Abstract
In this paper, a new type of tunneling field effect transistor (Ti-TFET) with tri-input terminals is proposed. The ingenious T-shaped channel (T-channel) structure enhances the control ability between any two gates of all the three gates to device channel, and thus increasing its turn-on current when any two gates are biased as 1 V. The turn-on current, leakage current and the switching ratio of turn-on/turn-off current are optimized by choosing appropriate work function and body thickness. The TCAD simulation results show that “Majority-Not” logic function can be compactly implemented by using a single Ti-TFET transistor, which can greatly reduce the transistor number and stack height in a circuit.
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