Charge Carrier Concentration Research Articles

Effect of preparation conditions on the surface morphology and edge absorption of ZnGa2O4:Cr thin films

Thin ZnGa2O4:Cr films were obtained by RF ion-plasma sputtering in argon and argon-oxygen atmospheres mixtures on single-crystal NaCl and amorphous υ-SiO2 substrates. The surface morphology of the films was studied by atomic force microscopy. It was found that during the annealing of ZnGa2O4:Cr films on υ-SiO2 substrates in oxygen, the grains forming the film grow along the film surface, and during annealing in an argon atmosphere, the growth of grains is observed normal to the film surface. The region of the fundamental absorption edge was studied by optical spectroscopy. The variation of the optical band gap of Eg depending on the deposition and annealing atmosphere was determined. The total effective mass of free charge carriers and the concentration of free charge carriers are estimated. It is shown that the shift of the fundamental absorption edge in ZnGa2O4:Cr thin films after annealing in an argon atmosphere and when oxygen is added to the sputtering atmosphere is due to the Burstein-Moss effect.

Transparent Conductive Titanium and Fluorine Co-doped Zinc Oxide Films.

Aerosol-assisted chemical vapor deposition (AACVD) was used to deposit highly transparent and conductive titanium or fluorine-doped and titanium-fluorine co-doped ZnO thin films on glass substrate at 450 °C. All films were characterized by X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), UV-Vis spectroscopy, scanning electron spectroscopy (SEM), and four-point probe. The films were 600-680 nm thick, crystalline, and highly transparent (80-87 %). The co-doped film consisted of 0.70 at % titanium and 1 at % fluorine, and displayed a charger carrier mobility, charge carrier concentration, and a minimum resistivity of 8.4 cm2 V-1 s-1, 3.97×1020 cm-3, and 1.69×10-3 Ω cm, respectively. A band gap of 3.6 eV was observed for the co-doped film. Compared to the undoped and singly doped films, the co-doped film displayed a notably higher structure morphology (more homogenous grains with well-defined boundaries) suitable for transparent conducting oxide applications.

Ge-Doped Hematite with FeCoNi-Bi as Cocatalyst for High-Performing Photoelectrochemical Water Splitting.

Hematite is a promising photoanode material for photoelectrochemical water-splitting technology. However, the low current density associated with the low conductivity, low charge carrier mobility, and poor oxygen evolution catalytic activity is a challenging issue for the material. In this study, the challenge is addressed by introducing Germanium (Ge) doping, coupled with the use of FeCoNi-Bi as a co-catalyst. Ge doping not only increases the conductivity and charge carrier concentration of the hematite photoanode, but also induces nanopores, thereby expanding its electrochemical reactive surface area to facilitate the oxygen evolution reaction. In the meantime, the FeCoNi-Bi cocatalyst electrodeposited onto the surface of Ge-doped hematite, improves the oxygen evolution reaction performance. As a result, the obtained photoanode achieves a photocurrent density of 2.31mAcm-2 at 1.23 VRHE, which is three times higher than that of hematite (0.72mAcm-2). Moreover, a new analytical method is introduced to scrutinize both the positive and negative effects of Ge doping and FeCoNi-Bi cocatalyst on the photoanode performance by decoupling the photoelectrochemical process steps. Overall, this study not only enhances the performance of hematite photoanodes but also guides their rational design and systematic assessment.

Scavenging Energy and Information through Dynamically Regulating the Electrical Double Layer

AbstractThe electrical double layer (EDL) between solids and liquids serves as the primary interface for ionic‐electronic coupling and is pivotal in nanoscale phenomena, governing electric field effects, ion transport, surface interactions, etc. Dynamically regulating the EDL through mechanical or electrostatic methods can influence charge carrier behavior, thereby impacting energy scavenging and storage processes. This regulation enabled efficient energy scavenging by governing ionic migration and optimizing charge carrier concentration at the interface, presenting a novel avenue to achieve efficient energy and information flow. Here, various scavenging energy and information devices through dynamically regulating the EDL are systematically reviewed. They are classified into three groups by regulating the distribution and movement of charge carriers throughout the entire EDL, diffuse layer, and Debye length range. The review provided a comprehensive overview of the operating principles, influencing factors, output characteristics, and typical applications, along with a discussion on future challenges. This holistic examination offers researchers valuable insights for evaluating their applicability in various scenarios.

Correlation between structural, morphological, and electrical transport properties of nano-dimensional Tellurium thin film by low energy ion beam irradiation

Tellurium (Te), an emerging semiconductor material, exhibits intriguing physical properties in low-dimensional forms. This study investigates the structural, morphological, and transport properties of low-dimensional Te thin film deposited by physical vapor deposition after 400 keV Kr2+ ion irradiation with varying fluences of 1 × 1013, 5 × 1013, and1 × 1014 ions-cm−2. The X-ray diffraction (XRD) pattern reveals the hexagonal phase of pristine Te. As ion fluence increases, intensity of the XRD peaks decreases and the full-width half maxima (FWHM) increases, indicating a reduction in crystallinity. The intensity of the Raman peak decreases upon irradiation, resulting in a red shift in the spectra of the irradiated sample. The evolution of morphology at different fluences has been examined with atomic force microscopy (AFM) measurements. The results indicate the segregation of grains and an increase in root mean square (RMS) roughness from 2.59 pm to 5.11 pm with ion fluence up to 5 × 1013 ions-cm−2. At the highest fluence, i.e., 1 × 1014 ions-cm−2, there is an agglomeration of grains, and hence a decrease in RMS roughness to 3.92 pm is observed. The DC resistivity measurement indicates the semiconducting nature of all films. Additionally, this measurement signifies the rapid decrease in activation energy at both band-to-band conduction and nearest neighbour hopping (NNH) conduction. Following irradiation, Hall measurement demonstrates a decrease in the concentration of charge carriers and an increase in resistivity due to scattering originating from grain boundaries. However, when the fluence is increased to 1 × 1014 ions-cm−2, there is a reduction in resistivity and an increase in carrier concentration with enhanced Hall mobility in comparison to pristine Te. Therefore, this study showcases that low-energy ion irradiation has a significant impact on the modification of the structure, morphology, and electrical transport properties of semiconducting Te thin film.

Theoretical performance optimization of enzymatic electrochemical CO2 reduction to formate: Voltage, concentration, temperature, pressure, and flow rate

Formic acid (FA) is a notable fuel product due to its atom economy, low activation energy, and applications in flow cells and hydrogen storage. While metal catalysts are typically used, selectivity remains a challenge. Here, an enzymatic catalyst is employed to selectively convert CO2 to FA as formate. This study documents the development of a computational model to examine the conversion of CO2 to formate under a wide range of conditions. The model examines the electrochemical reduction of a charge carrier, ethyl viologen (EV), and its subsequent use in an enzymatic catalyst to convert CO2 and protons in solution to formate. The model was first developed for a small-scale batch reactor, then later expanded to a dual-cell flow system, where the reduction of EV and production of formate are kept in separated cells, and flow rate is introduced as an additional variable parameter. While no studies have directly used all parameters addressed in the computations presented here, many of the conditions selected align with what has previously been used in experiments, and similar production rates and efficiencies are obtained. The most challenging parameters to study were charge carrier concentration and applied voltage, which showed optimal ranges in the cases studied for the batch and flow cell. While the study gives guidance toward which conditions would be favored experimentally to increase production rate and efficiency experimental studies should nonetheless be run at suggested optimal conditions to better adapt parameters made in both models.

Structure-dependent biomorphology Co3O4-In2O3 nanorods for expired acetone gas sensor

Currently, the detection of acetone in exhaled breath is extensively utilized for the preliminary diagnosis of diabetes and for tracking fat oxidation in exercise. However, semiconductor gas sensors often require enhancement in breath analysis because of their inherent limitations in selectivity and sensitivity to humidity. In this research, we have synthesized an effective and humidity-unaffected acetone sensing material. This was achieved by utilizing the surface induction effect of porous biomass carbon derived from hemp stems to promote the dispersion of Co3O4-In2O3 heterostructure composites, thereby increasing the availability of active sites. This unique structure is achieved by precisely integrating the p-n heterostructure formed by Co3O4-In2O3 nanorods with the hierarchical porous carbon skeleton obtained via the calcination of templates. The p-n heterostructure enhances charge carrier concentration at the interface, thereby augmenting the activation of surface-active oxygen. The composite material's interface barrier improves sensor selectivity, reducing operating temperature (200 °C) and enhancing response rate. In this work, our best sample Coln-3/BC gas sensor exhibits excellent response towards acetone gas (S=Rair/Rgas=56.8 at 100 ppm), low detection limit of 10 ppb, a linear relationship between sensing response and humidity that strikes a balance between irrelevance as well as exceptional selectivity and stability. Therefore, constructing hierarchical structures and gas-sensing materials based on p-n heterojunctions holds promising prospects.

Synthesis and characterization of 1T′ and 2H phase coexistence 2D Re1-xMoxS2 alloy films and their application for photodetectors

Alloying is considered an efficient strategy to engineer the crystal structure, modulate the energy band structure and charge carrier concentration by adjusting the elemental composition of transition metal dichalcogenides (TMDs). Here, the two-dimensional (2D) Re1-xMoxS2 alloy films with tunable composition and phase structure were prepared on mica substrates by chemical vapor deposition (CVD) method. The back-gated field effect transistors (FETs) based on 2D Re1-xMoxS2 alloy films were prepared. The Mo component x in 2D Re1-xMoxS2 alloy films was varied from 0, 0.2, 0.4, 0.5, 0.6, 0.8–1 by changing mole ratio of ReO3 to MoO3 while the total number of moles remains the same. The Mo composition-dependent morphology phase structure, electrical transport properties and photoelectric properties of Re1-xMoxS2 alloy films were studied in detail. The results indicate that the 1T′ phase Mo-doped ReS2 and 2H phase Re-doped MoS2 coexist, and the ratio of 2H phase Re-doped MoS2 to 1T′ phase Mo-doped ReS2 can be modulated by changing Mo component x in Re1-xMoxS2 alloy films. 1T′ phase Mo-doped ReS2 exhibits the p-type conduction feature while 2H phase Re-doped MoS2 shows the n-type conduction behavior. The Re1–xMoxS2 alloy devices show obvious photoelectric response to 405, 532, 635 and 808 nm lasers irradiation. The Re0.5Mo0.5S2 (x= 0.5) has the maximum responsivity R of 1024.1 mA/W and external quantum efficiency EQE of 239.3% under 532 nm laser irradiation.

Unravelling the structural, electronic, mechanical and thermoelectric properties of half-Heusler alloys NaYX (X = C, Si, Ge, Sn)

We investigate the structural, electronic, and thermoelectric properties of the newly designed half-Heusler (hH) alloys NaYX (X = C, Si, Ge, Sn) using first-principles methods combined with Boltzmann transport theory. Our results indicate that the hH alloys are chemically, mechanically, as well as dynamically stable. The electronic calculations suggest that all the alloys are direct bandgap semiconductor with a bandgap of NaYC (0.52 eV), NaYSi (0.56 eV), NaYGe (0.57 eV) and NaYSn (0.65 eV). The lattice thermal conductivities of the hH alloys are quite low (12-24 W m−1 K−1) at room temperature. The computed figure of merit (ZT) for p-type charge carrier concentration show higher value for NaYC alloy (ZT = 0.57) as compared to NaYSi (ZT = 0.07),NaYGe (ZT = 0.27) and NaYSn (ZT = 0.42) at 1200 K, respectively. Altogether, our results indicate the potential of hH alloys for the high-temperature thermoelectric applications.

Assessment of de-toxicity of treated dye solution via seed germination test: Photocatalytic treatment by Morinda citrifolia leaf extract mediated ZnO:Mo/g-C3N4 nanocomposite

Molybdenum doped zinc oxide (ZnO:Mo) nanoparticles and ZnO:Mo/g-C3N4nanocomposites were prepared via green synthesis by using Morinda citrifolia (M. citrifolia) extract as the reducing agent. Another set of ZnO:Mo and ZnO:Mo/g-C3N4 nanomaterials were prepared using NaOH as the reducing agent and their photocatalytic efficiencies against methylene blue (MB) and methyl orange (MO) were evaluated and compared with those of their green synthesized counterparts. The degrading efficiency of green synthesized ZnO:Mo/g-C3N4 was 99 and 96 % against MB and MO of dyes, respectively, whereas the respective values in the case of chemical synthesis are only 95 and 90 %. The mechanism lies behind the photocatalytic activity of the nanocomposite was elaborated. The enhanced charge carrier concentration caused by Mo doping and the synergistic advantages of the composite partners, like band gap reduction and reduced recombination rate are discussed with relevant references. The water samples photocatalytically treated by the nanomaterials were applied to green gram seeds and the growth process is evaluated and compared. The powder XRD, field emission SEM, TEM, FTIR and EDAX results and the related analyses are presented as corroborative evidences for the composite formation and enhanced photocatalytic activity. The prepared green synthesized ZnO:Mo/g-C3N4 nanocomposite will be a promising material for de-toxification of dye effluents to make it conducive for seed germination and plant growth.

β-Phase Yb5Sb3Hx: Magnetic and Thermoelectric Properties Traversing from an Electride to a Semiconductor.

An electride is a compound that contains a localized electron in an empty crystallographic site. This class of materials has a wide range of applications, including superconductivity, batteries, photonics, and catalysis. Both polymorphs of Yb5Sb3 (the orthorhombic Ca5Sb3F structure type (β phase) and hexagonal Mn5Si3 structure type (α phase)) are known to be electrides with electrons localized in 0D tetrahedral cavities and 1D octahedral chains, respectively. In the case of the orthorhombic β phase, an interstitial H can occupy the 0D tetrahedral cavity, accepting the anionic electron that would otherwise occupy the site, providing the formula of Yb5Sb3Hx. DFT computations show that the hexagonal structure is energetically favored without hydrogen and that the orthorhombic structure is more stable with hydrogen. Polycrystalline samples of orthorhombic β phase Yb5Sb3Hx (x = 0.25, 0.50, 0.75, 1.0) were synthesized, and both PXRD lattice parameters and 1H MAS NMR were used to characterize H composition. Magnetic and electronic transport properties were measured to characterize the transition from the electride (semimetal) to the semiconductor. Magnetic susceptibility measurements indicate a magnetic moment that can be interpreted as resulting from either the localized antiferromagnetically coupled electride or the presence of a small amount of Yb3+. At lower H content (x = 0.25, 0.50), a low charge carrier mobility consistent with localized electride states is observed. In contrast, at higher H content (x = 0.75, 1.0), a high charge carrier mobility is consistent with free electrons in a semiconductor. All compositions show low thermal conductivity, suggesting a potentially promising thermoelectric material if charge carrier concentration can be fine-tuned. This work provides an understanding of the structure and electronic properties of the electride and semiconductor, Yb5Sb3Hx, and opens the door to the interstitial design of electrides to tune thermoelectric properties.

Investigating dual-functional Al-doped stannic oxide nanorods towards photodegradation of real industry wastes and dye-sensitized solar cell application: An experimental and theoretical interpretation

In this work, we demonstrate a uniquely designed Tin (IV) Oxide (SnO2)-based nanomaterials for energy and environmental applications. Here, the Al-doped SnO2 nanorods (NR) at various concentrations ranging from 3 wt% to 9 wt% carried out following facile co-precipitation technique which induced synergic structural, optical and electrical properties in resulting products. Further, the Al-incorporation induced considerable changes to the structural, optical, and electrical characteristics turning SnO2 nanorods to Al-SnO2 nanocubes (NCs). Resulting changes from nanorod to nanocubes were closely monitored using various characterization techniques, which were then effectively utilized for photocatalytic degradation of important textile industry dyes, encompassing both cationic (MB, CV) and anionic (EBT) types. Optimal Al-doped SnO2 NC (6 wt%) demonstrated significant degradation efficiencies for organic pollutant and textile industry effluents under direct sunlight exposure. On the other hand, combination of optical and electrical properties was utilized in dye-sensitive solar cells (DSSCs) to achieve noteworthy efficiency of 6.33%, surpassing that of previous reported SnO2-based nanostructures. These exceptional performance nanomaterials can be attributed to the optimized morphology of the nanocubes and the reduction of the band gap from 3.24 eV to 2.75 eV facilitated by the introduction of aluminum dopant. Furthermore, synergic combination has also improved visible light excitation, substantially decreased resistance to charge carrier transfer phenomenon, improved the charge carrier concentration, as well as considerably decreased the electron/hole recombination rate. Therefore, presence of Al in SnO2 nanostructure has considerably improved the opto-electrical properties that were interpreted following theoretical studies. Therefore, study gives simple nanomaterials having both the photodegradation and dye-sensitive solar cell (DSSC) performance of the SnO2 nanostructure, as a cost-effective energy conversion and water pollution remediation tool for the near future.

Effect of Ni Doping on the Thermoelectric Properties of YbCo2Zn20.

Thermoelectric devices are both solid-state heat pumps and energy generators. Having a reversible process without moving parts is of high importance for applications in remote locations or under extreme conditions. Yet, most thermoelectric devices have a rather limited energy conversion efficiency due to the natural competition between high electrical conductivity and low thermal conductivity, both being essential conditions for achieving a high energy conversion efficiency. Heavy-fermion compounds YbT2Zn20 (T = Co, Rh, Ir) have been reported to be potential candidate materials for thermoelectric applications at low temperatures. Motivated by this result, we applied chemical substitution studies on the transition metal site in order to optimize the charge carrier concentration as well as promote more efficient phonon scatterings. Here, we present the latest investigation on the Ni-doped specimens YbCo2-xNixZn20, where enhanced thermoelectric figure of merit values have been obtained.

Study of the Gas Sensing Performance of Ni-Doped Perovskite-Structured LaFeO3 Nanospheres

This study synthesizes Ni-doped perovskite-structured LaFeO3 composite materials via a one-step hydrothermal method, characterizes the morphology and structure of the materials, and tests their gas sensing performance. The test results show that compared to pure LaFeO3 material, the gas sensing performance of Ni-doped LaFeO3 material is improved in all aspects. Specifically, LFO-Ni2% exhibits a response as high as 102 towards 100 ppm of triethylamine at 190 °C, along with better selectivity and stability. Furthermore, the gas sensing mechanism is investigated. On one hand, doping with an appropriate proportion of Ni can lead to the formation of more-complete and smaller-sized microsphere structures with pores. This is beneficial for the adsorption of oxygen from the air onto the material surface, as well as for the diffusion of the target gas to the surface of the material, thereby enhancing gas sensitivity performance. On the other hand, the doped Ni enters the interior of the LaFeO3 crystal, replacing some of the cations in LaFeO3, increasing the concentration of charge carriers in the material, and reducing the material’s resistance. The sample can adsorb more oxygen, promoting the reaction between adsorbed oxygen and the target gas, and thereby improving the gas sensitivity performance of the sample.

Charge Critical Phenomena in a Field Heterostructure with Two-Dimensional Crystal

The charge properties and regularities of mutual influence of the electro-physical parameters in a metal (M)/insulator (I)/two-dimensional crystal heterostructure were studied. In one case, the transition metal dichalcogenide (TMD) MoS2 was considered as a two-dimensional crystal, and in another the Weyl semi-metal (WSM) ZrTe5, representative of a quasi-two-dimensional crystal was chosen for this purpose. By self-consistently solving the electrostatic equations of the heterostructures under consideration and the Fermi–Dirac distribution, the relationship between such parameters as the concentration of charge carriers, chemical potential, and quantum capacitance of the TMD (WSM), as well as the capacitance of the I layer and the interface capacitance I–TMD (WSM), and their dependence on the field electrode potential, have been derived. The conditions for the emergence of charge instability and the critical phenomena caused by it are also determined.

Strong absorption of (Mn2O3)3CuSiO3 with Jahn–Teller elongation and direct photothermal storage of (Mn2O3)3CuSiO3–Mg(OH)2

To improve photon harvesting, we demonstrated that Jahn–Teller defects can efficiently reduce the band gap and increase the carrier density, which significantly intensify light harvesting and widen the absorption band. This may be an effective method for designing solar materials. The substitution of Mn2+ with Jahn–Teller active Cu2+ leads to quasi-metallic (Mn2O3)3CuSiO3 nanoparticles with a high concentration of charge carriers, displaying intense absorption in entire solar spectrum. Silicates may represent a new type of photon harvesting material. Mg(OH)2 powder coated by Cu-braunite shows a 150 % increase in photothermal temperature, a tenfold improvement in photothermal-dehydration conversion and a 15.8-fold increase in the reversibility of 30 cycles of heat storage and release. This material may be practicable for directly harvesting solar energy and storing thermoenergy. Jahn–Teller effects are effective for tuning photon harvesting.

Studies on chemically prepared Zn1-2xSnxVxO nanoparticles for supercapacitor application

The present study reports the preparation of Zn1–2xSnxVxO (0≤x≤0.10) nanoparticles synthesized by the co-precipitation method. Phase determination and structural properties are carried out using the X-ray diffraction technique. Young's modulus, bond length and bond angles are examined. The change in the crystallite size, texture coefficient and bond length indicates that the dopants Sn and V are successfully incorporated in the Zn lattice. The average crystallite size ranges from ∼32 – 19 nm for various doping concentrations of tin & vanadium. The texture coefficient increases due to the addition of the dopant. The band gap is 3.253 eV when x=0.00 and the same is 3.229 eV when x=0.10. Due to the addition of dopants, a red-shifted band gap is observed. The charge carrier concentration increases as the doping concentration of tin & vanadium increases and the prepared nanoparticles are p-type in nature. More vacancies and more defects are observed from the dielectric studies. The doping increases the specific capacitance and a maximum specific energy density of 11,372 J/kg is observed.

Characterization of Nanocrystalline SnS Thin Film Fabricated used PLD Method for Photodetection Applications

Pulsed laser deposition was used to create tin sulfide (SnS) nanoparticles with a Nd:YAG laser (700 mJ) with laser pulses of (200, 250, 300, and 350 pulses). Nanoparticles were created and investigated using XRD, AFM, and UV-Vis spectroscopy to understand their optical, topographical, and electrical properties. After that, a SnS photodetector was built for the first time, and its performance, photoresponse, and sensitivity were evaluated. The development of monocrystalline SnS films was confirmed by X-ray diffraction (XRD) examination. Clear crystallization with increased crystalline size and the optimum orientation was observed in the sample synthesized SnS thin film treated with 300 pulses. The crystallite size increased from 44 at 200 to 77 nm for 350 pulses. These films were characterized by better surface morphology with (111) preferred crystals. In addition, atomic force microscopy (AFM) studies showed that the average diameter of generated SnS nanoparticles rose from (39.4 nm to 64.7) nm when the laser pulses increased in pulsed laser deposition. Transmission measurements were used to determine the films' absorption coefficient energy gap (Eg), and they showed that the optical transition was direct and that the transmittance value dropped with increasing laser pulses. Band gap energy is reduced from 2.139 to 1.773 eV. Moreover, Hall Effect measurements on all samples demonstrate that all thin films were n-type, with charge carrier concentration increasing with increased pulses and carrier mobility decreasing with increased pulses. The photodetectors ' photosensitivity was evaluated in the dark after depositing Al contacts on SnS thin films through a metal mask. The Pulses of enhancement cause a red shift in the values of particular detectivity and quantum efficiency. The highest responsivity was obtained at 350 pulses, 6.72×10−1 AW−1. The high (QE) of 150% at 200 p and detectivity of 2.9×1011 cm, Hz1/2.W-1 at 300p.

Конструктивно-технологические особенности высокотемпературных интегральных микросхем

The problems of design and technological solutions for high-temperature analog microcircuits have been studied. Based on a review of publications devoted to the problems of designing high-temperature electronics products, it is shown that the most studied and used in mass production materials for the manufacture of crystals operating in the temperature range up to 300-350 ºС and in some cases up to 500 ºС are silicon carbide of the 4H-SiC and 6H-SiC. The use of gallium nitride GaN as a material for crystals makes it possible to expand the operating temperature range of semiconductor devices to 600 ºС. These materials have a large band gap, a high charge carrier saturation rate, and a low concentration of intrinsic charge carriers. One of the main factors limiting the growth rate of production of high-temperature electronics products is the complexity of packaging. It is shown that special attention of researchers is currently paid to the selection of case materials, materials for fastening crystals and materials of conductors connecting the contact pad of the crystals with the traverses of the case and coordinating the coefficient of thermal expansion of the crystal, the material for fastening the crystal and the housing seat on which the crystal is placed.

Modulation doping promoted ultrahigh electron mobility and enhanced thermoelectric performance in PbTe

Modulation doping was proven to be a quite effective strategy to realize high electrical conductivity at a relative low charge carrier concentration in bulk thermoelectric materials. In this work, we used lightly doped PbTe-0.1 %Cu with minimal ionized impurity scattering as matrix material and PbS-0.8 %Cu with adequate electron concentration as electron reservoir to construct a modulation doping scenario. Such modulation doped PbTe/PbS heterostructures were characterized with high-angle angular dark field scanning transmission electron microscopy (HAADF-STEM). We achieved significantly improved carrier mobility in modulation doped (PbTe)1-x(PbS)x than homogeneously doped PbTe materials reported in literatures; meanwhile, we also obtained obviously reduced lattice thermal conductivity owing to the strong phonon scattering by the dislocation arrays at PbTe/PbS phase boundaries. An ultrahigh room temperature (323 K) figure of merit ZTRT ∼0.63 as well as remarkable average ZTavg ∼1.17 at 323–773 K were simultaneously realized in the sample (0.1 %Cu-PbTe)0.9(0.8 %Cu-PbS)0.1, both of which are among the highest ones for all reported PbTe-based thermoelectric materials so far.