Advantages of InGaN-GaN-InGaN Delta Barriers for InGaN-Based Laser Diodes.

Liwen Cheng,Xingyu Lin,Da Yang,Shun Yao,Jiayi Zhang,Zhenwei Li,Haitao Chen,Shudong Wu

doi:10.3390/nano11082070

Liwen Cheng, Xingyu Lin + Show 6 more

Open Access

https://doi.org/10.3390/nano11082070

Copy DOI

Journal: Nanomaterials (Basel, Switzerland)	Publication Date: Aug 15, 2021
Citations: 4	License type: CC BY 4.0

Affiliation: Yangzhou University

Abstract

An InGaN laser diode with InGaN–GaN–InGaN delta barriers was designed and investigated numerically. The laser power–current–voltage performance curves, carrier concentrations, current distributions, energy band structures, and non-radiative and stimulated recombination rates in the quantum wells were characterized. The simulations indicate that an InGaN laser diode with InGaN–GaN–InGaN delta barriers has a lower turn-on current, a higher laser power, and a higher slope efficiency than those with InGaN or conventional GaN barriers. These improvements originate from modified energy bands of the laser diodes with InGaN–GaN–InGaN delta barriers, which can suppress electron leakage out of, and enhance hole injection into, the active region.

Highlights

GaN-based laser diodes (LDs) have widespread applications in data storage, laserbased TVs, and mobile laser projectors [1,2,3]
Many efforts have been made to improve the performance of GaN LDs, such as increased output power, decreased threshold current, and enhanced slope efficiency
Kuo et al reported that InGaN barriers in GaN-based light-emitting diodes (LEDs) can reduce the polarization effect in the multiple quantum well (MQW) [14]

Summary

Introduction

GaN-based laser diodes (LDs) have widespread applications in data storage, laserbased TVs, and mobile laser projectors [1,2,3]. GaN-based light-emitting diodes (LEDs) because the LD structure is much more complex. Kuo et al reported that InGaN barriers in GaN-based LEDs can reduce the polarization effect in the MQWs [14]. The improved LED performance can be obtained because of the smaller lattice mismatch between InGaN barriers and InGaN QWs than that between conventional GaN barriers and InGaN QWs [14]. The simulations are performed with LASTIP software [15], which is frequently used to predict the characteristics of GaN-based LDs [16,17,18]. Nanomaterials 2021, 11, 2070 those with GaN and InGaN barriers. The simulations are performed with LASTIP softof 8 ware [15], which is frequently used to predict the characteristics of GaN-based LDs 2[16–

Structures and Parameters

Schematics

Results

Conclusions