A high gain and high bandwidth three stage amplifier using FGMOS and 0.5 V dual supply

Abstract

A novel CMOS transistor implementation of three stage amplifier is presented in this work. The floating gate metal oxide semiconductor (FGMOS) transistor current mirror is exploited here to minimize supply requirements and to overcome the bandwidth reduction due to FGMOS transistor, frequency compensation techniques have been applied in subsequent stages. This amplifier is useful for application of low-voltage low-power VLSI as it requires a dual supply of only ± 0.5 V. The power consumption is 0.157 mW and slew rate is 6.5 V/μs. The gain bandwidth product of the circuit is calculated as 59.1 MHz and dc gain is 111.5 dB. All simulations are carried out in 180 nm technology with spice tools.