Electrostatic Gating Research Articles

Voltage-tunable graphene-InP schottky photodetector with enhanced responsivity using plasmonic waveguide integration

In this work, we propose and theoretically investigate a novel side-illuminated graphene Schottky photodetector (SIGS-PD) integrated on an InP waveguide platform suitable for the telecommunication wavelength of 1.55 μm. Bilayer graphene is positioned to absorb the transverse magnetic (TM) mode, with an InP substrate forming a Schottky junction to enable electrical connectivity and carrier separation. Through electrostatic gating, the graphene Fermi level is actively tuned to reach an epsilon-near-zero condition of 0.51 eV, transitioning the optical properties from dielectric to metallic. This supports reconfigurable plasmonic modes confined within the subwavelength graphene layer, interacting strongly with the TM optical mode. Responsivity of TM mode is enhanced 10 × TE mode reaching 1.24 A W−1 at the epsilon-near-zero point for the wavelength of 1.55 μm due to discontinuity and localization of the perpendicular electric field. The maximum responsivity is achieved at reverse bias of 4.5 V for device lengths under 4 μm. Dark current is suppressed to 10−15 A by the rectifying Schottky junction. An internal specific detectivity of 9.6 × 1012 Jones is predicted along with >25 GHz bandwidth, exploiting combined benefits of plasmonic enhancement and electrical transport control in the hybrid graphene-InP platform. The voltage-tunability of the graphene optical properties provides a pathway to dynamically optimize device performance. This work demonstrates a route towards high-responsivity and high-speed graphene photodetectors seamlessly integrated with photonic integrated circuits.

Seeded growth of single-crystal black phosphorus nanoribbons.

Two-dimensional materials have emerged as an important research frontier for overcoming the challenges in nanoelectronics and for exploring new physics. Among them, black phosphorus, with a combination of a tunable bandgap and high mobility, is one of the most promising systems. In particular, black phosphorus nanoribbons show excellent electrostatic gate control, which can mitigate short-channel effects in nanoscale transistors. Controlled synthesis of black phosphorus nanoribbons, however, has remained an outstanding problem. Here we report large-area growth of black phosphorus nanoribbons directly on insulating substrates. We seed the chemical vapour transport growth with black phosphorus nanoparticles and obtain uniform, single-crystal nanoribbons oriented exclusively along the [100] crystal direction. With comprehensive structural calculations, we discover that self-passivation at the zigzag edges holds the key to the preferential one-dimensional growth. Field-effect transistors based on individual nanoribbons exhibit on/off ratios up to ~104, confirming the good semiconducting behaviour of the nanoribbons. These results demonstrate the potential of black phosphorus nanoribbons for nanoelectronic devices and also provide a platform for investigating the exotic physics in black phosphorus.

Strong contact resistance effects on vertical carrier density profile and surface trap density in WSe2 multilayers

Conducting channel migration depending on the thickness of 2D multilayers has been demonstrated theoretically and experimentally by ascribing it to the high interlayer barrier and thickness-dependent carrier mobility via an electrostatic gate and drain bias. However, the unique charge carrier transport feature is significantly suppressed when a high contact resistance is exhibited at the metal-to-2D semiconducting multilayers, in addition to the inherent tunneling barrier between neighboring layers. Herein, we report strong channel access contact resistance effects on the vertical carrier density profile and surface trap density along the thickness of WSe2 multilayer transistors. For the constructed top-contact electrodes demonstrating pseudo-ohmic behavior, we observed clear double humps in the second derivative of the transconductance (dgm) curves, implying conducting channel migration along the c-axis of the WSe2 multilayers, regardless of the drain bias (VD) conditions. Meanwhile, at the bottom-contact electrodes, demonstrating a relatively high contact resistance effect, the second hump of dgm exclusively appears at high VD regimes (3.0 V ≤ VD), signaling the restricted channel migration caused by poor contact quality, even in identical WSe2 multilayers. We further confirmed this distinct feature in dgm curves by connecting the top and bottom electrodes to support our observations. Furthermore, low-frequency noise measurements were performed to determine the surface trap density of the supporting dielectrics and the relevant carrier scattering mechanism. Our study provides valuable insight into the effects of contact resistance on carrier transport and the scattering mechanism in WSe2 multilayer transistors, shedding light on the optimization of device performance and contact quality.

Dynamic Band‐Alignment Modulation in MoTe2/SnSe2 Heterostructure for High Performance Photodetector

AbstractFor two‐dimensional (2D) layered material heterojunctions, dynamic modulation of band alignments allows for the design of devices with flexible multi‐functional applications. In this paper, a device structure is presented based on a MoTe2/SnSe2 field‐effect transistor. By applying a bias voltage to the electrostatic gate, the gate voltage is adjusted from negative to positive, causing the heterojunction to transition from type‐III band alignment to type‐II band alignment. The working mechanism and device performance of the heterojunctions with different band alignments are investigated. The device exhibited outstanding detection range (from ultraviolet to infrared), detectivity (2.42 × 109 Jones), and speed (1.3 ms). Under a positive gate voltage, a higher ratio of light current to dark current (2×103) is achieved. To further demonstrate the potential of the high‐performance devices, their reliability is confirmed through their performance in image recognition using deep learning.

Bias-tunable temperature coefficient of resistance in Ge transistors

Ge-based bolometers are widely used for near-infrared detection for a broad range of applications such as thermography or chemical analysis. Notably, for the thermometers used in bolometers, integration, scaling, and sensitivity as well as functionality are of utmost importance. In this regard, Ge exhibits a favorable temperature sensitivity due to the relatively low bandgap and a high intrinsic charge carrier concentration. In this work, we demonstrate a nanoscale thermometer for bolometric applications on the base of Ge-on-insulator nanosheets with monolithic Al source/drain contacts envisioned for future wafer-scale integration. Importantly, electrostatic gating of the nanosheets allows the operation as a Schottky barrier field-effect transistor, providing tunability of the energy landscape and the involved charge carrier injection in interaction with the metal-semiconductor junctions. In this approach, the top-gate electrode and drain contact are connected, thus resembling a two-terminal device with bias-tunable temperature coefficient of resistance (TCR) values between 0%/K and −3.8%/K in the temperature range of T = 125–150 K. Moreover, in this configuration, even at room temperature, a maximum TCR value of −1.6%/K is achieved. The bias-tunable TCR exhibited in these devices may enable advanced concepts for room temperature bolometric applications and allow co-integration with nanoelectronics.

Electric control of optically-induced magnetization dynamics in a van der Waals ferromagnetic semiconductor

Electric control of magnetization dynamics in two-dimensional (2D) magnetic materials is an essential step for the development of novel spintronic nanodevices. Electrostatic gating has been shown to greatly affect the static magnetic properties of some van der Waals magnets, but the control over their magnetization dynamics is still largely unexplored. Here we show that the optically-induced magnetization dynamics in the van der Waals ferromagnet Cr2Ge2Te6 can be effectively controlled by electrostatic gates, with a one order of magnitude change in the precession amplitude and over 10% change in the internal effective field. In contrast to the purely thermally-induced mechanisms previously reported for 2D magnets, we find that coherent opto-magnetic phenomena play a major role in the excitation of magnetization dynamics in Cr2Ge2Te6. Our work sets the first steps towards electric control over the magnetization dynamics in 2D ferromagnetic semiconductors, demonstrating their potential for applications in ultrafast opto-magnonic devices.

Control-gate-free reconfigurable transistor based on 2D MoTe2 with asymmetric gating

As transistor footprint scales down to the sub-10 nm regime, the process development for advancing to further technology nodes has encountered slowdowns. Achieving greater functionality within a single chip requires concurrent development at the device, circuit, and system levels. Reconfigurable transistors possess the capability to transform into both n-type and p-type transistors dynamically during operation. This transistor-level reconfigurability enables field-programmable logic circuits with fewer components compared to conventional circuits. However, the reconfigurability requires additional polarity control gates in the transistor and potentially impairs the gain from a smaller footprint. In this paper, we demonstrate a 2D control-gate-free reconfigurable transistor based on direct modulation of out-of-plane conduction in an ambipolar MoTe2 channel. Asymmetric electrostatic gating at the source and drain contacts is employed in the MoTe2 transistor resulting in different Schottky barrier widths at the two contacts. Consequently, the ambipolar conduction is reduced to unipolar conduction, where the current flow direction determines the preferred carrier type and the transistor polarity. Temperature dependence of the transfer characteristics reveals the Schottky barrier-controlled conduction and confirms that the Schottky barrier widths at the top contact are effectively tuned by electrostatic gating. Without the complexity overhead from polarity control gates, control-gate-free reconfigurable transistors promise higher logic density and lower cost in future integrated circuits.

Electrostatic Gating of Phosphorene Polymorphs.

The ability to directly monitor the states of electrons in modern field-effect transistors (FETs) could transform our understanding of the physics and improve the function of related devices. In particular, phosphorene allotropes present a fertile landscape for the development of high-performance FETs. Using density functional theory-based methods, we have systematically investigated the influence of electrostatic gating on the structures, stabilities, and fundamental electronic properties of pristine and carbon-doped monolayer (bilayer) phosphorene allotropes. The remarkable flexibility of phosphorene allotropes, arising from intra- and interlayer van der Waals interactions, causes a good resilience up to equivalent gate potential of two electrons per unit cell. The resilience depends on the stacking details in such a way that rotated bilayers show considerably higher thermodynamical stability than the unrotated ones, even at a high gate potential. In addition, a semiconductor to metal phase transition is observed in some of the rotated and carbon-doped structures with increased electronic transport relative to graphene in the context of real space Green's function formalism.

Atomically Thin Current Pathways in Graphene through Kekulé-O Engineering.

We demonstrate that the current flow in graphene can be guided on atomically thin current pathways by the engineering of Kekulé-O distortions. A grain boundary in these distortions separates the system into topologically distinct regions and induces a ballistic domain-wall state. The state is independent of the orientation of the grain boundary with respect to the graphene sublattice and permits guiding the current on arbitrary paths. As the state is gapped, the current flow can be switched by electrostatic gates. Our findings are explained by a generalization of the Jackiw-Rebbi model, where the electrons behave in one region of the system as Fermions with an effective complex mass, making the device not only promising for technological applications but also a test-ground for concepts from high-energy physics. An atomic model supported by DFT calculations demonstrates that the system can be realized by decorating graphene with Ti atoms.

Electrostatic Gating of Spin Dynamics of a Quasi-2D Kagome Magnet.

Electrostatic gating has emerged as a powerful technique for tailoring the magnetic properties of two-dimensional (2D) magnets, offering exciting prospects including enhancement of magnetic anisotropy, boosting Curie temperature, and strengthening exchange coupling effects. Here, we focus on electrical control of the ferromagnetic resonance of the quasi-2D Kagome magnet Cu(1,3-bdc). By harnessing an electrostatic field through ionic liquid gating, significant shifts are observed in the ferromagnetic resonance field in both out-of-plane and in-plane measurements. Moreover, the effective magnetization and gyromagnetic ratios display voltage-dependent variations. A closer examination reveals that the voltage-induced changes can modulate magnetocrystalline anisotropy by several hundred gauss, while the impact on orbital magnetization remains relatively subtle. Density functional theory (DFT) calculations reveal varying d-orbital hybridizations at different voltages. This research unveils intricate physics within the Kagome lattice magnet and further underscores the potential of electrostatic manipulation in steering magnetism with promising implications for the development of spintronic devices.

Elucidating Piezoelectricity and Strain in Monolayer MoS2 at the Nanoscale Using Kelvin Probe Force Microscopy.

Strain engineering modifies the optical and electronic properties of atomically thin transition metal dichalcogenides. Highly inhomogeneous strain distributions in two-dimensional materials can be easily realized, enabling control of properties on the nanoscale; however, methods for probing strain on the nanoscale remain challenging. In this work, we characterize inhomogeneously strained monolayer MoS2 via Kelvin probe force microscopy and electrostatic gating, isolating the contributions of strain from other electrostatic effects and enabling the measurement of all components of the two-dimensional strain tensor on length scales less than 100 nm. The combination of these methods is used to calculate the spatial distribution of the electrostatic potential resulting from piezoelectricity, presenting a powerful way to characterize inhomogeneous strain and piezoelectricity that can be extended toward a variety of 2D materials.

Performance potential of transistors based on tellurium nanowire arrays: A quantum transport study

Low-dimensional nanomaterials provide promising material platforms for aggressively scaled transistor technologies. We assess the performance potential of transistors based on an array of Tellurium nanowires (TNWs), by parameterizing a machine-learning (ML) tight-binding model with quantum transport device simulations. It has been shown that a transistor based on a parallel array of carbon nanotubes (CNTs) can have excellent on-state performance, but the small bandgap limits the transistor scalability and off-state performance. Our results indicate that compared to the CNT array FETs, the TNW array FETs have significantly suppressed ambipolar transport and improved subthreshold characteristics. The TNW array FET has the potential to achieve a near-ideal subthreshold swing (SS) close to 60 mV/dec, a very large on–off ratio (>109), and low source-drain leakage current at a 10 nm-scale channel length, due to its excellent gate electrostatics with a gate-all-around (GAA) structure, larger band gap and reduced quantum–mechanical tunneling. The TNW array FET also shows excellent scalability with a SS below 100 mV/dec when the channel length is further scaled down to 5 nm. Its larger bandgap and heavier effective mass significantly reduce quantum tunneling. This mechanism contributes to improved subthreshold and lower leakage but also highlights the need to develop low Schottky barrier contacts for TNWs.

Shaping Graphene Superconductivity with Nanometer Precision.

Graphene holds great potential for superconductivity due to its pure 2D nature, the ability to tune its carrier density through electrostatic gating, and its unique, relativistic-like electronic properties. At present, still far from controlling and understanding graphene superconductivity, mainly because the selective introduction of superconducting properties to graphene is experimentally very challenging. Here, a method is developed that enables shaping at will graphene superconductivity through a precise control of graphene-superconductor junctions. The method combines the proximity effect with scanning tunnelling microscope (STM) manipulation capabilities. Pb nano-islands are first grown that locally induce superconductivity in graphene. Using a STM, Pb nano-islands can be selectively displaced, over different types of graphene surfaces, with nanometre scale precision, in any direction, over distances of hundreds of nanometres. This opens an exciting playground where a large number of predefined graphene-superconductor hybrid structures can be investigated with atomic scale precision. To illustrate the potential, a series of experiments are performed, rationalized by the quasi-classical theory of superconductivity, going from the fundamental understanding of superconductor-graphene-superconductor heterostructures to the construction of superconductor nanocorrals, further used as "portable" experimental probes of local magnetic moments in graphene.

Half‐Valley Ohmic Contact: Contact‐Limited Valley‐Contrasting Current Injection

AbstractThe 2D ferrovalley semiconductor (FVSC) with spontaneous valley polarization offers an exciting material platform for probing Berry phase physics. How FVSC can be incorporated in valleytronic device applications, however, remain an open question. Here, the concept of metal/semiconductor (MS) contact into the realm of valleytronics is generalized. A half‐valley Ohmic contact is proposed based on FVSC/graphene heterostructure, where the two valleys of FVSC separately forms Ohmic and Schottky contacts with those of graphene, thus allowing current to be valley‐selectively injected through the ‘Ohmic’ valley while being blocked in the ‘Schottky’ valley. A theory of contact‐limited valley‐contrasting current injection is developed and such transport mechanism can produce gate‐tunable valley‐polarized injection current. Using RuCl2/graphene heterostructure as an example, a device concept of valleytronic barristor is illustrated, where high valley polarization efficiency and sizable current on/off ratio, can be achieved under experimentally feasible electrostatic gating conditions. These findings uncover contact‐limited valley‐contrasting current injection as an efficient mechanism for valley polarization manipulation, and reveals the potential of valleytronic MS contact as a functional building block of valleytronic device technology.

Nonvolatile Memristive Effect in Few-Layer CrI3 Driven by Electrostatic Gating.

The potential of memristive devices for applications in nonvolatile memory and neuromorphic computing has sparked considerable interest, particularly in exploring memristive effects in two-dimensional (2D) magnetic materials. However, the progress in developing nonvolatile, magnetic field-free memristive devices using 2D magnets has been limited. In this work, we report an electrostatic-gating-induced nonvolatile memristive effect in CrI3-based tunnel junctions. The few-layer CrI3-based tunnel junction manifests notable hysteresis in its tunneling resistance as a function of gate voltage. We further engineered a nonvolatile memristor using the CrI3 tunneling junction with low writing power and at zero magnetic field. We show that the hysteretic transport observed is not a result of trivial effects or inherent magnetic properties of CrI3. We propose a potential association between the memristive effect and the newly predicted ferroelectricity in CrI3 via gating-induced Jahn-Teller distortion. Our work illuminates the potential of 2D magnets in developing next-generation advanced computing technologies.

Quantum Transport Properties of Monolayer MoS2, WS2, and Black Phosphorus: A Comparative Study

A comparative study of the performance analysis of dual-gate ballistic monolayer Molybdenum disulfide (MoS2), tungsten disulfide (WS2), and black phosphorus (BP) field-effect transistors (FETs) is presented. A thorough investigation of output and transfer characteristics infers that WS2 FET exhibits better performance as compared to MoS2 and BP. Furthermore, among all three FETs (MoS2, WS2, and BP), the WS2 based FET has a higher carrier velocity. However, variation of gate capacitance (CG) with gate voltage (VG) reflects a very good electrostatic gate control of MoS2 FET due to higher surface charge accumulation. Except for CG, the overall performance of WS2 based FET is better than MoS2 and BP.

Tunneling towards efficiency: A survey of design and optimization strategies for tunnel FETs in ultra-low power applications

The tunnel field-effect transistor (TFET) is a promising technology for low-power applications due to its high performance at reduced voltages through quantum tunneling. This article overviews TFETs and their potential to reduce power consumption in digital circuits, analog circuits, and energy harvesting applications. It highlights the challenges faced in TFET design, including gate electrostatics, source doping, and off-state limitations. The importance of design considerations and material selections is discussed, emphasizing their impact on TFET performance. Various fabrication techniques for TFETs are explored, highlighting their significance in achieving efficient and effective devices. The review concludes by stressing the need for further research and development to address existing challenges and unlock the full potential of TFETs in low-power electronic systems.

Thermal and electrostatic tuning of surface phonon-polaritons in LaAlO3/SrTiO3 heterostructures

Phonon polaritons are promising for infrared applications due to a strong light-matter coupling and subwavelength energy confinement they offer. Yet, the spectral narrowness of the phonon bands and difficulty to tune the phonon polariton properties hinder further progress in this field. SrTiO3 – a prototype perovskite oxide - has recently attracted attention due to two prominent far-infrared phonon polaritons bands, albeit without any tuning reported so far. Here we show, using cryogenic infrared near-field microscopy, that long-propagating surface phonon polaritons are present both in bare SrTiO3 and in LaAlO3/SrTiO3 heterostructures hosting a two-dimensional electron gas. The presence of the two-dimensional electron gas increases dramatically the thermal variation of the upper limit of the surface phonon polariton band due to temperature dependent polaronic screening of the surface charge carriers. Furthermore, we demonstrate a tunability of the upper surface phonon polariton frequency in LaAlO3/SrTiO3 via electrostatic gating. Our results suggest that oxide interfaces are a new platform bridging unconventional electronics and long-wavelength nanophotonics.

Two‐Dimensional Memtransistors for Non‐Von Neumann Computing: Progress and Challenges

AbstractThe increased demand of high‐performance computing systems has exposed the inherent limitations of the current state‐of‐the‐art von Neumann architecture. Therefore, developing alternate computing primitives that can offer faster computing speed with low energy expenditure is critical. In this context, while several non‐volatile memory (NVM) devices such as synaptic transistors, spintronic devices, phase change memory (PCM), and memristors have been demonstrated in the past, their two‐terminal nature necessitates additional peripheral elements that increase area and energy overhead. Recently, a new multiterminal device prototype known as a memtransistor has shown tremendous potential to overcome these limitations through exceptional control of the gate electrostatics as enabled by 2D channel materials. In this perspective, a brief overview of recent developments in 2D‐memtransistor devices is provided, including their fundamental operational mechanisms and the role of defects in enabling multiple NVM states and optical photoresponse. An overview of their implementation in the context of neuromorphic, probabilistic, information security, and edge‐sensing primitives is also provided. Finally, a futuristic perspective is provided looking toward their successful large‐scale technological integration.

Spin Pumping in Moderately Perpendicular W/CoFeB/HfOx Thin Films

Large perpendicular magnetic anisotropy (PMA) and spin-orbit torques are two essential requirements for high-density and energy-efficient spintronic devices. Recent advances in magneto-electric and magneto-ionic control of PMA and spin-orbit torques have opened a pathway to explore different oxide materials with large dielectric constant and high ion mobility. Motivated by interesting memristive properties of HfOx, here, using broadband ferromagnetic resonance measurements, we study the spin pumping in-plane to perpendicularly magnetized W(5[Formula: see text]nm)/CoFeB(tCFB) system capped with 4[Formula: see text]nm HfOx thin films. We find a large spin pumping and significant PMA strength for HfOx-based thin films. Using ferromagnetic thickness dependence, we also calculate the spin mixing conductance in the trilayer system which is found to be similar to MgO-based thin film stacks. These results will be highly useful for various spintronic applications with electro-static, ionic and memristive gating.