Abstract
A comparative study of the performance analysis of dual-gate ballistic monolayer Molybdenum disulfide (MoS2), tungsten disulfide (WS2), and black phosphorus (BP) field-effect transistors (FETs) is presented. A thorough investigation of output and transfer characteristics infers that WS2 FET exhibits better performance as compared to MoS2 and BP. Furthermore, among all three FETs (MoS2, WS2, and BP), the WS2 based FET has a higher carrier velocity. However, variation of gate capacitance (CG) with gate voltage (VG) reflects a very good electrostatic gate control of MoS2 FET due to higher surface charge accumulation. Except for CG, the overall performance of WS2 based FET is better than MoS2 and BP.
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