Abstract
A graphite-based RRAM device with a self-rectifying characteristic named “non-linearity (NL)” is developed for a high-density crossbar array for in-memory computing with low power and high scalability. Meanwhile, the reprogrammable functions are presented in self-selected RRAM as a promising candidate for one-time programmable (OTP) in the emerging memory-embedded applications such as security, system-on-chip (SoC), and Internet of Things (IoT).
Highlights
In the era of computational and information technologies renovation such as artificial intelligence (AI), Internet of Things (IoT), edge computing, and in-memory computing paradigm, the emerging memory technology with high-density storage, large bandwidth, and low power consumption has been rapidly developed over decades
Despite the simple structure of resistive random-access memory (RRAM) being beneficial for the high-density memory application, sneak-path currents (SPCs) in the crossbar array resulting in crosstalk have attracted considerable attention
Platinum of 165 nm was deposited as top electrodes, followed by the lift-off process for RRAM devices
Summary
In the era of computational and information technologies renovation such as artificial intelligence (AI), Internet of Things (IoT), edge computing, and in-memory computing paradigm, the emerging memory technology with high-density storage, large bandwidth, and low power consumption has been rapidly developed over decades. The interference currents from neighboring cells caused the read error and false programming and are usually resolved by integration of a selection device, for example, transistor, diode, and selector, called “1T-1R” or “1S-1R” configurations (Sungho Kim et al, 2014; Sharma et al, 2015; Lim et al, 2016; Chen et al, 2017) This approach leads to high cost, fabrication complexity, energy overhead, and hindered scalability. Critical for recent applications, namely, security for data storage, security, Internet of Things, and modern system-on-chip (Kulkarni et al, 2021; Liu et al, 2018; Okuno et al, 2020; Shamsoshoara et al, 2020; Yang et al, 2020) This results in challenges, such as, increase in the fuse bit counts, overall area, large power consumption, and reliability. In this work, selfrectified graphite-based reprogrammable one-time programmable (RS-OTP) memory is presented for highperformance computing and embedded applications
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