Abstract
Oxynitrides have been grown by oxidation in N/sub 2/O in a standard thermal oxidation furnace. Two N/sub 2/O processes have been studied: oxidation in N/sub 2/O only, and two-step oxidation with initial oxidation in O/sub 2/ followed by oxidation/nitridation in N/sub 2/O. Results are presented for radiation damage at 80 and 295 K, hole trapping, interface trap creation, electron spin resonance, and hole de-trapping using thermally-stimulated current analysis. N/sub 2/O oxynitrides do not appear to have the well-known drawbacks of NH/sub 3/-annealed oxynitrides. Creation of interface traps during irradiation is reduced in the N/sub 2/O oxynitrides, with the degree of improvement depending on the fabrication process. >
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