZnO, has been synthesized by hydrothermal synthesis and characterized by FTIR, UV-vis, ICP-OES, XRD, SEM, EDS and BET to show that the zinc ions are doped into the crystal lattice of MIL-101(Fe) to form a Fe-Zn bimetallic structure. MIL-101(Fe)@ZnO was found to be effective against a wide range of antibacterial materials including Staphylococcus aureus, Escherichia coli, Pseudomonas aeruginosa, Acinetobacter baumannii, Acinetobacter junii and Staphylococcus epidermidis. It has a significant antibacterial effect, weak cytotoxicity, high safety performance and good biocompatibility. Meanwhile, MIL-101(Fe)@ZnO was able to achieve antibacterial effects by causing cells to produce ROS, disrupting the cell membrane structure, and causing protein leakage and lipid preoxidation mechanisms. In conclusion, MIL-101(Fe)@ZnO is an easy-to-prepare antimicrobial nanomaterial with broad-spectrum bactericidal activity and low toxicity.

Ultra-low turn-on voltage quasi-vertical GaN Schottky barrier diode with homogeneous barrier height

Quasi-vertical Schottky Barrier Diodes (SBDs) with near to ideal turn-on voltage and ideality factor (n) of 1.02, were fabricated on a GaN on Si substrate. The average turn-on voltage and on-resistance values were found to be 0.23 ± 0.005 V (at 1 A/cm2) and 1.76 ± 0.11 mΩcm2, respectively with diode series resistance of 11 Ω. The analysis of the current–voltage curve revealed a temperature-independent barrier height, however the capacitance–voltage method showed a negative temperature coefficient. This discrepancy is discussed in the paper. Variable range hopping through dislocations is shown to be the dominant reverse current leakage mechanisms identified in the fabricated diode, with a characteristic temperature, T0 of 2 × 1010 K.

Study on the Influence Mechanism of Air Leakage on Gas Extraction Effect—A Numerical Case Study of the Coal Mine Site in Anhui

Air leakage in mine gas drainage drilling is a critical factor that affects gas extraction efficiency. It leads to a rapid decline in gas concentration, resulting in lower extraction efficiency and potential secondary disasters. To address this issue, a fully coupled gas–air mixed flow model is established in this study. The model examines the effects of extraction time, different negative pressures, and gas leakage on gas concentration. Additionally, it reveals the mechanism of air leakage around gas drainage boreholes. The simulation data are then compared with field gas drainage monitoring data to verify the reliability of the model. This verification serves as a basis for extraction regulation and control. The results demonstrate that during the later stages of extraction, the negative pressure decreases, causing a decline in gas concentration. Moreover, higher negative pressure leads to increased air inflow into the borehole, thereby reducing gas concentration. Consequently, selecting an appropriate negative pressure is crucial to improve pumping efficiency. The research findings hold significant guidance in achieving efficient gas mining.

Electrical Transport Characteristics of Vertical GaN Schottky-Barrier Diode in Reverse Bias and Its Numerical Simulation

We investigated the temperature-dependent reverse characteristics (JR-VR-T) of vertical GaN Schottky-barrier diodes with and without a fluorine-implanted edge termination (ET). To understand the device leakage mechanism, temperature-dependent characterizations were performed, and the observed reverse current was modeled through technology computer-aided design. Different levels of current were observed in both forward and reverse biases for the ET and non-ET devices, which suggested a change in the conduction mechanism for the observed leakages. The measured JR-VR-T characteristics of the non-edge-terminated device were successfully fitted in the entire temperature range with the phonon-assisted tunneling model, whereas for the edge-terminated device, the reverse characteristics were modeled by taking into account the emission of trapped electrons at a high temperature and field caused by Poole–Frenkel emission.

Flexible magnetoelectric PVDF–CoFe2O4 fiber films for self-powered energy harvesters

Integrating the concept of magnetoelectric in the mechanical energy harvesters through the magneto-mechano-electrical (MME) nanogenerators has been explored to realize the self-powered devices. The magnetoelectric interaction enabled the output performance of the MME nanogenerator under magnetic stimulus of the active components of the energy harvesters. In this perspective, we fabricated a flexible biomechanical and MME nanogenerator using PVDF/CoFe2O4 fibers composite films. CoFe2O4 fibers were synthesized by the electrospinning technique and the process parameters were optimized to achieve uniform and bead-free fibers. The structural and morphological properties were investigated through scanning electron microscopy (SEM), transmission electron microscopy (TEM), and atomic force microscopy (AFM). The structural and morphology revealed the fibers calcined at 800 °C with a heating rate of 2 °C/min produced bead-free continuous fibers with a fiber diameter of 210 nm with cubic spinel crystalline structure with a crystallite size of 34 nm. These highly crystalline fibers were used to fabricate PVDF/CoFe2O4 fibers composite films. The magnetoelectric behaviour of the films verified through polarization vs. electric field (P-E) loops under magnetic field. The leakage current density and mechanism of the composite films were investigated, and it was discovered that the mechanism was due to Schottky emission. Further the energy harvesting performance of the composite films were estimated where the nanogenerator achieved an output voltage of 13 V under biomechanical tapping force while the MME nanogenerator produced 3.5 V under a low frequency stray magnetic field of 6 Oe with a power density of 28 μW/m2.

Microfluidic investigation on asphaltene interfaces attempts to carbon sequestration and leakage: Oil-CO2 phase interaction characteristics at ultrahigh temperature and pressure

CO2 huff-n-puff is a potential approach to improve the oil displacement efficiency in the deep reservoirs, which can achieve carbon sequestration and efficient oil production, simultaneously. However, the fundamental understanding of carbon mass transport, sequestration and leakage mechanism in deep geological reservoirs at the microscopic pore scale is still ambiguous. In this work, we innovatively designed a precise CO2 huff-n-puff microfluidic experiment under ultrahigh temperature and pressure conditions (55 MPa, 115 °C) to study the microscopic mechanism of CO2 utilization, storage and leakage (CUSL) in pore scale. Moreover, we proposed the quantitative analysis method for oil-CO2 interaction behavior to explicit dissolution and extraction characteristics, pressure threshold and interface stability by introducing Pseudo-Color algorithm and relevant parameters such as dynamic oil swelling factor, contact angle and gray value. Then, the pore-scale dynamics of the fluid interaction mechanism during the soak and puff process were quantitatively characterized, corresponding to the carbon sequestration efficiency of crude oil continuously exposed to scCO2 and the leakage risk with step-down production, respectively. The experimental results indicate that during the huff process, the oil-CO2 phase behavior characteristics at 115 °C can be divided into swelling, immiscible extraction and miscible extraction regions, which are coordinately controlled by dissolution mechanism, capillary effect and vaporization mechanism. Moreover, ultrahigh temperature oil generally requires higher pressure to start extraction and miscibility (Pext = 6.38 and 15.96 MPa, MMP = 9.71 and 23.73 MPa, T = 50 and 115 °C, respectively), while the asphaltene precipitation pressure Pasp is lower. At ultrahigh temperatures, the oil-CO2 interaction also enters the contact angle fluctuation region in advance, and the morphology of asphaltene particles is single, fine and uniform. When the soaking time is 36 min, the non-extractable oil component gradually evolves into a carbon sequestration interface. During the subsequent puff process, the more stable the carbon sequestration interface in the smaller blind end, the lower the leakage risk, corresponding to the leakage pressure difference of up to 40.93 MPa. This work has important practical significance for deep resource extraction and CUSL industrial application.

Reverse Leakage Mechanism of Dislocation-Free GaN Vertical p-n Diodes

The reverse leakage mechanism of threading dislocation (TD)-free gallium nitride (GaN) vertical p-n diode was investigated in various temperature range, and it was compared with that of the p-n diode having a threading dislocation density (TDD) of around 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sup> cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-2</sup> . The reverse leakage current was increased markedly by increasing the temperature from 400 K, the dominant mechanism was explained by thermionic and Poole-Frenkel emissions for TD-free and high-TDD p-n diodes, respectively. At high temperatures and electric fields, the leakage current of the high TDD p-n diode showed 2 times higher than the TD-free p-n diode. These results indicate that the performance of vertical GaN devices, especially when employed at high temperatures and electric fields, can be enhanced by removing TDs.

Cell leakage mechanism and time kill studies on Staphylococcus aureus after exposure to ethanol leaf extract of Muntingia calabura L

Purpose: To determine the effect of the ethanol leaf extract of M. calabura (EEMC) on cell leakage and time-kill against S. aureus. &#x0D; Methods: The leaves were macerated with 96 % ethanol (1:8; w/v) for 27 h to produce EEMC. Chemical compounds of EEMC were analyzed using liquid chromatography with tandem mass spectrometry (LC-MS/MS). Various concentrations of EEMC (12.5; 25; 50; 100 mg/mL) were tested to determine the Minimum inhibitory concentration (MIC) and minimum bactericidal concentration (MBC) against S. aureus. Furthermore, EEMC was tested for its effect on cell leakage, changes in extracellular electrical conductivity, and time-kill against S. aureus. UV-spectrophotometer was used to test for leakages of nucleic acid, protein, DNA, and RNA, while atomic absorption spectrophotometer was used to evaluate leakage of potassium ion (K+).&#x0D; Results: The MIC and MBC of EEMC against S. aureus were 10 % w/v (100 mg/mL). The highest cell leakage occurred in S. aureus exposed to 2x MIC, with leakages of protein, DNA, RNA, and K+ reaching 137.79 ± 58.99, 2298 ± 263.26, 1839 ± 210.61 and 770.86 ± 40.11 μg/mL respectively. The EEMC (1x MBC and 1.5x MBC) killed S. aureus in 24 h. Analysis of LC-MS/MS of EEMC showed that flavonoids (48.33 %) followed by anthraquinones (16.10 %) were the major classes of compounds present in the extract.&#x0D; Conclusion: The ethanol leaf extract of M. calabura kills S. aureus by inducing cell leakage possibly due to flavonoids and anthraquinones contained in it. The extract should be further isolated and its active principles with potent antibacterial properties developed for therapeutic applications.