Abstract
Large perpendicular magnetic anisotropy (PMA) and spin-orbit torques are two essential requirements for high-density and energy-efficient spintronic devices. Recent advances in magneto-electric and magneto-ionic control of PMA and spin-orbit torques have opened a pathway to explore different oxide materials with large dielectric constant and high ion mobility. Motivated by interesting memristive properties of HfOx, here, using broadband ferromagnetic resonance measurements, we study the spin pumping in-plane to perpendicularly magnetized W(5[Formula: see text]nm)/CoFeB(tCFB) system capped with 4[Formula: see text]nm HfOx thin films. We find a large spin pumping and significant PMA strength for HfOx-based thin films. Using ferromagnetic thickness dependence, we also calculate the spin mixing conductance in the trilayer system which is found to be similar to MgO-based thin film stacks. These results will be highly useful for various spintronic applications with electro-static, ionic and memristive gating.
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