Abstract
Organic semiconductor gas sensors of α-hexathiophene (α-6 T) films as active layers with dual heterogeneous interface layers of p-hexabiphenyl and pentacene films are prepared by continuous vacuum evaporation method. The enhanced properties of sensors are achieved by modulating the thickness of the α-6 T films. The sensitivity of 1373 %/ ppm and a theoretical low detection limit of 361 ppb are obtained. The sensors demonstrate fast response and recovery properties of 1.05 and 1.51 min for NO2 gas of 20 ppm. The improved performance is attributed to the continuity of the interface layers and high adsorption of island-like growth. This approach is effective to improve organic sensors by introducing dual heterogeneous interface and tuning the growth of active layers.
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