Abstract

In this paper, we propose a new type of tri-input tunneling field-effect transistor (Ti-TFET) that can compactly realize the “Majority-Not” logic function with a single transistor. It features an ingenious T-shaped channel and three independent-biasing gates deposited and patterned on its left, right, and upper sides, which greatly enhance the electrostatic control ability between any two gates of all the three gates on the device channel and thus increase its turn-on current. The total current density and energy band distribution in different biasing conditions are analyzed in detail by TCAD simulations. The turn-on current, leakage current, and ratio of turn-on/off current are optimized by choosing appropriate work function and body thickness. TCAD simulation results verify the expected characteristics of the proposed Ti-TFETs in different working states. Ti-TFETs can flexibly be used to implement a logic circuit with a compact style and thus reduce the number of transistors and stack height of the circuits. It provides a new technique to reduce the chip area and power consumption by saving the number of transistors.

Highlights

  • Due to the 60 mV/dec physical limit in subthreshold swing (SS) of conventional MOSFETs at room temperature, it is unrealizable to reduce power consumption by infinitely reducing the supply voltage, which would seriously degrade the circuit performance [1, 2]. e tunneling field-effect transistor (TFET) with band-to-band tunneling (BTBT) transport mechanism can achieve steep SS far below 60 mV/ dec [3,4,5,6,7,8]

  • TFETs are considered as one of the best candidates for the generation of low-power devices because their manufacturing process is compatible with modern CMOS and FinEFT technology

  • E results show an interesting feature that a single tri-input tunneling field-effect transistor (Ti-TFET) exhibits the three-input “Majority-Not” switch behavior and a reconfigurable logic function between NAND and NOR. Device characteristics such as turn-on current, leakage current, and the ratio of turn-on/turn-off current (Ion/Ioff) are optimized by choosing the appropriate work function and body thickness. e main objective of this paper is to demonstrate a novel TFET technique by taking silicon-based

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Summary

Introduction

Due to the 60 mV/dec physical limit in subthreshold swing (SS) of conventional MOSFETs at room temperature, it is unrealizable to reduce power consumption by infinitely reducing the supply voltage, which would seriously degrade the circuit performance [1, 2]. e tunneling field-effect transistor (TFET) with band-to-band tunneling (BTBT) transport mechanism can achieve steep SS far below 60 mV/ dec [3,4,5,6,7,8]. Multigate transistors with strong channel control ability have higher turn-on current than the single-gate ones. It can effectively suppress short channel effects and reduce leakage current, which has attracted researchers’ wide interest. E results show an interesting feature that a single Ti-TFET exhibits the three-input “Majority-Not” switch behavior and a reconfigurable logic function between NAND and NOR. Device characteristics such as turn-on current, leakage current, and the ratio of turn-on/turn-off current (Ion/Ioff) are optimized by choosing the appropriate work function and body thickness.

Device Structure and Simulation Approach
The Device Performances
Optimization
Conduction band
Findings
Disclosure
Full Text
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