Abstract
There is considerable interest in quantum dots incorporated in nanowires for nanolasers and quantum emitters. In this letter, we demonstrate single InAsP quantum dots embedded in InP nanowires grown by metalorganic vapor-phase epitaxy. Despite the abrupt change of growth conditions at the interface, InAsP quantum dots can be grown in pure wurtzite InP nanowires. We develop a model and analyze the effects of the thickness of InAsP quantum dots and the composition of As on the formation of dislocations. Furthermore, the InAsP/InP quantum dot nanowires show bright photoluminescence up to room temperature without any surface passivation. The emission from the quantum dots could be well tuned by adjusting the dot size either vertically or laterally. The study demonstrates the potential of this material system for optoelectronic applications.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
