Creation Of Interface Research Articles

Wetting in an Electronic Packaging Ceramic System: 1, Wetting of Tungsten by Glass in Controlled Oxygen Partial Pressure Atmospheres

The wetting of tungsten by a Cr2O3‐colored, CaO‐MgO‐Al2O3‐SiO2 glass was found to be independent of temperature between 1300° and 1500°C, but strongly dependent on furnace atmosphere. Similar results using two gas buffer systems (CO/CO2 and H2/H2O) established oxygen partial pressure, p02 as the critical parameter. The contact angle decreased over a narrow p02 range as the p02 increased, with a stable contact angle existing in both lower and higher p02 ranges. The solid‐liquid interfacial energy, γSL, controlled the wetting behavior. An increase in the adsorbed oxygen layer at the solid‐liquid interface resulted in a lower γSL and a lower contact angle. The equilibrium contact angles, established after 8‐h isothermal holds, ranged from 50‐55° at a p02= 10−15.5 atm to 30° at a p02= 10−10.9 atm. Two different drop formation techniques were used to show that the temperature and atmospheric conditions at the time of solid‐liquid interface formation affect the stable contact angles. The contact angle was higher when the solid‐liquid interface was established at the test temperature (doser tube technique) than when the drop was formed in situ from a piece of glass placed on the substrate at room temperature (nondoser method). This contact angle difference was again attributed to a higher γSL from the doser method due to the presence of less adsorbed oxygen at the time of the creation of the solid‐liquid interface.

Radiation effects in oxynitrides grown in N/sub 2/O

Oxynitrides have been grown by oxidation in N/sub 2/O in a standard thermal oxidation furnace. Two N/sub 2/O processes have been studied: oxidation in N/sub 2/O only, and two-step oxidation with initial oxidation in O/sub 2/ followed by oxidation/nitridation in N/sub 2/O. Results are presented for radiation damage at 80 and 295 K, hole trapping, interface trap creation, electron spin resonance, and hole de-trapping using thermally-stimulated current analysis. N/sub 2/O oxynitrides do not appear to have the well-known drawbacks of NH/sub 3/-annealed oxynitrides. Creation of interface traps during irradiation is reduced in the N/sub 2/O oxynitrides, with the degree of improvement depending on the fabrication process. >

DUET ? A database user interface design environment

The DUET database user interface management system aims to help database application programmers to create, modify, and maintain interactive graphical user interfaces for different applications. DUET supports the creation of a complete user interface via direct manipulation techniques. It provides a large set of database widgets which are necessary for database applications. DUET provides facilities to step through the validation of a created user interface. A user interface can be saved as C code which can be integrated into a database backend. In this paper, the features and the architecture of DUET are presented.

Effects of Electron Beam Damage on the Electrical Characteristics of n-type Metal-Oxide-Semiconductor Field-Effect-Transistors

The effects of electron beam damage on the degradations of n-type metal-oxide-semiconductor field-effect-transistors (n-MOSFETs) due to the creation of interface traps were investigated using charge-pumping and subthreshold slope measurement methods. The in situ device characteristics such as threshold voltage were not changed much by the electron beam damage as compared with those of virgin ones if the devices were annealed properly. The long-term reliability characteristics, however, were significantly degraded even with a small dose of electron beam irradiation. Moreover, device lifetimes were shown to decrease at a fast rate as the electron beam irradiation dose was increased even after annealing. It was also observed that the interface trap density dependency on electron beam irradiation dose investigated by the charge-pumping method was highly consistent with that by the subthreshold slope measurement technique.

Temperature and Gate Bias Effects on Gamma-Irradiated Al-Gate Metal-Oxide-Semiconductor Transistors

The annealing of irradiated Al-gate metal-oxide-semiconductor (MOS) transistors at elevated temperature ( 115°C), without gate bias for P-channel metal-oxide-semiconductor (PMOS) transistors, and with/without gate bias (+9 V) for N-channel metal-oxide-semiconductor (NMOS) transistors, has been investigated. The experimental data obtained are analyzed in terms of physicochemical and electrophysical processes responsible for creation of gate oxide charge and interface traps, as well as their anneal. The decrease of positive charge density in irradiated transistors during thermal annealing is caused by electrons tunneling from the silicon into the oxide. The rate of neutralization of positive centers depends on the irradiation dose level.

Analysis of soft breakdown failure with ESD on output buffer nMOSFETs and its improvement

The leakage increase of the off-state MOSFETs after an ESD event has been studied for output transistors with the thin gate oxide and LDD structures. Leakage increase called has been found at relatively low ESD testing voltages (200-300 V). This soft breakdown is caused by the creation of interface traps due to the snap-back stressing during the ESD event. The creation of interface traps has enhanced the interface trap to band tunneling current at the drain side of the MOSFETs. The improvement of the ESD threshold has also been proposed with an additional arsenic implantation into the n/sup $/region. It has been confirmed that the arsenic implantation improved the HBM ESD threshold to more than 2000 V. >

The time-dependence of post-irradiation interface trap build-up in deuterium-annealed oxides (n-MOSFET)

The time-dependent creation of interface traps N/sub it/, in irradiated MOS devices has been studied in oxides which were annealed in either deuterium or hydrogen. It is found that the rate of N/sub it/, buildup is significantly retarded in the deuterium-annealed oxides. It is noted that this result demonstrates conclusively that hydrogen must be involved in the N/sub it/, creation process. >

MoDE: a UIMS for Smalltalk

While the Model-View-Controller (MVC) framework has contributed to many aspects of user interface development in Smalltalk, interfaces produced with MVC often have highly coupled model, view, and controller classes. This coupling and the effort required to use MVC make user interface creation a less effective aspect of Smalltalk. The Mode Development Environment (MoDE) is a user interface management system (UIMS) which addresses the above issues. MoDE is composed of two major components: the Mode framework and the Mode Composer. The Mode framework accommodates an orthogonal design which decouples the user interface components and increases their reusability. The Mode Composer reduces the effort of using MoDE by providing a direct-manipulation user interface to its users. This paper discusses the importance of orthogonality and illustrates its incorporation into the design of MoDE. A comparison of the Mode framework and the MVC framework is included.

Integration of heterogeneous database applications through an object-oriented interface

The integration of different application environments, especially in the areas of office automation and CIM, requires integration of data stored not only in traditional databases but also in specialized file structures for graphics and complex texts. This paper proposes an approach to the development of integrated applications which is based on the creation of an object-oriented interface on top of each data repository to be integrated. This approach is shown to be more powerful than traditional approaches, and in particular to be capable of dealing with data stored in complex file structures. The feasibility of this approach is demonstrated by describing the main features of a “generalized” “integration system” based on it, and by showing how this system has been used in the integration of a complex application.

A communications interface for systems application architecture

The requirements for program-to-program communication that prompted the creation of the communications interface for IBM's Systems Application Architecture (SAA), the considerations that went into the design of its function, and the basic concepts of the interface are discussed. An example of two programs using the Communications Interface is also included. The authors conclude that the evolving SAA Common Programming Interface and the Communications Interface within it provide a programming environment of languages and services for development of application programs that span systems.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>

Relaxation effects in NMOS transistors after hot-carrier stressing

Aging studies on NMOS transistors with dry oxides at room temperature have revealed that the creation of interface traps and the trapping of positive charge in the oxide associated with hot-electron effects are not permanent, but can be reversed to some extent if the transistor drain is grounded and left for some time. The relaxation is a substantial fraction of the original degradation at low degradation values and suggests that there is an annealing of some of the traps created by stressing. This annealing follows first-order kinetics for both created interface traps and trapped oxide charge, and is characterized by relaxation times τ <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">r</inf> of 600-900 s.

Mechanisms of positive gate-bias stress induced instabilities in CMOS transistors

Increase of positive gate oxide charge and interface trap densities has been shown to be responsible for positive gate-bias stress induced instabilities of threshold voltage and gain factor in Al-gate and Si-gate CMOS transistors. The electron tunneling from trivalent-silicon and/or oxygen-vacancy defects into the oxide conduction band has been established as a mechanism of the positive gate oxide charge creation. The creation of interface traps, appearing due to interfacial trivalent silicon atoms, has been related to the reaction between interfacial Si-H or Si-OH groups and the positive gate oxide charge built up close to the oxide-silicon interface.

A methodology for the design and implementation of graphical man-machine interfaces

A real-time graphics operating system is outlined which can facilitate both the design and Implementation of large computer aided control system design packages. A total graphics environment is proposed, which could result in the evolution of standard and efficient procedures for the development of such packages and which also could result in the creation of an anthropomorphic user Interface to optimise human interpretive skills for the ready use of the resulting computer based design tools.

Innovative User Interface: Friendly Touch Control Screen for Multifunctional Electronic Printing System

So that a wide range of users can and will make effective use of the functional richness now possible in electronically intensive, multi-functional office products, Xerox Printing Systems Division has developed an innovative approach to user/system interaction. Important elements in the progression from creation, through design, development and evaluation of this friendly user interface will be reviewed. These activities were integral to the product design process and its introduction. The symposium panel consists of a behavioral scientist, a physical scientist and a computer scientist who were intimately and interactively involved in the creation and development of this unique user interface for the Xerox 5700 Electronic Printing System. The effectiveness of the integrated, multidiscipline approach used to achieve early product introduction will be discussed. Innovation was in the user interface, the product and the process by which the user interface was achieved. Time will be set aside for audience interactions and questions.

Towards The Standardization of Real-Time Operating System Kernels

Much attention has been paid to the development of high level Real-time languages these last ten years. In the expectation of a universal Real-time language (will it be Ada?), engineers may have to adopt a suitable methodology involving standard interfaces. As the tasking interface is the keystone of any Real-time operating system, we develop guide lines which may facilitate the evaluation of existing proposals or the creation of a new standard Real-time tasking interface. We analyse the existing proposals in the light of these guidelines and we set up a synthesis, present state of the BNI1 project SCEPTRE whose aim is to define a french common Real-time tasking interface.

Precipitation hardening of Ni-12.19 at.% Al alloy single crystals

Single crystal specimens of a Ni-12.19 at.% Al alloy were aged for various times at 625°C and mechanically tested in compression at 77, 191, 297 and 373°K. After subtracting the contribution of solid-solution strengthening from the measured values of the CRSS, the incremental increase in the CRSS, Δ τ , due to the γ′ precipitates was analyzed according to the theory of order strengthening. The quantitative agreement between the experimentally determined and theoretically calculated values was excellent, agreeing to within 15 per cent over the range of average γ′ particle sizes, 〈a〉 2 , where Δ τ is proportional to ( 〈a〉 2 ) 1 2 . Calculations of other possible hardening mechanisms show that the contributions from interface creation and elastic constant differences are very small in this Ni-Al alloy. However, the contribution of coherency hardening in this alloy is calculated to be roughly equivalent in magnitude to that due to order strengthening, and very strongly temperature dependent. Since the measured values of Δ τ were nearly temperature independent, we conclude that the contribution of coherency hardening is negligible.

APLIKASI PENUNJUK ARAH LOKASI KAMPUS STIMATA MENGGUNAKAN TEKNOLOGI AUGMENTED REALITY

STMIK Pradnya Paramitha (STIMATA) is one of the private universities in the city of Malang. In mid-2008 , STIMATA campus occupies a new building that is on the road Admiral Adi Sucipto . Quite a lot of people who do not know exactly where the location of the new campus Stimata , especially those residing outside the city of Malang . One reason is the location of the campus is located quite far from the center of the city of Malang.Of these problems , solutions that can be applied is to develop an application on a mobile device that can be a signpost on Stimata campus locations . The application can be put on the official website Stimata so it can be downloaded by anyone who wants to know the location of the campus Stimata easily . Manufacturing applications such directions would be more attractive and easier to use if built using Augmented Reality technology.This study aims to build and develop applications on mobile devices by utilizing Augmented Reality technology that can be used as a pointing device for its direction . Applications will be implemented on a device built Android smartphone operating system . In operation this application uses GPS coordinates to two points , the coordinates of the location coordinates of the user and Stimata campus , while the implementation of Augmented Reality technology on the application will be used Mixare engine . This study starts from the design workflow applications , the main display interface design , core application development , to the creation of the menu interface provides useful features that are provided to the user. Key words : mobile applications, directions, smartphones, Android, Augmented Reality, Mixare

The present status of pump-oxygenators and some problems related to their use

The present status of pump-oxygenators and some problems related to their use