The size of semiconductor devices was decreasing, which brings severe challenges to traditional microelectronic technology. The improved memory model of floating gate MOS (metal–oxidesemiconductor) structure was proposed and applied. Based on this, the nano information storage model based on sensor bus was constructed. The sensor bus structure based on CAN (Controller Area Network) technology was designed by using the on-site regional control network and object connection embedding technology. The three-phase data acquisition system with the energy metering chip CS5490 as the core was used to collect the signals of the voltage and current sensors, and the CAN sensor bus controller was used to transmit the collected signals. The transmitted signal was stored in the information storage model of the nanocrystalline floating gate structure, which uses metal nanocrystals with the higher work function to store the charge. Increase the barrier between the storage node and the gate dielectric to improve program/erase and information retention. Experimental results show that the constructed model has longer data retention time while having low operating voltage and low power consumption.