Abstract
In this paper we present measurement results of hot-carrier-induced degradation of NPT-IGBT under the condition of voltage applied on its collector.The effect of hot carriers on NPT-IGBT is investigated in three ways: stress test measurement according to the gate voltage under the voltage of 400 V applied, TCAD (Tsuprem4 and MEDICI) simulation and electric charge pumping test measurement. The experimental results confirm that the proposed structure of NPT-IGBT has sustainable characteristics and enables the hot-carrier-induced degradation to be effectively optimized in order to guarantee the stability of the device.
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