Abstract
Silver telluride (AgxTe) is a member of the chalcogenide family that comprises materials extensively used as solid electrolytes. Because of its high-ionic conductivity, low-optical bandgap, and excellent thermoelectric properties, AgxTe has been studied in many research fields, including optoelectronics and energy harvesting. Herein, AgxTe is proposed as the active channel for resistive random access memory (RRAM) showing complementary resistive switching (CRS) characteristics. AgxTe-based RRAM devices with an Ag/AgxTe/Au structure are fabricated on a glass substrate. AgxTe nanoparticles are synthesized using the colloidal method, and AgxTe thin films are prepared via spin coating of the synthesized nanoparticles dispersed in deionized water. The fabricated AgxTe-based RRAM device exhibits CRS characteristics without any additional built-in selectors or antiserial arrangement. This is attributed to the formation of the inversion of CF geometry and allows the fabrication of high-density crossbar arrays. The AgxTe RRAM device annealed at 200 °C exhibits a resistance on/off ratio of approximately 102 as well as stable retention (∼104 s) and endurance (∼103 cycles). This investigation proposes a new application of AgxTe, as a solid electrolyte, and a new strategy for the development of high-density crossbar RRAM architectures, for the first time.
Published Version
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