Voltage-gated Research Articles

Nonlinear Hall Coefficient in Films of a Three-Dimensional Topological Insulator

The magnetoresistance and the Hall effect in transistor structures fabricated on films of the three-dimensional topological insulator (Bi,Sb)2(Te,Se)3 are studied. It is shown that the negative magnetoresistance at low magnetic field is described in terms of quantum corrections to the conductivity. The magnitude of these corrections depends on the gate voltage and increases when approaching the charge neutrality point. The Hall coefficient RH is nonlinear at low magnetic fields for any gate voltage, and the RH nonlinearity is the most pronounced at high negative gate voltages. At high fields, the slope of the magnetic field dependence of the Hall coefficient changes its sign at some gate voltage.

Electric tuning of plasmonic resonances in ultrathin gold nanoribbon arrays

Ultrathin plasmonic nanostructures offer an unparalleled opportunity for the study of light–matter interactions at the nanoscale and realization of compact nanophotonic devices. In this study, we introduce an ultrathin gold nanoribbon array and demonstrate an electric approach to actively tuning its plasmonic resonance, which leveraging the extreme light confinement capability in the ultrathin plasmonic nanostructure and a robust nanoscale electro-optical effect in indium tin oxide. Optimizing the design (to a total thickness as small as 12 nm for a 2-nm-thick gold nanoribbon array), we numerically demonstrate a spectral shift in the plasmonic resonance up to 36 nm along with an approximately 16% change in the transmission at a gate voltage below 1.7 V at the wavelength of 1.47 μm. This work presents progress towards electric tuning of plasmonic resonances in ultrathin metallic nanostructures for various applications including surface-enhanced spectroscopy, spontaneous emission enhancement, and optical modulation.

Analysis on effect of hot-carrier-induced degradation of NPT-IGBT

In this paper we present measurement results of hot-carrier-induced degradation of NPT-IGBT under the condition of voltage applied on its collector.The effect of hot carriers on NPT-IGBT is investigated in three ways: stress test measurement according to the gate voltage under the voltage of 400 V applied, TCAD (Tsuprem4 and MEDICI) simulation and electric charge pumping test measurement. The experimental results confirm that the proposed structure of NPT-IGBT has sustainable characteristics and enables the hot-carrier-induced degradation to be effectively optimized in order to guarantee the stability of the device.

A developmental neurotoxicity adverse outcome pathway (DNT-AOP) with voltage gate sodium channel (VGSC) inhibition as a molecular initiating event (MiE).

The adverse outcome pathway (AOP) framework serves as a practical tool for organising scientific knowledge that can be used to infer cause-effect relationships between stressor events and toxicity outcomes in intact organisms. However, a major challenge in the broader application of the AOP concept within regulatory toxicology is the development of a robust AOPs that can withstand peer review and acceptance. This is mainly due to the considerable amount of work required to substantiate the modular units of a complete AOP, which can take years from inception to completion. The methodology used here consisted of an initial assessment of a single chemical hazard using the Integrated Approach to Testing and Assessment (IATA) framework. An evidence-based approach was then used to gather empirical evidence combining systematic literature review methods with expert knowledge to ensure the effectiveness of the AOP development methodology. The structured framework used assured transparency, objectivity and comprehensiveness, and included expert knowledge elicitation for the evaluation of key event relationships (KERs). This stepwise approach led to the development of an AOP that begins with binding of chemicals to Voltage Gate Sodium Channels (VGSC/Nav) during mammalian development leading to adverse consequences in neurodevelopment evidenced as deficits in cognitive functions. Disruption of the formation of precise neural circuits by alterations in VGSC kinetics during the perinatal stages of brain development may also underlie neurodevelopmental disorders. Gaps in our understanding include the specific critical developmental windows and the quantitative relationship of binding to VGSC and subsequent disruption and cognitive function. Despite the limited quantitative information at all KER levels, regulatory applications of this AOP for DNT assessment have been identified.

Optoelectronic Neuromorphic Logic Memory Device Based on Ga2O3/MoS2 Van der Waals Heterostructure with High Rectification and On/Off Ratios

AbstractIt is crucial to develop advanced optoelectronic devices that incorporate multiple functions, including sensing, storage, and computing, which is considered at the forefront of semiconductor optoelectronics to meet emerging functional diversification. In this study, by stacking the n‐type Ga2O3 with the n‐type MoS2 flakes, a Ga2O3/MoS2 heterostructure optoelectronic device with high rectification ratio of ≈105 and on/off ratio of ≈108 is fabricated, which achieves high detectivity of 1.34 × 109 Jones and high responsivity of 28.92 mA/W. More importantly, the Ga2O3/MoS2 heterostructure device shows potential ability to integrate sensing and memorizing, simultaneously, which can be used as artificial neuromorphic synaptic. The device exhibits excellent photo‐induced synaptic functions including short‐term plasticity, long‐term plasticity, and paired‐pulse facilitation, realizing the ability to couple light and electrical signals by Pavlovian associative learning. At last, the device also demonstrates the information processing ability to act as optoelectronic logic gate AND by synergistically regulating the light on/off states and gate voltage. The research introduces an innovative strategy for the development of next‐generation optoelectronic devices which are highly integrated with sensing, memory, and logic processing functions, demonstrating great application prospects in constructing an efficient artificial neuromorphic visual and logic systems.

Spin-filtering properties of topological structures based on stanene and bismuthene nanoribbons with one edge magnetism

The transport properties of spin filters based on two-dimensional magnetic topological insulators (TI) with magnetism at one edge are theoretically studied. The non-equilibrium-Green’s-function (NEGF) formalism based on density functional theory (DFT) derived Hamiltonian is used to study the one-way helical edge states in these structures. We investigated the electronic and magnetic properties of stanene and bismuthene nanoribbons with various metal edge modifications. Our DFT simulations predict the formation of one-way helical edge states in stanene nanoribbons with asymmetric edge passivation. Our results suggest that the spin filtering properties of such structures outperform a comparable spin filter based on spin-polarized quantum-anomalous-Hall effect, as it bypasses a need for a strict interplay of magnetism, topology, and a large electric field (around 2 V gate voltage difference).

Novel solution-gated transistor sensor-based SnO2 epitaxial thin films grown by pulsed laser deposition for nitrite detection.

A solution-gate controlled thin-film transistor with SnO2 epitaxial thin films (SnO2-SGTFT) is successfully utilized for highly sensitive detection of nitrite. The SnO2 films are deposited as channel materials on a c-plane sapphire (c-Al2O3) substrate through pulsed laser deposition (PLD), with superior crystal quality and out-of-plane atomic ordering. PtAu NPs/rGO nanocomposites are electrodeposited on agold electrode to function as a transistor gate to further enhance the nitrite catalytic performance of thedevice. The change in effective gate voltage due to the electrooxidation of nitrite on the gate electrode is the primary sensing mechanism of the device. Based on the inherent amplification effect of transistors, the superior electrical properties of SnO2, and the high electrocatalytic activity of PtAu NPs/rGO, the SnO2-SGTFT sensor has a low detection limit of 0.1nM and a wide linear detection range of 0.1nM ~ 50mM at VGS = 1.0V. Furthermore, the sensor has excellent characteristics such as rapid response time, selectivity, and stability. The practicability of the device has been confirmed by the quantitative detection of nitrite in natural lake water. SnO2 epitaxial films grown by PLD provide a simple and efficient way to fabricate nitrite SnO2-SGTFT sensors in environmental monitoring and food safety, among others. It also provides a reference for the construction of other high-performance thin-film transistor sensors.

Multi-frequency and multi-functional optical switch based on dual plasmon-induced transparency

Research into multi-frequency and multi-functional optical switches for complex applications is pioneering territory. By employing a single-layer structure comprising three distinct graphene strips, we successfully created a dual-PIT effect through the destructive interference among two bright modes and a dark mode. The numerical simulations were corroborated by coupled mode theory, reflecting a high degree of consistency between the theory and the simulations. Remarkably, the modulation of the Fermi level in graphene metamaterials through gate voltage enabled the realization of asynchronous optical switches capable of operating at six, five, four, and three frequencies. Notably, the six-frequency switch exhibited an impressive modulation depth of 88.54% and an insertion loss of just 0.15 dB, highlighting its superior performance. This study lays a solid foundation for future multi-frequency and multi-functional optical switch designs, offering significant implications and practical applications.

Characteristics of Carbon Nanotube Cold Cathode Triode Electron Gun Driven by MOSFET Working at Subthreshold Region.

The carbon nanotube cold cathode has important applications in the X-ray source, microwave tube, neutralizer, etc. In this study, the characteristics of carbon nanotube (CNT) electron gun in series with metal-oxide-semiconductor field-effect transistor (MOSFET) were studied. CNTs were prepared on a stainless steel substrate by chemical vapor deposition and assembled with a mesh gate to form an electron gun. The anode current of the electron gun can be accurately regulated by precisely controlling the MOSFET gate voltage in the subthreshold region from 1 to 40 µA. The current stability measurements show the cathode current fluctuation was 0.87% under 10 h continuous operation, and the corresponding anode current fluctuation was 2.3%. The result has demonstrated that the MOSFET can be applied for the precise control of the CNT electron gun and greatly improve current stability.

Analytical Photoresponses of Gated Nanowire Photoconductors.

Low-dimensional photoconductors have extraordinarily high photoresponse and gain, which can be modulated by gate voltages as shown in literature. However, the physics of gate modulation remains elusive. In this work, the physics of gate modulation in silicon nanowire photoconductors with the analytical photoresponse equations is investigated. It is found that the impact of gate voltage varies vastly for nanowires with different size. For the wide nanowires that cannot be pinched off by high gate voltage, it is found that the photoresponses are enhanced by at least one order of magnitude due to the gate-induced electric passivation. For narrow nanowires that starts with a pinched-off channel, the gate voltage has no electric passivation effect but increases the potential barrier between source and drain, resulting in a decrease in dark and photocurrent. For the nanowires with an intermediate size, the channel is continuous but can be pinched off by a high gate voltage. The photoresponsivity and photodetectivity is maximized during the transition from the continuous channel to the pinched-off one. This work provides important insights on how to design high-performance photoconductors.

High-Performance Gate-Controlled Superconducting Switches: Large Output Voltage and Reproducibility.

Logic circuits consist of devices that can be controlled between two distinct states. The recent demonstration that a superconducting current flowing in a constriction can be controlled via a gate voltage (VG)─gate-controlled supercurrent (GCS)─can lead to superconducting logic with better performance than existing logics. However, before such logic is developed, high reproducibility in the functioning of GCS devices and optimization of their performance must be achieved. Here, we report an investigation of gated Nb devices showing GCS with very high reproducibility. Based on the investigation of a statistically significant number of devices, we demonstrate that the GCS is independent of the constriction width, in contrast with previous reports, and confirm a strong correlation between the GCS and the leakage current (Ileak) induced by VG. We also achieve a voltage output in our devices larger than the typical values reported to date by at least 1 order of magnitude, which is relevant for the future interconnection of devices, and show that Ileak can be used as a tool to modulate the operational VG of devices on a SiO2 substrates. These results altogether represent an important step forward toward the optimization of reproducibility and performance of GCS devices, and the future development of a GCS-based logic.

Molecule Engineering Metal-Organic Framework-Based Organic Photoelectrochemical Transistor Sensor for Ultrasensitive Bilirubin Detection.

The functionalization of metal-organic frameworks (MOFs) with organic small molecules by in situ postsynthetic modification has garnered considerable attention. However, the precise engineering of recognition sites using this method remains rarely explored in optically controlled bioelectronics. Herein, employing the Schiff base reaction to embed the small molecule (THBA) into a Zr-MOF, we fabricated a hydroxyl-rich MOF on the surface of titanium dioxide nanorod arrays (U6H@TiO2 NRs) to develop light-sensitive gate electrodes with tailored recognition capabilities. The U6H@TiO2 NR gate electrodes were integrated into organic photoelectrochemical transistor (OPECT) sensing systems to tailor a sensitive device for bilirubin (I-Bil) detection. In the presence of I-Bil, coordination effects, hydrogen bonding, and π-π interactions facilitated strong binding between U6H@TiO2 NRs and the target I-Bil. The electron-donating property of I-Bil influenced the gate voltage, enabling precise control of the channel status and modulation of the channel current. The OPECT device exhibited exceptional analytical performance toward I-Bil with wide linearity ranging from 1 × 10-16 to 1 × 10-9 M and a low limit detection of 0.022 fM. Leveraging the versatility of small molecules for boosting the functionalization of materials, this work demonstrates the great potential of the small molecule family for OPECT bioanalysis and holds promise for the advancement of OPECT sensors.

High performance ambipolar response photodetectors based on ReS2/PdSe2 van der Waals heterostructures

Anomalous negative photoresponse in a photodetector where the current is reduced under light illumination holds great potential in the application of next-generation novel and multifunctional optoelectronic devices. Until now, the figure of merits for negative photodetectors, such as responsivity and response speed, still exhibit unsatisfactory performance when compared to their positive counterparts. In this work, an unique gate voltage-dependent ambipolar-response photodetector based on the ReS2/PdSe2 heterostructure with excellent characteristics are prepared and investigated systematically. The evolution for concentration of hole in PdSe2 by gate voltage and the trap states existed at the surface and interface play a dominant role in the transition of negative to positive response. The negative photoresponse performances in terms of responsivity, external quantum efficiency (EQE), and response speed under 638 nm light illumination, are as high as about 532 A/W, 105%, and as fast as 7.9/8.7 µs, respectively. Meanwhile, the corresponding values of the positive response also reach to ∼10.5 A/W, ∼2069 %, and ∼30 µs, respectively, demonstrating the superiority of this heterostructure at ambipolar response. In addition, a similar phenomenon is also observed at the near-infrared region (980 nm). The discovery of these results signifies a pronounced breakthrough in the field of ambipolar photodetectors, thereby paving the way for future advancements in optoelectronic applications.

Fabrication Techniques for a Tuneable Room Temperature Hybrid Single-electron Transistor and Field-effect Transistor

Hybrid room-temperature (RT) silicon single-electron – field effect transistors (SET-FETs) provide a means to switch between ‘classical’, high current FET, and low-power SET operation, using a gate voltage. While operating as a SET, charge on a silicon quantum dot (QD) within the current channel, can be controlled at the one-electron level using the Coulomb blockade effect. This paper investigates nanofabrication methods for sub-10 nm ‘fin’ channel hybrid RT SET-FETs, and their influence on the energy band diagram, and formation of tunnel barriers and QDs, along the channel. Devices are fabricated in heavily n-doped SOI material using electron beam lithography, with thermal oxidation to reduce the as-defined fin width. Effective channel dimensions, following oxidation and excluding Si/SiO2 interface dopant deactivation, are ∼2.4 nm × 32 nm × 20 nm. Dopant disorder, fin width variation at the nanometre scale, and quantum confinement effects are considered as mechanisms for the formation of tunnel barriers and QDs, with dopant disorder the most likely reason. Arrhenius plots of Ids vs. 1/T allow extraction of a potential barrier energy ∼0.2 eV along the fin channel. For 180devices fabricated on four chips, 37% show RT SET-FET operation, ∼3 times higher than the corresponding yield observed in previous work on point-contact silicon SETs.

Josephson Diode Effect in Parallel-Coupled Double-Quantum Dots Connected to Unalike Majorana Nanowires.

We study theoretically the Josephson diode effect (JDE) when realized in a system composed of parallel-coupled double-quantum dots (DQDs) sandwiched between two semiconductor nanowires deposited on an s-wave superconductor surface. Due to the combined effects of proximity-induced superconductivity, strong Rashba spin-orbit interaction, and the Zeeman splitting inside the nanowires, a pair of Majorana bound states (MBSs) may possibly emerge at opposite ends of each nanowire. Different phase factors arising from the superconductor substrate can be generated in the coupling amplitudes between the DQDs and MBSs prepared at the left and right nanowires, and this will result in the Josephson current. We find that the critical Josephson currents in positive and negative directions are different from each other in amplitude within an oscillation period with respect to the magnetic flux penetrating through the system, a phenomenon known as the JDE. It arises from the quantum interference effect in this double-path device, and it can hardly occur in the system of one QD coupled to MBSs. Our results also show that the diode efficiency can reach up to 50%, but this depends on the overlap amplitude between the MBSs, as well as the energy levels of the DQDs adjustable by gate voltages. The present model is realizable within current nanofabrication technologies and may find practical use in the interdisciplinary field of Majorana and Josephson physics.

Influence of stop and gate voltage on resistive switching of 1T1R HfO2-based memristors, a modeling and variability analysis

Memristive devices, particularly resistive random access memory (RRAM) cells based on hafnium oxide (HfO₂) dielectrics, exhibit promising characteristics for a wide range of applications. In spite of their potential, issues related to intrinsic variability and the need for precise simulation tools and modeling methods remain a medium-term hurdle. This study addresses these challenges by investigating the resistive switching (RS) behavior of different 1T1R HfO₂-based memristive devices under various experimental conditions. Through a comprehensive experimental analysis, we extract RS parameters using different numerical techniques to understand the cycle-to-cycle (C2C) and device-to-device (D2D) variability. Additionally, we employ advanced simulation methodologies, including circuit breaker-based 3D simulation, to shed light on our experimental findings and provide a theoretical framework to disentangle the switching phenomena. Our results offer valuable insights into the RS mechanisms and variability, contributing to the improvement of robust parameter extraction methods, which are essential for the industrial application of memristive devices.

A mixer architecture using GaN-based split-gate nanowire transistor

Frequency mixer is an essential block in radio-frequency signal processing for frequency translation and phase comparison. The most common mixers are fabricated using passive elements which suffer from significant conversion loss and low isolation. Mixers using active devices are used less frequently and rather less matured on GaN technology. Here, we demonstrate a mixer based on GaN split-gate nanowire transistor, allowing low conversion loss and high isolation. A constriction is formed by electrostatic modulation of the effective gate width. The threshold voltage of the transistor is modified by one of the gate voltages through the width variation, while the other gate voltage biases the transistor in the saturation region. The nonlinear dependency of the transistor characteristics on the two gate voltages facilitates frequency translation. The mixing characteristics of this architecture are verified both experimentally and theoretically. The output power spectral density peaks at the difference frequency with a minimal conversion loss. Extremely high isolation is measured using three-port S-parameter measurements. The proposed architecture shows multiple benefits, additionally facilitating monolithic mixers on the GaN platform.

Enhancement of Synaptic Performance through Synergistic Indium Tungsten Oxide-Based Electric-Double-Layer and Electrochemical Doping Mechanisms

This study investigated the potential of indium tungsten oxide (IWO) channel-based inorganic electrolyte transistors as synaptic devices. We comparatively analyzed the electrical characteristics of indium gallium zinc oxide (IGZO) and IWO channels using phosphosilicate glass (PSG)-based electrolyte transistors, focusing on the effects of electric-double-layer (EDL) and electrochemical doping. The results showed the superior current retention characteristics of the IWO channel compared to the IGZO channel. To validate these findings, we compared the DC bias characteristics of SiO2-based field-effect transistors (FETs) with IGZO and IWO channels. Furthermore, by examining the transfer curve characteristics under various gate voltage (VG) sweep ranges for PSG transistors based on IGZO and IWO channels, we confirmed the reliability of the proposed mechanisms. Our results demonstrated the superior short-term plasticity of the IWO channel at VG = 1 V due to EDL operation, as confirmed by excitatory post-synaptic current measurements under pre-synaptic conditions. Additionally, we observed superior long-term plasticity at VG ≥ 2 V due to proton doping. Finally, the IWO channel-based FETs achieved a 92% recognition rate in pattern recognition simulations at VG = 4 V. IWO channel-based inorganic electrolyte transistors, therefore, have remarkable applicability in neuromorphic devices.

Study on Single Event Effects of Enhanced GaN HEMT Devices under Various Conditions.

GaN HEMT devices are sensitive to the single event effect (SEE) caused by heavy ions, and their reliability affects the safe use of space equipment. In this work, a Ge ion (LET = 37 MeV·cm2/mg) and Bi ion (LET = 98 MeV·cm2/mg) were used to irradiate Cascode GaN power devices by heavy ion accelerator experimental device. The differences of SEE under three conditions: pre-applied electrical stress, different LET values, and gate voltages are studied, and the related damage mechanism is discussed. The experimental results show that the pre-application of electrical stress before radiation leads to an electron de-trapping effect, generating defects within the GaN device. These defects will assist in charge collection so that the drain leakage current of the device will be enhanced. The higher the LET value, the more electron-hole pairs are ionized. Therefore, the charge collected by the drain increases, and the burn-out voltage advances. In the off state, the more negative the gate voltage, the higher the drain voltage of the GaN HEMT device, and the more serious the back-channel effect. This study provides an important theoretical basis for the reliability of GaN power devices in radiation environments.

Ultra-low power carbon nanotube/porphyrin synaptic arrays for persistent photoconductivity and neuromorphic computing

Developing devices with a wide-temperature range persistent photoconductivity (PPC) and ultra-low power consumption remains a significant challenge for optical synaptic devices used in neuromorphic computing. By harnessing the PPC properties in materials, it can achieve optical storage and neuromorphic computing, surpassing the von Neuman architecture-based systems. However, previous research implemented PPC required additional gate voltages and low temperatures, which need additional energy consumption and PPC cannot be achieved across a wide temperature range. Here, we fabricated a simple heterojunctions using zinc(II)-meso-tetraphenyl porphyrin (ZnTPP) and single-walled carbon nanotubes (SWCNTs). By leveraging the strong binding energy at the heterojunction interface and the unique band structure, the heterojunction achieved PPC over an exceptionally wide temperature range (77 K-400 K). Remarkably, it demonstrated nonvolatile storage for up to 2×104 s, without additional gate voltage. The minimum energy consumption for each synaptic event is as low as 6.5 aJ. Furthermore, we successfully demonstrate the feasibility to manufacture a flexible wafer-scale array utilizing this heterojunction. We applied it to autonomous driving under extreme temperatures and achieved as a high impressive accuracy rate as 94.5%. This tunable and stable wide-temperature PPC capability holds promise for ultra-low-power neuromorphic computing.