Realizing Logic Functions Using Single Double-Gate Tunnel FETs: A Simulation Study

Abstract

In this letter, a single double-gate tunnel field-effect transistor (DGTFET) is proposed to realize different logic functions and investigated using two-dimensional device simulations. It is shown that a single DGTFET can realize logic functions, such as AND, OR, NAND, and NOR by biasing the two gates independently. The key elements in obtaining different logic functions using a DGTFET are employing a gate–source overlap and choosing an appropriate silicon body thickness. Furthermore, it is demonstrated that two-input CMOS-type AND, OR, NAND, and NOR logic gates can be implemented using two DGTFETs that are designed to exhibit complimentary logic functions.