Implementation of Logic Gates Using Drain Engineering Dual Metal Gate-Based Charge Plasma TFET (DE-DMG-CP-TFET)

Abstract

For digital applications, researchers are exploring the use of Tunnel Field-Effect Transistors (TFETs) as an alternative to Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). TFETs offer unique qualities that can be harnessed in digital applications. The presented work focuses on the Drain Engineering Dual Metal Gate based Charge Plasma TFET (DE-DMG-CP-TFET) and its ability to implement various logic functions utilizing 2D device simulations. This simulation refers to employing computational tools to analyze electronic devices in two spatial dimensions, considering parameters such as current-voltage characteristics, electric field analysis, and energy band diagrams. This simulation-based approach enables a comprehensive understanding of the device’s operation under different conditions and facilitates the optimization of its performance. The simulations provide insights into the impact of design parameters, material properties, and device configurations on its functionality. By leveraging the ambipolar nature and gate-controlled tunneling capability of TFETs, compact logic functions can be realized by carefully designing the gate-source overlap and selecting an appropriate silicon body thickness. This research highlights the potential of TFETs in compact logic implementation and demonstrates the value of two-dimensional device simulations in understanding device behavior and optimizing performance. It is demonstrated that by biasing the two gates individually, a single DE-DMG-CP-TFET may implement logic operations like OR, AND, NAND and NOR. Using a gate-source overlap (L[Formula: see text] and picking the right silicon body thickness are crucial for obtaining distinct logic functions from a DE-DMG-CP-TFET.