InP Nanowires Research Articles

Template-assisted vapour-liquid-solid growth of InP nanowires on (001) InP and Si substrates.

We report on the synthesis of vertical InP nanowire arrays on (001) InP and Si substrates using template-assisted vapour-liquid-solid growth. A thick silicon oxide layer was first deposited on the substrates. The samples were then patterned by electron beam lithography and deep dry etching through the oxide layer down to the substrate surface. Gold seed particles were subsequently deposited in the holes of the pattern by the use of pulse electrodeposition. The subsequent growth of nanowires by the vapour-liquid-solid method was guided towards the [001] direction by the patterned oxide template, and displayed a high growth yield with respect to the array of holes in the template. In order to confirm the versatility and robustness of the process, we have also demonstrated guided growth of InP nanowire p-n junctions and InP/InAs/InP nanowire heterostructures on (001) InP substrates. Our results show a promising route to monolithically integrate III-V nanowire heterostructure devices with commercially viable (001) silicon platforms.

Фотодинамика люминесценции гибридных наноструктур InP/InAsP/InP ННК, пассивированных слоем ТОРО-CdSe/ZnS КТ

The results of studies of the photodynamics of the excited state decay of a hybrid semiconductor nanostructure, which is an array of InP nanowires with InAsP nanoinsertions passivated with a layer of TOPO (trioctylphosphine oxide) containing colloidal CdSe/ZnS quantum dots, are presented. Time- and spectrally resolved measurement of photoluminescence InAsP nanoinsertions in the near infrared region at temperatures of 80 K and 293 K were made. The presence of a quasi-Langmuir layer of TOPO-CdSe/ZnS quantum dots on the surface of InP/InAsP/InP nanowires leads to an increase in the duration of radiative recombination and its dependence on temperature. It was found that the synthesized structure has a type-II heterojunction at the interface between the InAsP nanoinsertion and the InP volume. The influence of interfacial processes on increasing the duration of radiative recombination is discussed.

Operando Surface Characterization of InP Nanowire p-n Junctions.

We present an in-depth analysis of the surface band alignment and local potential distribution of InP nanowires containing a p–n junction using scanning probe and photoelectron microscopy techniques. The depletion region is localized to a 15 nm thin surface region by scanning tunneling spectroscopy and an electronic shift of up to 0.5 eV between the n- and p-doped nanowire segments was observed and confirmed by Kelvin probe force microscopy. Scanning photoelectron microscopy then allowed us to measure the intrinsic chemical shift of the In 3d, In 4d, and P 2p core level spectra along the nanowire and the effect of operating the nanowire diode in forward and reverse bias on these shifts. Thanks to the high-resolution techniques utilized, we observe fluctuations in the potential and chemical energy of the surface along the nanowire in great detail, exposing the sensitive nature of nanodevices to small scale structural variations.

Photovoltaic properties of InP NWs/p-Si heterostructure

The experimental and modelling results of the investigation of photovoltaic properties of the InP nanowires grown on p-Si substrate are presented. It is shown that InP 2D-layer between nanowires on Si is II-type heterojanction. The resulting structure exhibits an open-circuit voltage (Voc) of 0,37 V, a short-circuit current density (Jsc) of 10.6 mA/cm2, a fill factor (FF) of 0.61 and efficiency of 2.4% at 1 sun. The InP/p-Si structure can be applied as prototype for solar cells or the photosensitive component in an integrated circuit based on silicon technology.

Optical absorption enhancement in vertical InP nanowire random structures for photovoltaic applications

We have investigated the numerical method on optical properties of vertical InP nanowires with three types of random structures, i.e. random diameter, height, and position. It is found that light absorption in random structures is improved compared to their periodic structures. Also, enhancement of absorption in random position structure is slight while random diameter shows significant absorption enhancement, which achieves 10.4% improvement compared to the periodic structure. This is due to additional resonances, broadening of existing resonance, and lower optical reflection.

High Responsivity of InP/InAsP Nanowire Array Broadband Photodetectors Enhanced by Optical Gating.

High-performance photodetectors operating in the near-infrared (0.75-1.4 μm) and short-wave infrared (1.4-3.0 μm) portion of the electromagnetic spectrum are key components in many optical systems. Here, we report on a combined experimental and theoretical study of square millimeter array infrared photodetectors comprising 3 million n+-i-n+ InP nanowires grown by MOVPE from periodically ordered Au seed particles. The nominal i-segment, comprising 20 InAs0.40P0.60 quantum discs, was grown by use of an optimized Zn doping to compensate the nonintentional n-doping. The photodetectors exhibit bias- and power-dependent responsivities reaching record-high values of 250 A/W at 980 nm/20 nW and 990 A/W at 532 nm/60 nW, both at 3.5 V bias. Moreover, due to the embedded quantum discs, the photoresponse covers a broad spectral range from about 0.70 to 2.5 eV, in effect outperforming conventional single InGaAs detectors and dual Si/Ge detectors. The high responsivity, and related gain, results from a novel proposed photogating mechanism, induced by the complex charge carrier dynamics involving optical excitation and recombination in the quantum discs and interface traps, which reduces the electron transport barrier between the highly doped n+ contact and the i-segment. The experimental results obtained are in perfect agreement with the proposed theoretical model and represent a significant step forward toward understanding gain in nanoscale photodetectors and realization of commercially viable broadband photon detectors with ultrahigh gain.

Triboelectric current generation in InP

Energy harvesting is an area that presents the greatest potential for powering wireless low-energy electronics. Development of semiconductor-based energy harvesting is of interest. Herein we focus on studying two different energy harvesting mechanisms in indium phosphide. Piezoelectric harvesting was checked by bending vertical InP nanowires with conductive atomic force microscope (AFM) probe and simultaneously detecting current passing through the probe. No current pulses were observed that we associate with surface trapping of piezoinduced carriers. Triboelectric generation was studied by creating frictional contact between AFM tip and metal-dielectric-semiconductor (MIS) interface formed by InP layer covered with native oxide. Current peaks of 320 pA amplitude corresponding to the current density around 2.3 kA/m2 were observed under sliding reciprocating motion of the tip during AFM scanning. Achieved current density was higher than in polymer- and silicon-based triboelectric structures. The open-circuit voltage value exceeded 15 mV and the output electric power was 35 W/m2.

Anisotropies of the g-factor tensor and diamagnetic coefficient in crystal-phase quantum dots in InP nanowires

Crystal-phase low-dimensional structures offer great potential for the implementation of photonic devices of interest for quantum information processing. In this context, unveiling the fundamental parameters of the crystal phase structure is of much relevance for several applications. Here, we report on the anisotropy of the g-factor tensor and diamagnetic coefficient in wurtzite/zincblende (WZ/ZB) crystal-phase quantum dots (QDs) realized in single InP nanowires. The WZ and ZB alternating axial sections in the NWs are identified by high-angle annular dark-field scanning transmission electron microscopy. The electron (hole) g-factor tensor and the exciton diamagnetic coefficients in WZ/ZB crystal-phase QDs are determined through micro-photoluminescence measurements at low temperature (4.2 K) with different magnetic field configurations, and rationalized by invoking the spin-correlated orbital current model. Our work provides key parameters for band gap engineering and spin states control in crystal-phase low-dimensional structures in nanowires.

Strain-Mediated Bending of InP Nanowires through the Growth of an Asymmetric InAs Shell.

Controlling nanomaterial shape beyond its basic dimensionality is a concurrent challenge tackled by several growth and processing avenues. One of these is strain engineering of nanowires, implemented through the growth of asymmetrical heterostructures. Here, we report metal–organic molecular beam epitaxy of bent InP/InAs core/shell nanowires brought by precursor flow directionality in the growth chamber. We observe the increase of bending with decreased core diameter. We further analyze the composition of a single nanowire and show through supporting finite element simulations that strain accommodation following the lattice mismatch between InP and InAs dominates nanowire bending. The simulations show the interplay between material composition, shell thickness, and tapering in determining the bending. The simulation results are in good agreement with the experimental bending curvature, reproducing the radius of 4.3 µm (±10%), for the 2.3 µm long nanowire. The InP core of the bent heterostructure was found to be compressed at about 2%. This report provides evidence of shape control and strain engineering in nanostructures, specifically through the exchange of group-V materials in III–V nanowire growth.

Nonradiative Energy Transfer in Hybrid Nanostructures with Varied Dimensionality

A composite nanostructure based on quasi-one-dimensional InP nanowires with an InAsP nanoinsert, grown on a Si(111) substrate by the method of molecular-beam epitaxy, and CdSe/ZnS zero-dimensional colloidal quantum dots is reported for the first time. The nonradiative resonance energy transfer between components of the hybrid nanostructure, namely, between the colloidal quantum dots and the nanoinsert, is experimentally confirmed.

Combining Nanofocused X-Rays with Electrical Measurements at the NanoMAX Beamline

The advent of nanofocused X-ray beams has allowed the study of single nanocrystals and complete nanoscale devices in a nondestructive manner, using techniques such as scanning transmission X-ray microscopy (STXM), X-ray fluorescence (XRF) and X-ray diffraction (XRD). Further insight into semiconductor devices can be achieved by combining these techniques with simultaneous electrical measurements. Here, we present a system for electrical biasing and current measurement of single nanostructure devices, which has been developed for the NanoMAX beamline at the fourth-generation synchrotron, MAX IV, Sweden. The system was tested on single InP nanowire devices. The mechanical stability was sufficient to collect scanning XRD and XRF maps with a 50 nm diameter focus. The dark noise of the current measurement system was about 3 fA, which allowed fly scan measurements of X-ray beam induced current (XBIC) in single nanowire devices.

Wavelength-tunable InAsP quantum dots in InP nanowires

There is considerable interest in quantum dots incorporated in nanowires for nanolasers and quantum emitters. In this letter, we demonstrate single InAsP quantum dots embedded in InP nanowires grown by metalorganic vapor-phase epitaxy. Despite the abrupt change of growth conditions at the interface, InAsP quantum dots can be grown in pure wurtzite InP nanowires. We develop a model and analyze the effects of the thickness of InAsP quantum dots and the composition of As on the formation of dislocations. Furthermore, the InAsP/InP quantum dot nanowires show bright photoluminescence up to room temperature without any surface passivation. The emission from the quantum dots could be well tuned by adjusting the dot size either vertically or laterally. The study demonstrates the potential of this material system for optoelectronic applications.

Design Principles for Fabrication of InP-Based Radial Junction Nanowire Solar Cells Using an Electron Selective Contact

Nanowire solar cells hold several advantages over planar solar cells, such as reduced reflection, facile strain relaxation, extreme light trapping, increased defect tolerance, etc. However, because of their large surface-to-volume ratio, nanowires tend to have very low effective minority carrier lifetime. To overcome this issue, a radial junction solar cell was proposed. However, in experimental realization, the efficiency of a radial junction solar cell remains significantly lower than its axial counterpart. This is mainly because of the inability to simultaneously control the doping in both the core and the shell while maintaining low defect density at the interface. To overcome the above-mentioned issues, we propose and simulate a core–shell heterojunction solar cell using p-InP as a core material and ITO/ZnO as a shell material. Using finite-difference time-domain simulations, we show that use of an oxide coating over InP core can significantly increase the absorption in InP nanowire arrays, and for an optimized thickness of oxide layer, InP consumption can be reduced by as much as four folds without sacrificing the ideal short circuit current. In addition, our device simulation results show that even for a core minority carrier lifetime of 50 ps, an efficiency of 23% can be obtained if both core and shell can be heavily doped while maintaining an interface recombination velocity of less than 104 cm/s. Finally, we discuss how the proposed device structure can reduce the fabrication complexities related to epitaxial homojunction/heterojunction core–shell solar cell structure while achieving a high efficiency under optimized conditions.

High performance transistors and photodetectors based on self-catalyzed zinc-blende InP nanowires

InP nanowires are an important material for nanoscale electronic and optical devices. However, the crystal phase mixing and stacking faults severely degrade the device's performance. Here, we demonstrate high performance field-effect transistors and photodetectors based on high-quality InP nanowires. The ⟨110⟩-oriented InP nanowires, which are formed by spontaneous kinking from the original ⟨111⟩ nanowire roots, exhibit a stacking-faults-free zinc blende crystal structure. Based on the high-quality nanowire, the field-effect transistor exhibits a high electron mobility of 1438 cm2 V−1 s−1, much higher than that with stacking faults. A high responsivity of 5495 A/W is obtained from the photodetector, among the highest values reported for InP nanowire photodetectors. Moreover, the response/recovery time of the device is only 0.6/2.2 ms, 2–3 orders of magnitude shorter than other InP nanowire photodetectors. The high crystal quality and excellent electrical and optical properties make the zinc blende ⟨110⟩ InP nanowire a promising candidate for high performance electronic and optoelectronic devices.

Common nonlinear features and spin-orbit coupling effects in the Zeeman splitting of novel wurtzite materials

The response of semiconductor materials to external magnetic fields is a reliable approach to probe intrinsic electronic and spin-dependent properties. In this study, we investigate the common Zeeman splitting features of novel wurtzite materials, namely, InP, InAs, and GaAs. We present values for the effective $g$ factors of different energy bands and show that spin-orbit coupling effects, responsible for the spin splittings, also have noticeable contributions to the $g$ factors. Within the Landau level picture, we show that the nonlinear Zeeman splitting recently explained in magnetophotoluminescence experiments for InP nanowires by D. Tedeschi et al. [Phys. Rev. B 99, 161204 (2019)] is also present in InAs, GaAs, and even the conventional GaN. Such nonlinear features stem from the peculiar coupling of the A and B valence bands as a consequence of the interplay between the wurtzite crystal symmetry and the breaking of time-reversal symmetry by the external magnetic field. Moreover, we develop an analytical model to describe the experimental nonlinear Zeeman splitting and apply it to InP and GaAs data. Extrapolating our fitted results, we found that the Zeeman splitting of InP reaches a maximum value, which is a prediction that could be probed at higher magnetic fields.

On‐Chip Integration of Single Photon Sources via Evanescent Coupling of Tapered Nanowires to SiN Waveguides

AbstractA method to integrate nanowire‐based quantum dot single photon sources on‐chip using evanescent coupling is demonstrated. By deterministically placing an appropriately tapered III‐V nanowire, containing a single quantum dot, on top of a silicon‐based ridge waveguide, the quantum dot emission directed toward the taper can be transferred to the ridge waveguide with calculated efficiencies close to 100%. As the evanescent coupling is bidirectional, the source can be optically pumped in both free‐space and through the ridge waveguide. The latter configuration paves the way toward a self‐contained, all‐fiber, plug‐and‐play solution for applications requiring a bright on‐demand single photon source. Using InAsP quantum dots embedded in InP nanowire waveguides, coupling efficiencies to a SiN ridge waveguide of 74% with a single photon purity of 97% are demonstrated. The technique to demonstrate deterministic placement of single quantum emitters onto pre‐fabricated waveguides is used, an important step toward the fabrication of complex quantum photonic circuits.

Unusual spin properties of InP wurtzite nanowires revealed by Zeeman splitting spectroscopy

In this study, we present a complete experimental and theoretical investigation of the fundamental exciton Zeeman splitting in wurtzite InP nanowires. We determined the exciton gyromagnetic factor, $g_{exc}$, by magneto-photoluminescence spectroscopy using magnetic fields up to 29 T. We found that $g_{exc}$ is strongly anisotropic with values differing in excess of 50\% between the magnetic field oriented parallel and perpendicular to the nanowire long axis. Furthermore, for magnetic fields oriented along the nanowire axis, $g_{exc}$ is nearly three times larger than in bulk zincblende InP and it shows a marked sublinear dependence on the magnetic field, a common feature to other non-nitride III-V wurtzite nanowires but not properly understood. Remarkably, this nonlinearity originates from only one Zeeman branch characterized by a specific type of light polarization. All the experimental findings are modeled theoretically by a robust approach combining the $k \cdot p$ method with the envelope function approximation and including the electron-hole interaction. We revealed that the nonlinear features arise due to the coupling between Landau levels pertaining to the A (heavy-hole like) and B (light-hole like) valence bands of the wurtzite crystal structure. This general behavior is particularly relevant for the understanding of the spin properties of several wurtzite nanowires that host the set for the observation of topological phases potentially at the base of quantum computing platforms.

Life cycle assessment of emerging technologies at the lab scale: The case of nanowire‐based solar cells

AbstractNanomaterials are expected to play an important role in the development of sustainable products. The use of nanomaterials in solar cells has the potential to increase their conversion efficiency. In this study, we performed a life cycle assessment (LCA) for an emerging nanowire‐based solar technology. Two lab‐scale manufacturing routes for the production of nanowire‐based solar cells have been compared—the direct growth of GaInP nanowires on silicon substrate and the growth of InP nanowires on native substrate, peel off, and transfer to silicon substrate. The analysis revealed critical raw materials and processes of the current lab‐scale manufacturing routes such as the use of trifluoromethane (CHF3), gold, and an InP wafer and a stamp, which are used and discarded. The environmental performance of the two production routes under different scenarios has been assessed. The scenarios include the use of an alternative process to reduce the gold requirements—electroplating instead of metallization, recovery of gold, and reuse of the InP wafer and the stamp. A number of suggestions, based on the LCA results—including minimization of the use of gold and further exploration for upscaling of the electroplating process, the increase in the lifetimes of the wafer and the stamp, and the use of fluorine‐free etching materials—have been communicated to the researchers in order to improve the environmental performance of the technology. Finally, the usefulness and limitations of lab‐scale LCA as a tool to guide the sustainable development of emerging technologies are discussed.

Simultaneous Growth of Pure Wurtzite and Zinc Blende Nanowires.

The opportunity to engineer III-V nanowires in wurtzite and zinc blende crystal structure allows for exploring properties not conventionally available in the bulk form as well as opening the opportunity for use of additional degrees of freedom in device fabrication. However, the fundamental understanding of the nature of polytypism in III-V nanowire growth is still lacking key ingredients to be able to connect the results of modeling and experiments. Here we show InP nanowires of both pure wurtzite and pure zinc blende grown simultaneously on the same InP [100]-oriented substrate. We find wurtzite nanowires to grow along [Formula: see text] and zinc blende counterparts along [Formula: see text]. Further, we discuss the nucleation, growth, and polytypism of our nanowires against the background of existing theory. Our results demonstrate, first, that the crystal growth conditions for wurtzite and zinc blende nanowire growth are not mutually exclusive and, second, that the interface energies predominantly determine the crystal structure of the nanowires.

Analysis of structural distortion in Eshelby twisted InP nanowires by scanning precession electron diffraction

Transmission electron microscopes (TEM) are widely used in nanotechnology research. However, it is still challenging to characterize nanoscale objects; their small size coupled with dynamical diffraction makes interpreting real- or reciprocal-space data difficult. Scanning precession electron diffraction ((S)PED) represents an invaluable contribution, reducing the dynamical contributions to the diffraction pattern at high spatial resolution. Here a detailed analysis of wurtzite InP nanowires (30–40 nm in diameter) containing a screw dislocation and an associated wire lattice torsion is presented. It has been possible to characterize the dislocation with great detail (Burgers and line vector, handedness). Through careful measurement of the strain field and comparison with dynamical electron diffraction simulations, this was found to be compatible with a Burgers vector modulus equal to one hexagonal lattice cell parameter despite the observed crystal rotation rate being larger (ca. 20%) than that predicted by classical elastic theory for the nominal wire diameter. These findings corroborate the importance of the (S)PED technique for characterizing nanoscale materials.