A novel 4H–SiC IGBT with double gate PMOS for improving the switch controllability and FBSOA

Abstract

In this work, a 4H–SiC insulated-gate bipolar transistor (IGBT) with double gate PMOS (DGPMOS) is proposed. In the on-state, DGPMOS IGBT can form a hole barrier, thus reducing the on-state voltage (VON). During the turn-on and turn-off transients, DGPMOS IGBT can form the extra hole extraction paths. This helps to reduce the turn-off loss (Eoff) and the gate displacement current (IG_dis). The simulation results show that compared with GS IGBT, the VON of DGPMOS IGBT is decreased by 58.04% under the same Eoff. Compared with PMOS IGBT, DGPMOS IGBT achieves better controllability in turn-on dIC/dt and peak turn-on current (Imax). At the same turn-on loss (Eon), the maximum reverse recovery dVKA/dt is lowered by 26.67%, and the electromagnetic interference (EMI) noise is suppressed. In addition, because DGPMOS IGBT has a small saturation current density (Jsat), its forward bias safe operating area (FBSOA) is greatly improved.