Abstract
The time-dependent creation of interface traps N/sub it/, in irradiated MOS devices has been studied in oxides which were annealed in either deuterium or hydrogen. It is found that the rate of N/sub it/, buildup is significantly retarded in the deuterium-annealed oxides. It is noted that this result demonstrates conclusively that hydrogen must be involved in the N/sub it/, creation process. >
Full Text
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call