Abstract
In this letter, we experimentally demonstrated a novel resistive device with a hybrid switching mode that can be alternated between volatile threshold switching and non-volatile resistive switching. The device consists of dual-functional layers VO2 /HfO2 sandwiched by symmetrical TiN electrodes. A >20 unified ratio for selectivity and memory window is obtained. Owing to the stable resistive behavior of HfO2 and insulator-metal transition of VO2, the device shows excellent uniform switching parameters in both switching modes with a high on-state current density (1E4 A/cm2) and fast switching/recovery speed (< 30 ns). This self-selective resistive memory is of great potential in the high-density crossbar array, particularly for the future 3D-Vertical resistive random access memory (RRAM) integration.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callSimilar Papers
More From: IEEE Electron Device Letters
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
