Electrical characterization of SOI pMOS device leakage

D Bosch,P Lheritier,F Guyader,S Joblot,F Ponthenier,J Lacord

doi:10.1016/j.sse.2023.108740

Electrical characterization of SOI pMOS device leakage

D Bosch, P Lheritier + Show 4 more

https://doi.org/10.1016/j.sse.2023.108740

Copy DOI

Journal: Solid State Electronics	Publication Date: Aug 23, 2023
Citations: 2

Affiliation: Université Grenoble Alpes, Atomic Energy and Alternative Energies Commission, CEA LETI, STMicroelectronics (France)

#Band-to-band Tunneling #Back Bias + Show 8 more

Abstract
Full-Text PDF
Similar Papers

Abstract

This work investigates Silicon-on-Insulator (SOI) pMOS leakage current. Temperature measurements indicates the superposition of two leakage mechanisms: band-to-band tunneling (BTBT) and Shockley-Read-Hall Field-Enhanced (SRHFE) generation recombination. Thanks to a dedicated low current measurement setup, the impact of device width (W), thickness (tsi) and polarization (back bias, drain and source) on leakage level is evaluated for both mechanisms.

Full Text