Despite the great interest to the resistively switching devices (RS) as the potential candidates to solve the information process challenges arising so far, there is still a lack of the simple way to visualize the structural peculiarities underlying the RS device performance. In this work, we introduce and explain the exceptional sensitivity of the electron beam-induced current (EBIC) technique, realized in the scanning electron microscope, to the essential steps of Pt/TaOx/Ta devices operation with filamentary RS. We showed the possibility of visualizing conducting filaments (CFs) and monitoring changes in their number and sizes during the operation of Pt/TaOx/Ta memory cells. By EBIC, we confirmed the multi-filamentary mechanism of RS in the Pt/TaOx/Ta cells and established the patterns of CFs formation in the devices with the cross-bars topology, which may be helpful for the understanding of the performance peculiarities of the high-density cross-bar memory arrays.
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