Abstract
The experimental and modelling results of the investigation of photovoltaic properties of the InP nanowires grown on p-Si substrate are presented. It is shown that InP 2D-layer between nanowires on Si is II-type heterojanction. The resulting structure exhibits an open-circuit voltage (Voc) of 0,37 V, a short-circuit current density (Jsc) of 10.6 mA/cm2, a fill factor (FF) of 0.61 and efficiency of 2.4% at 1 sun. The InP/p-Si structure can be applied as prototype for solar cells or the photosensitive component in an integrated circuit based on silicon technology.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
