Current Turn-on Research Articles

A novel 4H–SiC IGBT with double gate PMOS for improving the switch controllability and FBSOA

In this work, a 4H–SiC insulated-gate bipolar transistor (IGBT) with double gate PMOS (DGPMOS) is proposed. In the on-state, DGPMOS IGBT can form a hole barrier, thus reducing the on-state voltage (VON). During the turn-on and turn-off transients, DGPMOS IGBT can form the extra hole extraction paths. This helps to reduce the turn-off loss (Eoff) and the gate displacement current (IG_dis). The simulation results show that compared with GS IGBT, the VON of DGPMOS IGBT is decreased by 58.04% under the same Eoff. Compared with PMOS IGBT, DGPMOS IGBT achieves better controllability in turn-on dIC/dt and peak turn-on current (Imax). At the same turn-on loss (Eon), the maximum reverse recovery dVKA/dt is lowered by 26.67%, and the electromagnetic interference (EMI) noise is suppressed. In addition, because DGPMOS IGBT has a small saturation current density (Jsat), its forward bias safe operating area (FBSOA) is greatly improved.

Phase-Shifting Adaptive LLC Resonant Converter with Reduced Turn-Off Loss in Wide Voltage Application

In this paper, a hybrid control method with adaptive phase-shifting modulation (PSM) and pulse-frequency modulation (PFM) is proposed to optimize the steady-state performance of an LLC resonant converter in wide voltage-gain range application. For the primary-side switches under the hybrid control method, zero-voltage switching (ZVS) performance is maintained over wide voltage-gain range and the turn-off loss is reduced; therefore, the converter reconciles wide voltage-gain range and high efficiency. Mode characteristics under different phase-shifting-angle-θ and switching-frequency-fs combinations is analyzed, and then the soft-switching characteristic is revealed. By introducing time domain analysis, the turn-on current of the primary-side switches is calculated, and thus the ZVS boundary of different θ and fs combinations is inferred. In addition, to acquire the optimum steady-state operation of the converter, the turn-off current is calculated; by making the converter work near to the minimum turn-off current operating point, the turn-off loss can be reduced greatly. With the principles of achieving ZVS performance and minimizing turn-off current, the phase-shifting angle θ of PSM is designed to be adaptive to the reference output voltage, no additional circuits are needed, and the two control degrees (θ and fs) are simplified to one (fs). The simulation and experiment are developed to verify the feasibility and effectiveness of the hybrid control method; the results show that ZVS performance is maintained at wide voltage-gain range and the turn-off current of the hybrid control method is reduced to that of the single PFM, and thus the turn-off loss is reduced. The efficiency comparison validates the fact that the hybrid control method has less power loss than single PSM and single PFM.

Comparative Study of Different High Voltage Switches Used in Pulsed High Voltage Application

High-voltage switches play a crucial role in pulsed power applications, where the efficient and reliable control of highvoltage pulses is required. This study aims to compare different types of high-voltage switches commonly used in pulsed power systems including electromechanical switches, vacuum switches, gas-filled switches, triggered spark gaps and solidstate switches. The comparison study focuses on key performance parameters such as voltage handling capability, current carrying capacity, turn-on time, and repetition rates are considered to provide a comprehensive study and analysis of the switch’s suitability for different pulsed power applications. Gas-filled switches such as spark gaps, thyratrons and ignitrons have been used in pulsed power systems due to their high voltage handling capability and low switching losses. However, they suffer from a limited lifetime and require maintenance and periodic replacement. Solid-state switches, i.e. Silicon-Controlled Rectifiers (SCRs), Insulated Gate Bipolar Transistors (IGBTs) and Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) offer advantages in terms of longevity, reliability, and reduced maintenance. However, they have limitations in high-voltage applications and exhibit higher switching losses. The findings of this comparison study will assist researchers, engineers, and system designers in selecting the most appropriate high-voltage switch for pulsed power applications, considering the specific requirements and constraints of the system. This will ultimately contribute to the advancement and optimization of pulsed power technologies across a wide range of scientific, industrial, and strategic applications.

Rational design of Au NPs satellite nanostructure modified microelectrode for dual-mode detection of mercury ions in algal solution

Developing a microelectrode with in-situ multiple sensing modes will greatly expand the applicability and reliability of the analytical platform. Hence, a functional substrate with a satellite-like nanostructure was constructed on a gold microelectrode (Au ME). This structure not only amplifies the surface-enhanced Raman scattering (SERS) signal of the labeled molecule (4-nitrobenzenthiol, NBT) on the functionalized Au NPs, but also ensures the good electrical properties of the proposed functionalized microelectrode (Au ME/Au-AuNDNA). Based on this feature, the highly toxic heavy metal mercury ions (Hg2+) were used as a model to verify this dual modal analytical platform. Significantly, the proposed microelectrode has a satisfactory sensitivity to Hg2+and allows the simultaneous presentation of analytical results by dual-mode of SERS signal turn-off (LOD 2.7 × 10−11 M) and current signal turn-on (LOD 6.4 × 10−9 M), the detected concentration of Hg2+ is below the dangerous limit of World Health Organization (WHO) and the U.S. Environmental Protection Agency (EPA). This relies mainly on the formation of thymine-Hg2+-thymine (T-Hg2+-T) by the modified probe B ssDNA on the microelectrode to disrupt the satellite structure with AuNDNA, while the applied potential reduces the Hg2+ captured by T-Hg2+-T on the microelectrode surface. Such a fascinating analytical strategy was further evaluated in an environmental water sample simulated with algal solution and still showed a reliable analytical capability. Thus, the proposed dual-mode sensing concept not only opens new avenues for the coordinated application of novel electrochemical and SERS sensing techniques, but also provides a foundation for in-situ detection based on micro/nanoscale electrodes.

Evaluation of antiparallel SiC Schottky diode in SiC MOSFET phase-leg configuration of synchronous rectifier

The MOSFET synchronous rectification (SR) is widely used to reduce the conduction loss during the freewheeling period. Due to the wide band gap of silicon carbide (SiC), the intrinsic body diode of SiC MOSFET exhibits a high voltage drop. Therefore, SiC Schottky diodes (SBD) and SiC MOSFETs are usually used in reverse parallel to reduce power loss. However, the increase of equivalent junction capacitance due to the addition of an external SiC SBD could bring larger turn-on current on opposite power transistor of the phase-leg. Furthermore, as the parasitic inductance associated with layout hinders the prompt transfer of current between SiC SBD and body diode, the external SiC SBD cannot be fully utilized, and it may deteriorate the overall performance, especially at heavy load. We comprehensively compare power losses when SiC SBD are antiparallel or not, at different working conditions, including different layout compactness, load current and dead time. It’s hard to get the effect of loss reduction loss when add antiparallel SiC SBD due to the parasitic inductance induced by the layout. The results can provide a guidance to properly select SiC SBD in a phase-leg configuration under SR mode for freewheeling during the dead time.

Multi-Level Synthesis Gate Voltage Active Control Technology for Optimizing IGBT Switching Characteristics

Compared with the conducting and blocking steady-state processes, the voltage and current stress of IGBT become very higher in the turning-on and turning-off transient processes, and the instantaneous power loss increases significantly. The switching transient conditions greatly affect the reliability and stability of IGBT device and power converter. During the IGBT turning on process, the reverse recovery of the symmetrical bridge arm anti paralleled diode can cause additional turn-on loss and current peak overshoot. The gate voltage active control technology can effectively suppress current spike and reduce turn-on loss in the period from the initial opening time to Miller platform. The multilevel synthesis technology can adjust the gate voltage waveform and produce depression or bulge in the normal driving voltage waveform for a certain time. In this paper, the sensitive parameters of gate voltage active control, which affect the current overshoot, and turn-on loss of IGBT are studied based on the theoretical calculation and mathematical model. A multi-level synthesis gate voltage active control technology is proposed according to the principle of gate voltage active control. The relationship among the acting voltage amplitude, execution time, current peak and switching loss is studied. Considering the actual application conditions, the optimized active control scheme of gate voltage is designed. Finally, the switching characteristics test is carried out, the results verify that the proposed control technology can effectively reduce the current overshoot and turn-on loss in comparison with the conventional schemes.

Low leakage current and high breakdown voltage of AlGaN/GaN Schottky barrier diodes with wet-etching groove anode

AlGaN/GaN heterojunction epitaxies with wide bandgap, high critical electric field as well as high density and high mobility two-dimensional electron gas have shown great potential applications in the next-generation high-power and high-frequency devices. Especially, with the development of Si-based GaN epitaxial technique with big size, GaN devices with low cost also show great advantage in consumer electronics. In order to improve the rectification efficiency of AlGaN/GaN Schottky barrier diode (SBD), low leakage current and low turn-on voltage are important. The GaN Schottky barrier diode with low work-function metal as anode is found to be very effective to reduce turn-on voltage. However, the low Schottky barrier height makes the Schottky interface sensitive to damage to groove surface, which leads to a high leakage current. In this work, a novel wet-etching technique with thermal oxygen oxidation and KOH corrosion is used to prepare the anode groove, and the surface roughness of groove decreases from 0.57 to 0.23 nm, compared with that of the dry-etching surface of groove. Meanwhile, the leakage current is suppressed from 1.5 × 10<sup>–6</sup> to 2.6 × 10<sup>–7</sup> A/mm. Benefiting from the great corrosion selectively of hot KOH solution to AlGaN barrier layer and GaN channel layer after thermal oxygen oxidation, the spikes of the edge of groove region caused by the nonuniform distribution of plasma in the cavity is improved, and the breakdown voltage of the fabricated AlGaN/GaN SBDs is raised from –1.28 to –1.73 kV.

A Soft-Switched Single-Stage Single-Phase PFC Converter for Bidirectional Plug-In EV Charger

This paper proposes a novel zero-current assisted soft-switching bidirectional single-stage single-phase isolated power factor correction (PFC) based converter for plug-in EV charger. An isolated topology consists of a current-fed full-bridge converter with bidirectional switches on the ac-side that is connected with a full-bridge converter on the dc-side of a high-frequency transformer (HFT). HFT offers galvanic isolation for safety and high power density, and it is the most desired specification for a battery charger. The converter enables zero current switching (ZCS) of ac-side switches and zero current turn-ON for dc-side switches without any active clamp circuit or passive snubbers, which significantly reduced switching losses, footprints, and cost. The proposed modulation strategy and control technique are presented for promising the soft-switching operation of all semiconductor devices throughout the range for all modes with bidirectional power flow capability. These merits make the converter more feasible, robust, and reliable with high power density for an EV application. A comprehensive study of proposed steady-state operation, design, and simulation results is reported. A proof-of-concept hardware laboratory prototype rated at 1.5 kW is established and tested to validate the claims and proposed converter performance.

An Online Junction Temperature Monitoring Correction Method for SiC MOSFETs at Different Parasitic Parameters

Due to the remarkable performance of silicon carbide (SiC) metal–oxide–semiconductor field-effect transistor (MOSFET) on high temperature, it is promising in future applications in various applications. The accurate online junction temperature based on dynamic temperature-sensitive electrical parameters (TSEPs) is significant for the protection and condition monitoring, which can prolong or monitor the lifetime of SiC MOSFET devices. In this article, four different dynamic TSEPs, including turn-on delay time, turn-off delay time, and maximum current turn-on and turn-off switching rates, are theoretically analyzed taking the parasitic parameters into consideration. The experimental analysis of the influence of parasitic parameters ’ dynamic TSEPs is carried on using a buck converter test setup. Based on the theoretical and experimental analyses, a junction temperature correction method is proposed for SiC MOSFET. The online junction temperature monitoring experiments are used to verify the accuracy and effectiveness of the proposed method. The results show that the proposed correction method can largely eliminate the junction temperature monitoring error at different parasitic parameters. The maximum measurement error is reduced from 147 °C to 4.7 °C after correction.

A Full Load Range ZVS Isolated Three-Level DC/DC Converter with Active Commutation Auxiliary Circuit Suitable for Electric Vehicle Charging Application

The isolated three-level DC/DC converter (ITLDC) can be used to charge electric vehicles. During the constant current charging stage, the ITLDC can be designed to realize nature zero voltage switching (ZVS). However, during the constant voltage charging stage, the charging current is small; thus, nature ZVS cannot be realized. This paper presents an active commutation auxiliary circuit (ACAC) for the ITLDC to realize the full load range ZVS. With the proposed ACACs, all the main switches achieve zero-voltage turn-on and quasi zero-voltage turn-off, and the auxiliary switches realize zero current turn-on and zero-voltage turn-off; thus, the efficiency will be high. The auxiliary currents generated by the ACACs are controllable. During the constant current charging stage, the ITLDC realizes nature ZVS and the auxiliary currents are controlled to zero; thus, the ACACs do not result in high current stress or bring in additional losses, and the efficiency will be high. During the constant voltage charging stage, the charging current decreases with charging time and the charging current is too small to realize nature ZVS. Thus, the ITLDC can work with the proposed ACACs and the auxiliary currents can be controlled within a suitable value to realize ZVS. With the proposed ACACs, the ITLDC can realize ZVS during the whole charging process; thus, the efficiency will be high. The structure and operating principle of the ITLDC with ACACs are introduced and the performance of the proposed TLDC is experimentally verified on a 1.5 kW prototype converter.

Optimizing Interfacial Energetics for Conjugated Polyelectrolyte Electron Injection Layers in High Efficiency and Fast Responding Polymer Light Emitting Diodes.

Modification of the π-conjugated backbone structure of conjugated polyelectrolytes (CPEs) for use as electron injection layers (EILs) in polymer light emitting diodes (PLEDs) has previously brought conflicted results in the literature in terms of device efficiency and turn-on response time. Herein, we determine the energetics at the CPE and the light emitting polymer (LEP) interface as a key factor for PLED device performance. By varying the conjugated backbone structure of both the LEP and CPE, we control the nature of the CPE/LEP interface in terms of optical energy gap offset, interfacial energy level offset, and location of the electron–hole recombination zone. We use a wide gap CPE with a shallow LUMO (F8im-Br) and one with a smaller gap and deeper LUMO (F8imBT-Br), in combination with three different LEPs. We find that the formation of a type II heterojunction at the CPE/LEP interfaces causes interfacial luminance quenching, which is responsible for poor efficiency in PLED devices. The effect is exacerbated with increased energy level offset from ionic rearrangement and hole accumulation occurring near the CPE/LEP interface. However, a deep CPE LUMO is found to be beneficial for fast current and luminance turn-on times of devices. This work provides important CPE molecular design rules for EIL use, offering progress toward a universal PLED-compatible CPE that can simultaneously deliver high efficiency and fast response times. In particular, engineering the LUMO position to be deep enough for fast device turn-on while avoiding the creation of a large energy level offset at the CPE/LEP interface is shown to be highly desirable.

Transformerless Quadruple High Step-Up DC/DC Converter Using Coupled Inductors

This paper proposes a high voltage step-up DC/DC converter by combining a coupled inductor and a voltage multiplier rectifier. The input side of the proposed converter operates in an interleaved manner with two coupled inductors connected in parallel, and the output side is composed of a voltage multiplier rectifier where two voltage doubler rectifiers are merged in series. By changing the turns ratio of the coupled inductor of the proposed converter, the voltage gain can be increased, and additional voltage gain can be obtained by combining it with a voltage multiplier rectifier. Due to the passive lossless clamping performance of the proposed method, it is possible to recycle the leakage inductance energy of the coupled inductor and voltage stress reduction can be achieved along with zero current turn–ON and turn–OFF of switches and diodes. Finally, this paper evaluates the effectiveness and practicality of the proposed method by operating a prototype circuit with an input voltage of 20V, an output voltage of 400V, and an output power of 320W. The maximum efficiency of the proposed converter is 97.2% and the efficiency at maximum power is 94.1%.

Scaling Design Effects on Surface Buffer IGBT Characteristics

Scaling design effects on surface buffer (SB) insulated gate bipolar transistor (IGBT) is analyzed not only for power loss reduction but also for switching controllability and robustness using TCAD simulation. Although the scaling design improves turn-off loss and on-state voltage drop <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{V}_{ce(sat)}$ </tex-math></inline-formula> trade-off due to injection enhancement (IE) effect, turn-on surge current is increased by the enhancement of negative gate capacitance due to thin gate oxide. Dual gate control improves turn-on switching controllability by hole current path control. Short circuit robustness is improved by the scaling design, because the saturation current is decreased with the scaling design due to pinch-off of the n-MOS channel. From these results, the scaling design is effective in improving the SB-IGBT characteristics including high robustness.

A New Type of Tri-Input TFET with T-Shaped Channel Structure Exhibiting Three-Input Majority Logic Behavior

In this paper, we propose a new type of tri-input tunneling field-effect transistor (Ti-TFET) that can compactly realize the “Majority-Not” logic function with a single transistor. It features an ingenious T-shaped channel and three independent-biasing gates deposited and patterned on its left, right, and upper sides, which greatly enhance the electrostatic control ability between any two gates of all the three gates on the device channel and thus increase its turn-on current. The total current density and energy band distribution in different biasing conditions are analyzed in detail by TCAD simulations. The turn-on current, leakage current, and ratio of turn-on/off current are optimized by choosing appropriate work function and body thickness. TCAD simulation results verify the expected characteristics of the proposed Ti-TFETs in different working states. Ti-TFETs can flexibly be used to implement a logic circuit with a compact style and thus reduce the number of transistors and stack height of the circuits. It provides a new technique to reduce the chip area and power consumption by saving the number of transistors.

Area-Selective Chemical Doping on Solution-Processed MoS2 Thin-Film for Multi-Valued Logic Gates.

Multi-valued logic gates are demonstrated on solution-processed molybdenum disulfide (MoS2) thin films. A simple chemical doping process is added to the conventional transistor fabrication procedure to locally increase the work function of MoS2 by decreasing sulfur vacancies. The resulting device exhibits pseudo-heterojunctions comprising as-processed MoS2 and chemically treated MoS2 (c-MoS2). The energy-band misalignment of MoS2 and c-MoS2 results in a sequential activation of the MoS2 and c-MoS2 channel areas under a gate voltage sweep, which generates a stable intermediate state for ternary operation. Current levels and turn-on voltages for each state can be tuned by modulating the device geometries, including the channel thickness and length. The optimized ternary transistors are incorporated to demonstrate various ternary logic gates, including the inverter, NMIN, and NMAX gates.

Advantages of InGaN-GaN-InGaN Delta Barriers for InGaN-Based Laser Diodes.

An InGaN laser diode with InGaN–GaN–InGaN delta barriers was designed and investigated numerically. The laser power–current–voltage performance curves, carrier concentrations, current distributions, energy band structures, and non-radiative and stimulated recombination rates in the quantum wells were characterized. The simulations indicate that an InGaN laser diode with InGaN–GaN–InGaN delta barriers has a lower turn-on current, a higher laser power, and a higher slope efficiency than those with InGaN or conventional GaN barriers. These improvements originate from modified energy bands of the laser diodes with InGaN–GaN–InGaN delta barriers, which can suppress electron leakage out of, and enhance hole injection into, the active region.

Characterization of a 3.3-kV Si-SiC Hybrid Power Module in Half-Bridge Topology for Traction Inverter Application

A state-of-the-art 3.3-kV/450-A hybrid power module for the next generation traction inverter of rolling stock is reported in this paper, combining the silicon (Si) insulated-gate bipolar transistor (IGBT) and silicon carbide Schottky barrier diodes (SBDs) chips. Compared with the existing hybrid technology at the same voltage level, this module is characterized by a half-bridge topology, in which 6 IGBT and 12 SBD chips are integrated in each switch. The outnumbering of the diodes represents a promising mitigation to the low availability of SBDs at this voltage level. Both static and dynamic test of this module and an equivalent Si-based module are carried out comparatively. Apart from describing the features of compactness, low-inductance, and good current distribution among chips, this module is characterized by low turn-ON current overshooting and turn-ON loss of IGBTs, negligible diode reverse recovery time and loss, as well as flexible allowance of IGBT turnON current rising rate dI/dt. A parameterized study is carried out to benchmark the advantage of this new topology. Based on the experimental results, the performance of the hybrid module in a three-phase traction inverter circuit is also evaluated by means of electro-thermal simulation. The hybrid module distinguishes itself by describing much lower power loss and junction temperature than its Si-based counterpart.

Iron oxide-coated MWCNTs nanohybrid field emitters: a potential cold cathode for next-generation electron sources

In this paper, we have reported that the field emission properties of multiwall carbon nanotubes (MWCNTs) were significantly increased by decorating their surface by iron oxide nanoparticles. MWCNTs were prepared on silicon substrate through low-pressure chemical vapour deposition using acetylene as source gas. The iron oxide nanoparticles were grown on the surface of MWCNTs by thermal evaporation technique. Modified surface morphologies of the prepared films were characterized through field emission scanning electron microscope (FESEM), Raman spectroscopy and X-ray diffraction. A significant change in current density, stability and turn-on voltage has been observed in iron oxide-coated MWCNT films. Decoration of iron oxide nanoparticles reduces turn-on voltage from 4 to 3.4 V/μm, while current density increases from 10.15 to 33.26 mA/cm2. For practical MWCNT-based field emission devices, it is necessary to improve the emission current density and stability. The excellent field emission parameters are obtained and calculated which make them useful for high-performance field emission-based devices. The mechanism of emission of electrons is well described by the Fowler Nordheim theory.

High current density electron emission from an electrodeposited metal nanowire array

High-current electron field emitters are of interest for many applications, but state-of-the-art devices suffer from limitations such as high turn-on macroscopic field, low macroscopic current density, poor emission stability, and short lifetime. Field emitter arrays with a high spatial density of uniform emitters have the potential to address these problems. This work presents the process development, fabrication, and testing of a novel field emitter array. The authors employed electron beam lithography and templated electrodeposition to fabricate a high spatial density array of metallic nanowires, resulting in electron emission with high macroscopic current density (2 A/cm2) and low turn-on macroscopic field (4.35 V/μm). Templated electrodeposition of metallic nanowire arrays is a promising method for producing high performance field emitters.

All-inkjet-printed MoS2 field-effect transistors on paper for low-cost and flexible electronics

All-inkjet-printing of transistors has received much attention for low cost and flexible integrated circuits. However, most flexible field-effect transistors (FETs) based on the emerging two-dimensional materials suffer from the high cost of substrate and electrode materials. The requirements for high-temperature synthesis and precise control in processing add another layer of complexity. To overcome these issues, low-cost flexible paper-based MoS2 FETs were fabricated by inkjet printing of MoS2 channel materials on paper. Additionally, we proposed and achieved the mask-less and low-temperature formation of source and drain electrodes on paper using in-situ selective-area copper reduction. A low sub-threshold swing of 80 mV/dec, high on/off ratio of 105, and very high turn-on current (Ion) of 200 μA of the paper-based flexible MoS2 FETs were demonstrated using the proposed low-cost and facile all-inkjet-printing technique. The all-inkjet-printing technique assisted by in-situ copper reduction opens new opportunities for low-cost and batch fabrication of paper-based electronic devices in ambient conditions.